检索结果-南通市图书馆

Erratum to:Superlubricity of epitaxial monolayer WS_(2)on graphene

Nano Research 2024年第6期17卷 5754-5754页

作者： Holger Büch Antonio Rossi Stiven Forti Domenica Convertino Valentina Tozzini camilla coletti Center for Nanotechnology Innovation@NEST Istituto Italiano di TecnologiaPiazza S.Silvestro 1256127 PisaItaly NEST Istituto Nanoscienze–CNR and Scuola Normale SuperiorePiazza San Silvestro 1256127 PisaItaly Graphene Labs Istituto Italiano di TecnologiaVia Morego 3016163 GenovaItaly

The article"Superlubricity of epitaxial monolayer WS2 on graphene",written by Holger Büch,Antonio Rossi,Stiven Forti,Domenica Convertino,Valentina Tozzini,and camilla coletti,was originally published electronically on the publisher’s internet portal(currently SpringerLink)on June 18th 2018 without open access.With the author(s)’decision to opt for Open Choice the copyright of the article changed in August 2018 to©The Author(s)2018 and the article is forthwith distributed under the terms of the Creative Commons Attribution 4.0 International License(http://***/licenses/by/4.0/),which permits use,duplication,adaptation,distribution and reproduction in any medium or format,as long as you give appropriate credit to the original author(s)and the source,provide a link to the Creative Commons license and indicate if changes were made.

关键词： monolayer epitaxial license

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Superlubricity of epitaxial monolayer WS2 on graphene

引用

Nano Research 2018年第11期11卷 5946-5956页

作者： Holger Buch Antonio Rossi Stiven Forti Domenica Convertino Valentina Tozzini camilla coletti Center for Nanotechnology Innovation @NEST Istituto Italiano di Tecnologia Piazza S. Silvestro 12 56127 Pisa Italy NEST Istituto Nanoscienze - CNR and Scuola Normale Supefiore Piazza San Silvestro 12 56127 Pisa Italy Graphene Labs Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy

We report the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) grown on silicon carbide (SiC). Single-crystalline WS2 flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG. Microscopic and diffraction analyses indicate that the WS2/EG stack is predominantly aligned with zero azimuthal rotation. The present experiments show that, when perturbed by a scanning probe microscopy (SPM) tip, the WS2 flakes are prone to slide over the graphene surfaces at room temperature. Atomistic force field-based molecular dynamics simulations indicate that, through local physical deformation of the WS2 flake, the scanning tip releases enough energy to the flake to overcome the motion activation barrier and trigger an ultralow-friction rototranslational displacement, that is superlubric. Experimental observations show that, after sliding, the WS2 flakes come to rest with a rotation of nπ/3 with respect to graphene. Moreover, atomically resolved measurements show that the interface is atomically sharp and the WS2 lattice is strain-free. These results help to shed light on nanotribological phenomena in van der Waals (vdW) heterostacks, and suggest that the applicative potential of the WS2/graphene heterostructure can be extended by novel mechanical prospects.

关键词： superlubricity graphene tungsten disulfide scanning tunneling microscopy (STM) two-dimensional (2D) materials nanomechanical

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Low-temperature quantum transport in CVD-grown single crystal graphene

引用

Nano Research 2016年第6期9卷 1823-1830页

作者： Shaohua Xiang Vaidotas Miseikis Luca Planat Stefano Guiducci Stefano Roddaro camilla coletti Fabio Beltram Stefan Heun NEST Istituto Nanoscienze--CNR and Scuola Normale Superiore Piazza San Silvestro 12 $6127 Pisa Italy Center for Nanotechnology Innovation @NEST Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy

Chemical vapor deposition （CVD） is typically used for large-scale graphene synthesis for practical applications. However, the inferior electronic properties of CVD graphene are one of the key problems to be solved. Therefore, we present a detailed study on the electronic properties of high-quality single-crystal monolayer graphene. The graphene is grown via CVD on copper, by using a cold-wall reactor, and then transferred to Si/SiO2. Our low-temperature magneto-transport data demonstrate that the characteristics of the single-crystal CVD graphene samples are superior to those of polycrystalline graphene and have a quality which is comparable to that of exfoliated graphene on Si/SiO2. The Dirac point in our best samples occurs at back-gate voltages lower than 10 V, and a maximum mobility of 11,000 cm2/（V.s） is attained. More than 12 flat and discernible half-integer quantum Hall plateaus occur under a high magnetic field on both the electron and hole sides of the Dirac point. At a low magnetic field, the magnetoresistance exhibits a weak localization peak. Using the theory of McCann et al., we obtain inelastic scattering lengths of 〉1 um, even at the charge neutrality point of the samples.

关键词： high-quality chemicalvapor deposition （CVD）-graphene,low-temperaturemagnetotransport,quantum Hall effect,weak localization

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：