检索结果-南通市图书馆

High-performance self-powered ultraviolet photodetector in SnO_(2)microwire/p-GaN heterojunction using graphene as charge collection medium

在线全文

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2023年第7期138卷 183-192页

作者： Tong Xu Mingming Jiang Peng Wan Yang Liu caixia kan Daning Shi College of physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China

Graphene monolayer has been extensively applied as a transparency electrode material in photoelectronic devices due to its high transmittance,high carrier mobility,and ultrafast carrier dynamics.In this study,a high-performance self-powered photodetector,which is made of a SnO_(2)microwire,p-type GaN film,and monolayer graphene transparent electrode,was proposed and fabricated.The detector is sensitive to ultraviolet light signals and illustrates pronounced detection performances,including a peak respon-sivity∼223.7 mA W^(-1),a detectivity∼6.9×10^(12)Jones,fast response speed(rising/decaying times∼18/580μs),and excellent external quantum efficiency∼77%at 360 nm light illumination without exter-nal power supply.Compared with the pristine SnO_(2)/GaN photodetector using ITO electrode,the device performances of responsivity and detectivity are significantly increased over 6×10^(3)%and 3×10^(3)%,respectively.The performance-enhanced characteristics are mainly attributed to the high-quality het-erointerface of n-SnO_(2)/p-GaN,the highly conductive capacity,and the unique transparency of graphene electrodes.Particularly,the built-in potential formed at the SnO_(2)/GaN heterojunction interface could be strengthened by the Schottky potential barrier derived from the graphene electrode and SnO_(2)wire,en-hancing the carrier collection efficiency through graphene as a charge collection medium.This work is of great importance and significance to developing excellent-performance ultraviolet photodetectors for photovoltaic and optoelectronic applications in a self-powered operation manner.

关键词： Self-powered photodetector SnO_(2)microwires Monolayer graphene electrode Heterojunction Schottky barrier

Electrically driven single microwire-based single-mode microlaser

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Light(Science & Applications) 2022年第8期11卷 1799-1810页

作者： Xiangbo Zhou Mingming Jiang Kai Xu Maosheng Liu Shulin Sha Shuiyan Cao caixia kan Da Ning Shi College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNo.29 Jiangjun RoadNanjing211106China

Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.

关键词： mode lasing cavity

High-mobility induced high-performance self-powered ultraviolet photodetector based on single ZnO microwire/PEDOT:PSS heterojunction via slight ga-doping

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2021年第34期93卷 33-40页

作者： Peng Wan Mingming Jiang Tong Xu Yang Liu caixia kan College of Science MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNo.29 Jiangjun RoadNanjing 211106P.R.China

Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricating ultraviolet photodetectors(PDs)due to their proper bandgap,unique optoelectronic properties,large surface-to-volume ratio and good integration.However,semiconducting micro/nanostructures suffer from low electron conductivity and abundant surface defects,which greatly limits their practical application in developing PDs.In this work,an ultraviolet PD consisting of single Ga-doped ZnO microwire(ZnO:Ga MW)and p-type poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)was designed.When exposed to ultraviolet illumination,the PD exhibits excellent performance(responsivity~185 m A/W,detectivity~2.4×10^(11) Jones,and fast response speed of~212μs for rise time and~387μs for decay time)under self-driven conditions.Compared with that of an undoped Zn O MWbased PD,the responsivity and detectivity of ZnO:Ga MW/PEDOT:PSS PD are significantly enhanced over 400%and 600%,respectively.Due to the incorporation of Ga element,the charge transport properties of a ZnO:Ga MW,specifically for the mobility,are effectively enhanced,which can substantially facilitate the generation,separation,transport and harvest efficiency of photo-generated carriers in the asfabricated PD.Besides,the Ga-incorporation improves the crystalline quality of MWs and reduces surface state density,further suggesting a high-quality ZnO:Ga MW/PEDOT:PSS heterojunction.This work provides a potential approach for designing high-performance self-powered ultraviolet PDs from the aspect of enhancing carrier transport through fine doping.

关键词： UV Photodetectors Self-powered Mobility High performance Microwire

Alloyed Au-Ag nanorods with desired plasmonic properties and stability in harsh environments

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2019年第5期7卷 558-565页

作者： Yuan Ni caixia kan Longbing He Xingzhong Zhu Mingming Jiang Daning Shi College of Science Nanjing University of Aeronautics and Astronautics Nanjing 210016 China Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education Nanjing 210016 China SEU-FEI Nano-Pico Center Key Laboratory of MEMS of the Ministry of Education Southeast University Nanjing 210096 China Southeast University-Monash University Joint Research Institute Suzhou 215123 China

Bio-chemical molecular detection in the nanoscale, based on alloyed nanorods(NRs) with tunable surface plasmon resonance(SPR) properties and high chemical stability, has attracted particular interest. In this work,alloyed Au-Ag NRs with tunable aspect ratios were achieved by annealing Au nanobipyramid-directed Au@Ag core-shell NRs. The core-shell NRs were encapsulated within mesoporous silica outer shells to avoid fusion or aggregation. The structural stability of fully alloyed Au-Ag NRs, including chemical and thermal stability, is remarkably improved compared with that of Au@Ag core-shell NRs. The alloyed NRs would maintain the rod-like structure after being incubated in etchant solution, while Au@Ag core-shell NRs would decay into nanobipyramids.Additionally, fully alloyed NRs present stable morphology under annealing at high temperatures of up to 600℃ in air. Benefiting from excellent structural and chemical stabilities, the surface-enhanced Raman scattering effect based on alloyed NRs is stable in harsh environments. Taking advantage of tunable SPR properties(600–1800 nm) and excellent stability, the obtained nanostructures can serve as drug carriers. The perfect photo-thermal effect induced by the particular SPR of alloyed NRs can improve the release efficiency of drugs.

关键词： plasmonic properties stability harsh environments

Bifunctional ultraviolet light-emitting/detecting device based on a SnO_(2) microwire/p-GaN heterojunction

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2021年第12期9卷 2475-2485页

作者： TONG XU MINGMING JIANG PENG WAN KAI TANG DANING SHI caixia kan College of Science MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China

SnO_(2)has attracted considerable attention due to its wide bandgap,large exciton binding energy,and outstanding electrical and optoelectronic features.Owing to the lack of reliable and reproducible p-type SnO_(2),many challenges on developing SnO_(2)-based optoelectronic devices and their practical applications still remain.Herein,single-crystal SnO_(2)microwires(MWs)are acquired via the self-catalyzed approach.As a strategic alternative,n-SnO_(2)MW/p-GaN heterojunction was constructed,which exhibited selectable dual-functionalities of light-emitting and photodetection when operated by applying an appropriate voltage.The device illustrated a distinct near-ultraviolet light-emission peaking at∼395.0 nm and a linewidth∼50 nm.Significantly,the device characteristics,in terms of the main peak positions and linewidth,are nearly invariant as functions of various injection current,suggesting that quantum-confined Stark effect is essentially absent.Meanwhile,the identical n-SnO_(2)MW/p-GaN heterojunction can also achieve photovoltaic-type light detection.The device can steadily feature ultraviolet photodetecting ability,including the ultraviolet/visible rejection ratio(R_(360 nm)/R_(400 nm))∼1.5×10^(3),high photodark current ratio of 105,fast response speed of 9.2/51 ms,maximum responsivity of 1.5 A/W,and detectivity of 1.3×10^(13)Jones under 360 nm light at−3 V bias.Therefore,the bifunctional device not only displays distinct near-ultraviolet light emission,but also has the ability of high-sensitive ultraviolet photodetection.The novel design of n-SnO_(2)MW/p-GaN heterojunction bifunctional systems is expected to open doors to practical application of SnO_(2)microstructures/nanostructures for large-scale device miniaturization,integration and multifunction in next-generation high-performance photoelectronic devices.

关键词： heterojunction optoelectronic ultraviolet

Effective fabrication of porous Au-Ag alloy nanorods for in situ Raman monitoring catalytic oxidation and reduction reactions

在线全文

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2021年第32期91卷 262-269页

作者： Shanlin Ke caixia kan Xingzhong Zhu Changshun Wang Weijian Gao Zhaosheng Li Xiaoguang Zhu Daning Shi College of Science Nanjing University of Aeronautics and AstronauticsNanjing 210016China Key Laboratory of Aerospace Information Materials and Physics Ministry of Industry and Information TechnologyNanjing 210016China National Laboratory of Solid State Microstructures Nanjing UniversityNanjing 210093China Institute of Solid State Physics Chinese Academy of SciencesHefei 230031China Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education Nanjing 210016China

Porous metal nanostructures exhibit excellent catalytic properties due to their high surface-to-volume ratios and abundant catalytic active sites. However, it is still challenging to control nanopores density and structural features in a facile route and the preparation of porous alloy nanorods for catalytic application has not been well explored. In this work, we demonstrate a synthetic strategy to fabricate highly porous Au–Ag alloy nanorods(P-Au Ag NRs) by critically dealloying Ag atoms from homogeneous solid Au–Ag alloy nanorods(Au Ag NRs). Combining the merits of the tunable plasmonic properties of noble metal nanorods, excellent stabilities of alloys, and superior catalytic activities of porous structures, we use the P-Au Ag NRs as a Raman probe for the in situ monitoring of the catalytic oxidation of 3,3',5,5' tetramethylbenzidine(TMB) and reduction of 4-nitrothiophenol(4-NTP). We also compare their compositiondependent catalytic activities. The results show that P-Au Ag NRs possess superior chemical stability and higher catalytic activity than those of core-shell structures due to synergistic structural and chemical mechanisms. This strategy provides a predictive design approach for the next-generation alloy catalysts with high-performance.

关键词： Catalysis Porous Au-Ag alloy nanorod High-index facets Raman monitoring Oxidation and reduction

Synthesis of high-purity silver nanorods with tunable plasmonic properties and sensor behavior

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2017年第1期5卷 27-32页

作者： Haiying Xu caixia kan Changzong Miao Changshun Wang Jingjing Wei Yuan Ni Beibei Lu Daning Shi College of Science Nanjing University of Aeronautics and Astronautics Department of Mathematics and Physics Nanjing Institute of Technology

Through anisotropic Ag overgrowth on the surface of Au nanobipyramids(Au NBPs), high-purity and sizecontrolled Ag nanorods(Au/Ag NRs) are obtained by a simplified purification process. The diameters of the Au/Ag NRs are determined by the size of the as-prepared Au NBPs, and the lengths of the Au/Ag NRs are tunable using different amounts of Ag precursor in the growth solution. Surface-enhanced Raman scattering(SERS) studies using Rhodamine-6G(R6G) as a test molecule indicate that the Au/Ag NRs have excellent sensing potential. The tunable optical properties and strong electromagnetic effect of the Au/Ag NRs, along with their superior SERS signal enhancement, show that Au/Ag NRs are promising for further applications in plasmon sensing and biomolecular detection.

关键词： NBP Ag Synthesis of high-purity silver nanorods with tunable plasmonic properties and sensor behavior high

界面工程与等离激元效应协同作用增强的ZnO微米线同质结自驱动紫外探测器

在线全文

学校读者我要写书评

暂无评论

Science China Materials 2024年第3期67卷 842-851页

作者：唐楷沙树林万鹏翟亚林阚彩侠施大宁姜明明 College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China

高灵敏度的自驱动紫外探测器在许多应用中都大有可为.本研究提出了一种一维ZnO基同结光电探测器,它包括表面覆盖着Ag纳米线的锑掺杂ZnO微米线(AgNWs@ZnO:Sb MW)、MgO缓冲纳米层和ZnO薄膜.该探测器在0 V偏压下对紫外光非常敏感,其性能参... 详细信息

高灵敏度的自驱动紫外探测器在许多应用中都大有可为.本研究提出了一种一维ZnO基同结光电探测器,它包括表面覆盖着Ag纳米线的锑掺杂ZnO微米线(AgNWs@ZnO:Sb MW)、MgO缓冲纳米层和ZnO薄膜.该探测器在0 V偏压下对紫外光非常敏感,其性能参数包括约7个量级的开关比、292.2 mA W^(-1)的响应度、6.9×10^(13)Jones的比探测率,以及微秒量级的快速响应速度(上升时间16.4μs,下降时间465.1μs).特别是10μW cm^(-2)的微弱紫外光时接近99.3%的外量子效率.此外,本文系统研究了MgO纳米薄膜和表面修饰AgNWs对探测器件性能增强的机理.作为自驱动光接收器,该光电二极管被进一步集成到能够实时传输信息的紫外通信系统中.此外,基于AgNWs@p-ZnO:Sb MW/i-MgO/n-ZnO的同质结9×9阵列显示出均匀的光响应分布,可用作具有良好空间分辨率的成像传感器.这项研究有望为设计高性能紫外光检测器提供一条具有低功耗和可大规模建造的途径.

关键词： interface engineering p-type ZnO:Sb microwire selfpowered photodetector imaging sensor UV optical communication plasmonic effect

Nonequilibrium hot-electron-induced wavelength-tunable incandescent-type light sources

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2020年第1期8卷 91-102页

作者： ZHIPENG SUN MINGMING JIANG WANGQI MAO caixia kan CHONGXIN SHAN DEZHEN SHEN State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China University of Chinese Academy of Sciences Beijing 100049China College of Science Nanjing University of Aeronautics and AstronauticsNanjing 210016China School of Physics and Engineenng Zhengzhou University.Zhengzhou 450052China

The collective oscillation of electrons located in the conduction band of metal nanostructures being still energized,with the energy up to the bulk plasmon frequency,are called nonequilibrium hot electrons.It can lead to the state-filling effect in the energy band of the neighboring semiconductor.Here,we report on the incandescent-type light source composed of Au nano rods decorated with single Ga-doped ZnO microwire(AuNRs@ZnO:Ga MW).Benefiting from Au nanorods with controlled aspect ratio,wavelength-tunable incandescent-type lighting was achieved,with the dominating emission peaks tuning from visible to near-infrared spectral regions.The intrinsic mechanism was found that tunable nonequilibrium distribution of hot electrons in ZnO:Ga MW,injected from Au nanorods,can be responsible for the tuning emission features.Apart from the modification over the composition,bandgap engineering,doping level,etc.,the realization of electrically driving the generation and injection of nonequilibrium hot electrons from single ZnO:Ga MW with Au nanostructure coating may provide a promising platform to construct electronics and optoelectronics devices,such as electric spasers and hot-carrier-induced tunneling diodes.

关键词： nonequilibrium collective light