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Investigation of Absorption of Nanocrystalline Silicon

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Chinese Physics Letters 1999年第11期16卷 833-835页

作者： MA Zhi-xun LIAO Xian-bo KONG Guang-lin chu jun-hao State Key Laboratory for Surface Physics Institute of SemiconductorsCenter for Condensed Matter PhysicsChinese Academy of SciencesBeijing 100083 National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083

Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiOx films fabricated by plasma enhanced chemical vapor deposition technique. In conjunction with the micro-Raman spectra, the absorption spectra of the films have been investigated. The blue-shift of absorption edge with decreasing size of silicon crystallites is due to quantum confinement effect. It is found that nanocrystalline silicon is of an indirect band structure, and that the absorption presents an exponential dependence of absorption coefficient on photon energy in the range of 2.0-3.0eV, and a sub-band appears in the range of 1.0-1.5eV. We believe that the exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between the amorphous silicon states existing in the films.

关键词： technique. absorption exponential

The determination of the x value in doped Hg_(1-x)Cd_x Te by transmission spectra

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Chinese Physics B 2012年第1期21卷 488-492页

作者： Yue Fang-Yu Chen Lu Li Ya-Wei Sun Lin Yang Ping-Xiong chu jun-hao Key Laboratory of Polar Materials and Devices Ministry of EducationEast China Normal UniversityShanghai 200241China Research Center for Advanced Materials and Devices Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Variable-temperature transmission/absorption spectra are measured on As-doped Hgl-xCdxTe grown by molec- ular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on VHg （unintentionally）-doped HgCdTe. By referring to the empirical formulas of Eg（x,T）, the x value of the epilayer is calculated and its inconsistency between the extreme temperatures （e.g. 10 and 300 K） is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value （or Eg） in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible （e.g. 10 K）, and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.

关键词： intrinsic/extrinsic-doped HgCdTe bandedge parameters transmission spectra

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铜铟镓硒薄膜太阳电池研究进展和挑战

红外与毫米波学报 2022年第2期41卷 395-412页

作者：陶加华褚君浩华东师范大学纳光电集成与先进装备教育部工程研究中心极化材料与器件教育部重点实验室上海200241 中国科学院上海技术物理研究所红外物理国家重点实验室上海200083

铜铟镓硒(Cu(In,Ga)Se_(2),CIGS)太阳电池产业化受到全世界广泛关注。作为高转换效率薄膜电池,其效率可与晶硅电池相比,目前最高效率达到23.35%。对于小面积实验室电池而言,研究重点是精确控制吸收层的化学计量比和效率;对于工业化生产... 详细信息

铜铟镓硒(Cu(In,Ga)Se_(2),CIGS)太阳电池产业化受到全世界广泛关注。作为高转换效率薄膜电池,其效率可与晶硅电池相比,目前最高效率达到23.35%。对于小面积实验室电池而言,研究重点是精确控制吸收层的化学计量比和效率;对于工业化生产而言,除化学计量比和效率外,成本、重现性、产出和工艺兼容性在商业化生产中至关重要。重点介绍了不同制备工艺、吸收层组分梯度调控、碱金属后沉积处理、宽带隙无镉缓冲层、透明导电层和柔性衬底等研究进展。从CIGS电池的效率来看,将实验室创纪录的高效电池技术转移到平均工业生产水平带来显而易见的挑战。

关键词：铜铟镓硒(Cu(In Ga)Se CIGS)太阳电池组分梯度碱金属无镉缓冲层产业化叠层

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铁电薄膜非制冷红外探测器的技术发展

红外与激光工程 2008年第1期37卷 9-13页

作者：褚君浩中国科学院上海技术物理研究所红外物理国家重点实验室

介绍了课题组在铁电薄膜的制备、特性研究以及非制冷红外探测技术方面的研究结果。研究获得了几种控制铁电薄膜微结构(如晶粒尺寸、晶粒形状、Ba1-xSrxTiO3(BST)和PbZrxTi1-xO3(PZT)铁电薄膜的择优取向生长等)的新技术;研制出具有高度... 详细信息

介绍了课题组在铁电薄膜的制备、特性研究以及非制冷红外探测技术方面的研究结果。研究获得了几种控制铁电薄膜微结构(如晶粒尺寸、晶粒形状、Ba1-xSrxTiO3(BST)和PbZrxTi1-xO3(PZT)铁电薄膜的择优取向生长等)的新技术;研制出具有高度自极化特性的0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3(PMNT)弛豫铁电薄膜;探索了一种具有将红外转化为可见光机制的新型光读出方式;发明了PZT薄膜的低温(400°C)生长方法。此外,还介绍了256×1线列铁电薄膜非制冷红外探测器的研制及部分成像结果。

关键词：铁电薄膜微结构控制非制冷红外探测

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窄禁带半导体的光电跃迁效应

激光与红外 2006年第B09期36卷 759-765页

作者：褚君浩中国科学院上海技术物理研究所红外物理国家重点实验室

光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。文中阐述了带间光吸收效应的基本规律的发现及其科学意义,介绍了这些规律在碲镉汞红外探测器材料器件设计中的应用... 详细信息

光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。文中阐述了带间光吸收效应的基本规律的发现及其科学意义,介绍了这些规律在碲镉汞红外探测器材料器件设计中的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用。

关键词：光电跃迁窄禁带半导体碲镉汞红外探测器

Oscillations of Low-Field Magnetoresistivity of Two-Dimensional Electron Gases in Al_(0.22)Ga_(0.78)N/GaN Heterostructures in a Weak Localization Region

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Chinese Physics Letters 2011年第8期28卷 262-265页

作者： HAN Kui TANG Ning DUAN jun-Xi LU Fang-Chao LIU Yu-Chi SHEN Bo ZHOU Wen-Zheng LIN Tie SUN Lei YU Guo-Lin chu jun-hao State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871 National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083

Low-field magnetotransport properties of two-dimensional electron gases(2DEGs)are investigated in Al_(0.22)Ga_(0.78)N/GaN *** means of a tilting magnetic field,unexpected oscillations of magnetoresistivity are observed in a weak localization *** understanding based on Altshuler–Aronov–Spivak oscillations is proposed for the case of interface disorder in Al_(0.22)Ga_(0.78)N/GaN heterostructures.

关键词： N/Ga resistivity Electron

Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Al_(x)Ga_(l-x)N/GaN Heterostructures

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Chinese Physics Letters 2001年第12期18卷 1641-1643页

作者： ZHENG Ze-Wei SHEN Bo JIANG chun-Ping ZHANG Rong SHI Yi ZHENG You-Dou ZHENG Guo-Zhen GUO Shao-Ling chu jun-hao National Laboratory of Solid State Microstructures and Department of Physics Nanjing UniversityNanjing 210093 National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083

In the magnetotransport measurements of the two-dimensional electron gas (2DEG) in modulation-doped Al_(0.22)Ga_(0.7)sN/C heterostructures, a new magnetoresistance oscillation of the 2DEG is observed at low magnetic fields when the Al_(0.22)Ga_(0.7)sN layer on GaN is partially relaxed. It is thought that the misfit dislocations induced by the partially relaxed Al_(0.22)Ga_(0.7)sN layer modulate the distribution of the piezoelectric polarization-induced charges at the Al0.22Ga0.7sN/GaN heterointerface, and thus produce a strong modulation potential at the heterointerface. The strong modulation potential results in the novel magnetoresistance oscillation of the 2DEG at low magnetic fields.

关键词： N/Ga polarization relaxed

半导体物理效应及其应用讲座第四讲光吸收跃迁效应与半导体红外探测器的应用发展

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物理 2005年第11期34卷 840-847页

作者：褚君浩中国科学院上海技术物理研究所红外物理国家重点实验室上海200083

光吸收跃迁效应是半导体光电探测器的基本物理过程.文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展.讨论窄禁带半导体带间光吸收跃迁的理论和实验.文章还介绍了本征光吸收系数的表达式及其在材料表征和确定器... 详细信息

光吸收跃迁效应是半导体光电探测器的基本物理过程.文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展.讨论窄禁带半导体带间光吸收跃迁的理论和实验.文章还介绍了本征光吸收系数的表达式及其在材料表征和确定器件截止波长方面的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用.

关键词：光吸收光跃迁半导体光电子探测器

A novel self-alignment method for high precision silicon diffraction microlens arrays preparation and its integration with infrared focal plane arrays

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红外与毫米波学报 2024年第5期43卷 589-594页

作者： HOU Zhi-Jin CHEN Yan WANG Xu-Dong WANG Jian-Lu chu jun-hao State Key Laboratory of Photovoltaic Science and Technology Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai 200433China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their *** errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving *** has a serious impact on its performance and subsequent *** response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is *** accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment *** the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective *** unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of *** high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the *** results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.

关键词： self-alignment diffraction microlens arrays high precision integration Si IRFPAs