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Temperature-sensing array using the metal-to-insulator transition of Nd_(x)Sm_(1-x)NiO_(3)

International Journal of Minerals,Metallurgy and Materials 2024年第7期31卷 1694-1700页

作者： Fengbo Yan Ziang Li Hao Zhang Yuchen Cui Kaiqi Nie nuofu chen Jikun chen School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China School of Renewable Energy North China Electric Power UniversityBeijing 102206China Beijing Synchrotron Radiation Facility Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China

Rare-earth nickelates(RENiO_(3))show widely tunable metal-to-insulator transition(MIT)properties with ignorable variations in lattice constants and small latent heat across the critical temperature(TMIT).Particularly,it is worth noting that compared with the more commonly investigated vanadium oxides,the MIT of RENiO_(3)is less abrupt but usually across a wider range of *** sheds light on their alternative applications as negative temperature coefficient resistance(NTCR)thermistors with high sensitivity compared with the current NTCR thermistors,other than their expected use as critical temperature resistance *** this work,we demonstrate the NTCR thermistor functionality for using the adjustable MIT of Nd_(x)Sm_(1-x)NiO_(3)within 200–400 K,which displays larger magnitudes of NTCR(e.g.,more than 7%/K)that is unattainable in traditional NTCR thermistor *** temperature dependence of resistance(R–T)shows sharp variation during the MIT of Nd_(x)Sm_(1-x)NiO_(3)with no hysteresis via decreasing the Nd content(e.g.,x≤0.8),and such a R–T tendency can be linearized by introducing an optimum parallel *** sensitive range of temperature can be further extended to 210–360 K by combining a series of Nd_(x)Sm_(1-x)NiO_(3)with eight rare-earth co-occupation ratios as an array,with a high magnitude of NTCR(e.g.,7%–14%/K)covering the entire range of temperatures.

关键词： rare-earth nickelates metal-to-insulator transition correlated oxides perovskites

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Progress in Research on Materials Under Microgravity in China

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空间科学学报 2004年第Z1期24卷 138-149页

作者： chen nuofu chen Wanchun LUO Xinghong YE Yude Key Laboratory of Semiconductor Materials Sciences Institute of Semiconductors The Chinese Academy of Sciences Beijing 100083 China National Laboratory of Microgravity Institute of Mechanics The Chinese Academy of Sciences Beijing 100080 China Institute of Physics The Chinese Academy of Sciences Beijing 100080 China National Laboratory of Microgravity Institute of Mechanics The Chinese Academy of Sciences Beijing 100080 China Institute of Metal Research The Chinese Academy of Sciences Shenyang 110016 China Key Laboratory of Semiconductor Materials Sciences Institute of Semiconductors The Chinese Academy of Sciences Beijing 100083 China

Research on materials under microgravity in China began in the 1980s, sparked by Prof. Lanying Lin (academician of CAS), Prof. Xiji Wang (academician of CAS), Prof. Guirong Min (academician of CAS), and Prof. Huabao Lin (academician of CAS), and others. The first semiconductor crystal, first optical crystal, and first alloys were grown in space on board a recoverable satellite in 1987. Since then, microgravity materials science became a new scientific branch in *** and technical activities on space crystal growth and solidification are carried out through two major programs: ground-based studies and orbital experiments. The main results obtained during 2001-2003 are reported below.

关键词： Microgravity, Semiconductor, Metal, Crystal

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Electronic and magnetic stability in correlated transportations of rare-earth nickelate perovskites

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Journal of Rare Earths 2021年第2期39卷 174-179页

作者： Jinhao chen Jikun chen Zengyao Ren Dandan Zhao Mengxi Wang Jun Miao Xiaoguang Xu Yong Jiang nuofu chen School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China School of Renewable Energy North China Electric Power UniversityBeijing 102206China

Although the thermistor and metal to insulator transition bi-functionalities were discovered for rareearth nickelates(RENiO3),the electronic stability in their correlated transports under impulse voltage or magnetic field remain as open ***,we demonstrate the thermistor transportations of the electron correlated rare-earth nickelates under impulse direct current voltage and in magnetic *** insulating phase of RENiO3 shows zero crossing linear I-V characters,indicating their stable electronic resistance is independent of the imparted voltage up to 10 V and pulse width down to1 us,in spite of their sensitive electronic structures to *** addition,the high electronic stability associated with the thermistor transportation of RENiO3 is also demonstrated in magnetic fields up to 9 T(i.e.,MR<0.2%).The high electronic stability further paves the way to applying RENiO3 as a broad temperature range thermistor in temperature sensing or circuit protections for correlated electronics.

关键词： Rare-earth nickelates Correlated semiconductors Thermistor Metal to insulator transitions

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Metal-organic decomposition growth of thin film metastable perovskite nickelates with kinetically improved quantum transitions

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International Journal of Minerals,Metallurgy and Materials 2023年第12期30卷 2441-2450页

作者： Haiyan Li Yuzhao Wang Fanqi Meng Wei Mao Xingzhong Cao Yi Bian Hao Zhang Yong Jiang nuofu chen Jikun chen Beijing Advanced Innovation Center for Materials Genome Engineering School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China School of Renewable Energy North China Electric Power UniversityBeijing 102206China School of Materials Science and Engineering Peking UniversityBeijing 100871China School of Engineering The University of Tokyo2-11-16 YayoiBunkyo-kuTokyo 113-0032Japan Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China

The multiple quantum transitions within d-band correlation oxides such as rare-earth nickelates(RENiO_(3))triggered by critical temperatures and/or hydrogenation opened up a new paradigm for correlated electronics applications,*** electric field sensor,bio-sensor,and neuron synapse logical ***,these applications are obstructed by the present ineffectiveness in the thin film growth of the metastable RENiO_(3)with flexibly adjustable rare-earth compositions and electronic ***,we demonstrate a metal-organic decompositions(MOD)approach that can effectively grow metastable RENiO_(3)covering a large variety of the rare-earth composition without introducing any vacuum *** the previous chemical growths for RENiO_(3)relying on strict interfacial coherency that limit the film thickness,the MOD growth using reactive isooctanoate percussors is tolerant to lattice defects and therefore achieves comparable film thickness to vacuum *** indicated by positron annihilation spectroscopy,the RENiO_(3)grown by MOD exhibit large amount of lattice defects that improves their hydrogen incorporation amount and electron transfers,as demonstrated by the resonant nuclear reaction analysis and near edge X-ray absorption fine structure *** effectively enlarges the magnitude in the resistance regulations in particular for RENiO_(3)with lighter RE,shedding a light on the extrinsic regulation of the hydrogen induced quantum transitions for correlated oxides semiconductors kinetically via defect engineering.

关键词： metal-insulator transition rare earth nickelates lattice defects hydrogen incorporation metal-organic decomposition

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Frequency regulation in alternation-current transports across metal to insulator transitions of thin film correlated perovskite nickelates

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Journal of Materials Science & Technology 2023年第17期148卷 235-241页

作者： Haifan Li Fanqi Meng Yi Bian Xuanchi Zhou Jiaou Wang Xiaoguang Xu Yong Jiang nuofu chen Jikun chen School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China School of Materials Science and Engineering Tsinghua UniversityBeijing 100084China Beijing Synchrotron Radiation Facility Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China School of Renewable Energy North China Electric Power UniversityBeijing 102206China

Although the metal to insulator transition(MIT)observed in d-band correlated metal oxides enables promising applications(e.g.,correlated logical devices and Mottronic devices),its present recognition is mainly limited on the direct current(DC)electrical *** to date,the MIT from the perspective of alternation current(AC)transport and its potential electronic applications remains yet ***,we demonstrate the frequency(f_(AC))dependence in the impedance(Z=Z’+iZ″)of typical MIT materials,such as thin film rare-earth nickelates(Re NiO_(3)),across the critical MIT temperature(T_(MIT)).Apart from the abrupt change in the impedance modulus(|Z|)across the critical temperature(T_(MIT))similar to the DC transport,the MIT also triggers non-continuous variation in the impedance phase(θ),and this enables the f_(AC)-regulations in the Z’-T tendencies(Z’=|Z|cosθ).At the critical f_(AC) range(e.g.,104-106 Hz),the con-versing variations in|Z|-T and cosθ-T across T_(MIT) result in non-monotonic delta-shape Z’-T tendency in Sm_(x) Nd_(1-x) NiO_(3),the full width half maximum of which is effectively narrowed compared to the situation with the absence of *** imparting lower or higher f_(AC) elevate the domination in|Z|-T and cosθ-T,respectively,but also enables abrupt Z’-T tendencies across T_(MIT) showing negative temperature coefficient of resistance(NTCR)or positive temperature coefficient of resistance(PTCR).By introducing f_(AC) as a new freedom,the MIT behavior can be more comprehensively regulated electronically,and this extends the vision in exploring the new electronic applications based on the correlated MIT materials from the AC perspective.

关键词： Metal to insulator transition Rare earth nickelates Electrical transportations Impedance Perovskite oxide Electronic correlation

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Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell

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Journal of Semiconductors 2012年第2期33卷 54-57页

作者： Cui Min chen nuofu Yang Xiaoli Zhang Han School of Applied Physics and Mathematics Beijing University of TechnologyBeijing 100124China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China New and Renewable Energy of Beijing Key Laboratory North China Electric Power UniversityBeijing 102206China

GalnP/GaAs/Ge tandem solar cells were fabricated by a MOCVD *** photoelectric properties of the solar cells were characterized by a current-voltage test *** dependence of the solar cell’s characteristics on temperature were investigated from 30 to 170°C at intervals of 20°*** results indicated that with increasing temperature,JSC of the cell increased slightly with a temperature coefficient of 9.8（μA/cm2）/°*** reduced sharply with a coefficient of-5.6 mV/°*** was reduced with a temperature coefficient of—0.00063/℃. Furthermore,the conversion efficiency decreased linearly with increasing temperature which decreased from 28% at 30℃to 22.1%at 130°***,detailed theoretical analyses for temperature characteristics of the solar cell were given.

关键词： GaInP/GaAs/Ge tandem solar cells temperature dependence solar energy

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Temperature dependent spectral response characteristic of Ⅲ-Ⅴ compound tandem cell

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Chinese Science Bulletin 2009年第3期54卷 353-357页

作者： LIU Lei chen nuofu WANG Yu BAI YiMing CUI Min GAO FuBao Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences POB 912 Beijing 100083. China

The GaInP/GaAs/Ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Temperature dependence of the spectral response measurements of the GaInP/GaAs/Ge tandem cell was performed by a quantum effi- ciency system at temperatures ranging from 25℃ to 160℃. The red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap nar-rowing with temperature. The short-circuit current densities (Jsc) of GaInP, GaAs and Ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 mA/cm2, re- spectively. The temperature coefficient of Jsc for the tandem cell was determined to be 8.9 μA/(cm2·℃), and the corresponding temperature coefficient of the open-circuit voltage deduced from the se- ries-connected model was -6.27 mV/℃.

关键词：串行细胞光谱响应温度系数化学沉积作用

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The PL "violet shift" of cerium dioxide on silicon

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Chinese Science Bulletin 2001年第24期46卷 2046-2048页

作者： Chai Chunlin Yang Shaoyan Liu Zhikai Liao Meiyong chen nuofu Wang Zhanguo Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied from tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of 'violet shift' was observed.

关键词： cerium dioxide thin film PL violet shift.

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Content analyses in GaMnAs by double-crystal X-ray diffraction

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Chinese Science Bulletin 2002年第4期47卷 274-275页

作者： chen nuofu XIU Huixin YANG Junling WU Jinling ZHONG Xingru LIN Lanying Laboratory of Semiconductor Materials Science Institute of SemiconductorChinese Academy of SciencesBeijing 100083China National Microgravity Laboratory of Chinese Academy of Sciences Beijing 100080China

A model for analyzing point defects in com-pound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was estab-lished. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.

关键词： GaMnAs diluted magnetic semiconductor X-ray diffraction lattice parameter content of Mn.

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Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

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Chinese Science Bulletin 2002年第21期47卷 1780-1782页

作者： ZHANG Xiulan ZHANG Fuqiang SONG Shulin chen nuofu WANG Zhanguo LIN Lanying Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China National Microgravity Laboratory of Chinese Academy of Sciences Institute of MechanicsBeijing 100080China

Depth profiles of carrier concentrations in Ga-MnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

关键词： electrochemistry C-V magnetic semiconductor GaMnSb.

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