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Violet/blue photoluminescence from CeO_2 thin film

chinese science Bulletin 2003年第2期48卷 1198-1200页

作者： chai chunlin, yang shaoyan, liu zhikai, liao meiyong & chen nuofu key laboratory of semiconductor material science, institute of semi-conductors, chinese academy of sciences, beijing 100083, china key laboratory of semiconductor material science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thinfilm. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to theelectrons transition from Ce4f band to O2p band and thedefect level to O2p band. And these defects levels were lo-cated in the range of 1 eV around Ce4f band.

关键词： cerium dioxide thin film PL violet/blue.

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Two-dimensional materials for future information technology: status and prospects

引用

science china(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO yang chai Shula chen Yiqi chen Hui-Ming chenG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei liao Bilu liu Can liu Chunsen liu Guanyu liu Kaihui liu Liwei liu Sheng liu Yuan liu Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit science and Engineering Nanjing University of Posts and Telecommunications State key laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and key Lab of Quantum materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory State key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic materials and Devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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