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Journal of Materials Science & technology 2021年第31期90卷 85-94页

作者： Youfang cao Longtao Jiang Deng Gong Guoqin Chen Ziyang Xiu Yangming Cheng Xiufang Wang Gaohui Wua School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China state key {2. of Advanced Welding Production technology Harbin Institute of TechnologyHarbin 150001China shanghai Institute of microsystem and {2. technology Chinese Academy of SciencesShanghai 200050China

In this paper,we were devoted to quantitatively analyzing the dimensional change of 2.2. Al alloy during the aging *** of precipitates have been defined and the corresponding volume fraction has been measured with Transmission Electron Microscopy(TEM)and Three-Dimensional Atom Probe Tomography(3 D-APT).Guinier-Preston-Bagaryatsky(GPB)zone(0.86 vol.%)was found after aging for 8 *** zone(0.17 vol.%)and S'phase(1.02.vol.%)was found after aging for 2. *** reduced dimensional change was attributed to the reduction of matrix lattice *** to the initial supersaturated solid solution state,the lattice strain of-2.79×10^(-5)and-5.16×10^(-5)was produced after 8 h and 2. h aging *** difference of the lattice parameters between the precipitates and matrix was also considered.A model was established to quantitatively describe the relationship between the precipitation process and dimensional change of 2.2. Al alloy.

关键词： Aluminum alloy Aging Atom probe tomography(APT) Dimensional stability Precipitate

Effects Associated with Nanostructure Fabrication Using In Situ Liquid Cell TEM technology

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Nano-Micro Letters 2015年第4期7卷 385-391页

作者： Xin Chen Lihui Zhou Ping Wang Hongliang cao Xiaoli Miao Feifei Wei Xia Chen shanghai key {2. of Advanced Polymeric Materials and Key Laboratory for Ultrafine Materials of Ministry of Education School of Materials Science and EngineeringEast China University of Science and Technology state key {2. of Functional Materials for Informatic Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences East china University of Science and technology state key {2. of Bioreactor Engineering Biomedical Nanotechnology Center East China University of Science and Technology

We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy *** obtained from fixed electron beam irradiation followed a universal size versus beam dose trend,with precursor concentrations from pure Si Cl4to 0%SiC l4in CH2.l2.and electron beam intensity ranges of two orders of magnitude,showing good controllability of the *** electrons contributed to the determination of the lateral sizes of the nanostructures,while the primary beam appeared to have an effect in reducing the vertical growth *** results can be used to generate donut-shaped *** a scanning electron beam,line structures with both branched and unbranched morphologies were also *** liquid-phase electron-beaminduced deposition technology is shown to be an effective tool for advanced nanostructured material generation.

关键词： Electron-beam-induced deposition In situ TEM Nanostrucutre Semiconductor Nanolithography

基于半导体光子学器件的太赫兹成像技术研究进展

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量子电子学报 2023年第2期40卷 181-192页

作者：王长宋高辉谭智勇曹俊诚中国科学院上海微系统与信息技术研究所太赫兹固态技术重点实验室上海200050 中国科学院大学材料与光电研究中心北京100049

太赫兹(THz)成像是THz技术应用的重要方向之一。基于THz量子级联激光器(QCL)和THz量子阱探测器(QWP)等半导体光子学器件的THz成像系统具有结构紧凑、空间分辨率高、成像信噪比较高等优点,已成为当前研究的热点领域。对国内外关于THz QCL... 详细信息

太赫兹(THz)成像是THz技术应用的重要方向之一。基于THz量子级联激光器(QCL)和THz量子阱探测器(QWP)等半导体光子学器件的THz成像系统具有结构紧凑、空间分辨率高、成像信噪比较高等优点,已成为当前研究的热点领域。对国内外关于THz QCL和THz QWP器件在远场和近场成像应用方面的研究进行了系统综述,分析了THz成像系统的构成和成像效果,总结了各THz成像系统的性能参数情况,并探讨了THz成像系统性能提升的途径及其应用前景。

关键词：激光技术成像太赫兹量子级联激光器量子阱探测器

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6G技术愿景与太赫兹通信电路研究进展

移动通信 2023年第5期47卷 7-13页

作者：华玉冯伟曹俊诚江苏大学物理与电子工程学院江苏镇江212013 中国科学院上海微系统与信息技术研究所太赫兹固态技术实验室上海200050

6G具有低延迟、低功耗、高容量、大规模等特点,太赫兹波凭借大带宽、高速率和低延时等优点,成为6G通信系统的候选技术之一,太赫兹电路是实现太赫兹通信系统的关键组件。介绍了6G技术的发展现状和未来有望实现的应用场景,以及利用二极管... 详细信息

6G具有低延迟、低功耗、高容量、大规模等特点,太赫兹波凭借大带宽、高速率和低延时等优点,成为6G通信系统的候选技术之一,太赫兹电路是实现太赫兹通信系统的关键组件。介绍了6G技术的发展现状和未来有望实现的应用场景,以及利用二极管、晶体管等半导体技术的太赫兹电路的研究进展。目前,对于太赫兹电路的研究正朝着更高频段、更低损耗和更高效率的方向发展。

关键词： 6G 太赫兹通信系统太赫兹电路

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Strong electron–phonon coupling influences carrier transport and thermoelectric performances in group-IV/V elemental monolayers

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npj Computational Materials 2021年第1期7卷 1287-1298页

作者： Yu Wu Bowen Hou Ying Chen Jiang cao Hezhu Shao Yiming Zhang Congcong Ma Heyuan Zhu Rongjun Zhang Hao Zhang key laboratory of Micro and Nano Photonic Structures(MOE)and key laboratory for information Science of Electromagnetic Waves(MOE)and Department of Optical Science and Engineering School of Information Science and TechnologyFudan UniversityShanghaiChina Department of Light Sources and Illuminating Engineering School of Information Science and TechnologyFudan UniversityShanghaiChina School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjingChina College of Electrical and Electronic Engineering Wenzhou UniversityWenzhouChina Yiwu Research Institute of Fudan University Yiwu CityZhejiangChina Nanjing University National Laboratory of Solid State MicrostructureNanjingChina

The interactions between electrons and phonons play the key role in determining the carrier transport properties in *** this work,comprehensive investigations on full electron–phonon(el–ph)couplings and their influences on carrier mobility and thermoelectric(TE)performances of 2. group IV and V elemental monolayers are performed,and we also analyze the selection rules on el–ph couplings using group *** shallow n/p-dopings in Si,Ge,and Sn,ZA/TA/LO phonon modes dominate the intervalley *** strong intervalley scatterings via ZA/TO phonon modes can be identified for CBM electrons in P,As,and Sb,and for VBM holes,ZA/TA phonon modes dominate intervalley scatterings in P while LA phonons dominate intravalley scatterings in As and *** considering full el–ph couplings,the TE performance for these two series of monolayers are predicted,which seriously downgrades the thermoelectric figures of merits compared with those predicted by the constant relaxation time approximation.

关键词： theory phonon coupling

THz Imaging Using a Quantum-Well Photodetector with Background Limited Performance

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chinese Physics Letters 2012年第10期29卷 45-47页

作者： ZHOU Tao ZHANG Rong GUO Xu-Guang TAN Zhi-Yong cao Jun-Cheng key laboratory of {2. solid-state technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050

terahertz(THz)quantum well photodetectors(QWPs)are an extension of quantum well infrared photodetectors in the THz *** construct an imaging system based on a THz QWP with a narrow response range from 3 THz to 6 *** peak responsivity of the THz QWP having background-limited performance is about 0.5 A/W,and the corresponding detectivity reaches 10^(11)cm-Hz^(1/2./W at temperature of 4.2.*** obtain the images of a concealed object by the imaging system and prove that THz QWPs have the potential for imaging applications.

关键词： quantum Quantum system

太赫兹波段金属阵列结构的透射及反射宽谱偏振特性

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光学学报 2018年第5期38卷 123-129页

作者：沈云汪涛汪云邓晓华曹俊诚谭智勇邹林儿代国红南昌大学物理学系江西南昌330031 南昌大学空间科学与技术研究院江西南昌330031 中国科学院上海微系统与信息技术研究所中国科学院太赫兹固态技术重点实验室上海200050

基于计算机仿真技术(CST)软件对二维金属光栅阵列在0.1~10THz波段的偏振特性进行了数值分析,利用光刻和金属薄膜工艺在500μm厚的高阻硅衬底上沉积了2.nm厚的不同结构周期的金属铜光栅阵列,利用傅里叶变换光谱仪测量了该光栅阵列的透射... 详细信息

基于计算机仿真技术(CST)软件对二维金属光栅阵列在0.1~10THz波段的偏振特性进行了数值分析,利用光刻和金属薄膜工艺在500μm厚的高阻硅衬底上沉积了2.nm厚的不同结构周期的金属铜光栅阵列,利用傅里叶变换光谱仪测量了该光栅阵列的透射及反射特性。结果表明:在太赫兹宽谱范围内,该光栅阵列的透射和反射都具有良好的偏振特性,且偏振特性范围可通过调整结构周期进行调节;该研究对太赫兹偏振器的进一步研究及应用提供了参考。

关键词：集成光学偏振特性透射及反射特性金属光栅阵列太赫兹宽谱

Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2.M=Mo and W)monolayers on hexagonal boron nitride

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Nano Research 2018年第12期11卷 6227-6236页

作者： Chunxiao Cong Chenji Zou Bingchen cao Lishu Wu Jingzhi Shahg Haomin Wang Zhijun Qiu Laigui Hu Pengfei Tian Ran Liu Ting Yu state key {2. of ASIC and System School of Information Science and TechnologyFudan UniversityShanghai 200433China Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore 637371Singapore state key {2. of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865Changning RoadShanghai200050China

Two-dimensional (2.) semiconductors, represented by 2. transition metal dichalcogenides (TMDs), exhibit rich valley physics due to strong spin-orbit/spin-valley coupling. The most common way to probe such 2. systems is to utilize optical methods, which can monitor light emissions from various excitonic states and further help in understanding the physics behind such phenomena. Therefore, 2. TMDs with good optical quality are in great demand. Here, we report a method to directly grow epitaxial WS2./sub> and MoS2./sub> monolayers on hexagonal boron nitride (hBN) flakes with a high yield and high optical quality; these monolayers show better intrinsic light emission features than exfoliated monolayers from natural crystals. For the first time, the valley Zeeman splitting of WS2./sub> and MoS2./sub> monolayers on hBN has been visualized and systematically investigated. This study paves a new way to produce high optical quality WS2./sub> and MoS2./sub> monolayers and to exploit their intrinsic properties in a multitude of applications.

关键词： transition metal dichalcogenides intrinsic excitonic emission valley Zeeman splitting hexagonal boron nitride chemical vapor deposition

Charge density wave and weak Kondo effect in a Dirac semimetal CeSbTe

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Science china(Physics,Mechanics & Astronomy) 2021年第3期64卷 90-98页

作者： Peng Li BaiJiang Lv Yuan Fang Wei Guo ZhongZheng Wu Yi Wu DaWei Shen YueFeng Nie Luca Petaccia Chao cao Zhu-An Xu Yang Liu Zhejiang Province key laboratory of Quantum {2. and Device Department of PhysicsZhejiang UniversityHangzhou 310027China Center for Correlated Matter Zhejiang UniversityHangzhou 310058China National laboratory of solid {2. Microstructures College of Engineering and Applied SciencesNanjing UniversityNanjing 210093China state key {2. of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China Elettra Sincrotrone Trieste Strada Statale 14 km 163.5Trieste 34149Italy Department of Physics Hangzhou Normal UniversityHangzhou 310036China

Using angle-resolved photoemission spectroscopy(ARPES) and low-energy electron diffraction(LEED), together with densityfunctional theory(DFT) calculation, we report the formation of charge density wave(CDW) and its interplay with the Kondo effect and topological states in CeSbTe. The observed Fermi surface(FS) exhibits parallel segments that can be well connected by the observed CDWordering vector, indicating that the CDWorder is driven by the electron-phonon coupling(EPC) as a result of the nested FS. The CDW gap is large(~0.3 eV) and momentum-dependent, which naturally explains the robust CDWorder up to high temperatures. The gap opening leads to a reduced density of states(DOS) near the Fermi level(EF), which correspondingly suppresses the many-body Kondo effect, leading to very localized 4 f electrons at 2. K and above. The topological Dirac cone at the X point is found to remain gapless inside the CDW phase. Our results provide evidence for the competition between CDWand the Kondo effect in a Kondo lattice system. The robust CDWorder in CeSbTe and related compounds provide an opportunity to search for the long-sought-after axionic insulator.

关键词： charge density wave Kondo effect Dirac semimetal

Weak localization of bismuth cluster-decorated graphene and its spin-orbit interaction

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Frontiers of physics 2017年第4期12卷 123-130页

作者： Jian-Lei Ge Tian-Ru Wu Ming Gao Zhan-Bin Bai Lu cao Xue-Feng Wang Yu-Yuan Qin Feng-Qi Songi National laboratory of solid {2. Microstructures Collaborative Innovation Center of Advanced Microstructures and Department o/Physics Nanjing University Nanjing 210093 China state key {2. of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China School of Electronic Science and Engineering and National laboratory of solid {2. Microstructures Nanjing University Nanjing 210093 China

Weak-localization （WL） measurements were performed in a Bi cluster-decorated graphene sheet. The charge concentration was kept constant, and the amplitude of the conductance correction was sup- pressed after the Bi-cluster deposition. Detailed WL data were obtained while the gate and temperature were changed. Using E. McCamfs ibrmula, the spin-relaxation time was extracted, which was found to increase with the elastic scattering time. This is attributed to the Elliott-Yafet spin relaxation and Kane-Mele type spin--orbit coupling （SOC）. The SOC strength was enhanced to 2.64 meV as a result of the first deposition. The coverage effect is discussed according to the measurement after tim second deposition.

关键词： graphene cluster deposition weak localization spin-orbit coupling