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Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer

Science China(Information Sciences) 2022年第4期65卷 251-257页

作者： Luding WANG Wenlong CAI Kaihua CAO Kewen SHI bert koopmans Weisheng ZHAO Fert Beijing Institute School of Integrated Circuit Science and Engineering Beihang University Department of Applied Physics Institute for Photonic Integration Eindhoven University of Technology

Perpendicular magnetic tunnel junctions with double-interface free layer(p-DMTJs), which exhibit enhanced tunnel magnetoresistance(TMR) and thermal stability(△) at the nanoscale, have received considerable interest as building blocks for spintronic data storage devices. Heat-assisted magnetic recording(HAMR) techniques have been widely employed in mainstream magnetic storage to enable ultrahigh storage density. However, the data access is achieved by sensing the stray field of the selected magnetic element using a mechanical “read head”, resulting in an unfavorable speed limitation and design complexity. To address this issue, integrating laser-assisted switching with a high-performance magnetic tunnel junction has received interest in spintronic R&D; however, it has not yet been achieved. In this study, we experimentally explored femtosecond(fs) laser-assisted switching in a p-DMTJ device using a direct electrical TMR readout. We demonstrate two reconfigurable switching operations, i.e., binary “write” and unidirectional “reset”, by the interplay of the fs laser and synchronized magnetic field sequence. We further explored the joint effect, and a switching phase diagram was obtained. The effect of the stray field of p-DMTJ, as well as laser helicity,on switching is also discussed. Results show the feasibility of fs laser-assisted writing p-DMTJs, which can pave the way in high-density optospintronic storage applications.

关键词： magnetic tunnel junctions (MTJs) heat-assisted magnetic recording (HAMR) spintronics femtosecond laser thermally-assisted switching (TAS)

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Enhancing sensitivity in atomic force microscopy for planar tip-on-chip probes

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Microsystems & Nanoengineering 2022年第3期8卷 39-49页

作者： H.Tung Ciftci Michael Verhage Tamar Cromwijk Laurent Pham Van bert koopmans Kees Flipse Oleg Kurmosikov Department of Applied Physics Eindhoven University of TechnologyPO Box 5135600 MB Eindhoventhe Netherlands DRF/RAMIS/SPEC-LEPO Centre CEA de Saclay91191 Gif-sr-VvetteFrance Institut Jean Lamour Lorraine University54000 NancyFrance

We present a new approach to tuning-fork-based atomic force microscopy for utilizing advanced"tip-on-chip"probes with high sensitivity and broad ***,such chip-like probes with a size reaching 2×2 mm^(2)drastically perturb the oscillation of the tuning fork,resulting in poor performance in its intrinsic force ***,restoring initial oscillatory characteristics is necessary for regaining high *** this end,we developed a new approach consisting of three basic steps:tuning-fork rebalancing,revamping holder-sensor fixation,and electrode *** rebalancing allows the tuning fork to recover the frequency and regain high Q-factor values up to 10^(4)in air and up to 4×10^(4)in ultra-high vacuum *** floating-like holder-fxation using soft wires significantly reduces energy dissipation from the mounting *** with the soft wires,reconfigured electrodes provide electrical access to the chip-like probe without intervening in the force-sensing ***,our easy-to-implement approach allows converting the atomic force microscopy tip from a passive tool to a dedicated microdevice with extended functionality.

关键词： tuning atomic utilizing

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