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Longitudinal evolution of cortical thickness signature reflecting Lewy body dementia in isolated REM sleep behavior disorder:a prospective cohort study

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Translational Neurodegeneration 2023年第1期12卷 514-528页

作者： Jung Hwan Shin Heejung Kim Yu Kyeong Kim Eun Jin Yoon Hyunwoo Nam beomseok jeon Jee-Young Lee Department of Neurology Seoul Metropolitan Government-Seoul National University Boramae Medical Center and Seoul National University College of MedicineSeoulSouth Korea Department of Nuclear Medicine Seoul Metropolitan Government-Seoul National University Boramae Medical Center and Seoul National University College of MedicineSeoulSouth Korea Institute of Radiation Medicine Medical Research CenterSeoul National UniversitySeoulSouth Korea Department of Neurology Seoul National University Hospital and Seoul National University College of MedicineSeoulSouth Korea

Background The isolated rapid-eye-movement sleep behavior disorder(iRBD)is a prodromal condition of Lewy body disease including Parkinson’s disease and dementia with Lewy bodies(DLB).We aim to investigate the longitudinal evolution of DLB-related cortical thickness signature in a prospective iRBD cohort and evaluate the possible predictive value of the cortical signature index in predicting dementia-first phenoconversion in individuals with *** We enrolled 22 DLB patients,44 healthy controls,and 50 video polysomnography-proven iRBD *** underwent 3-T magnetic resonance imaging(MRI)and clinical/neuropsychological *** characterized DLB-related whole-brain cortical thickness spatial covariance pattern(DLB-pattern)using scaled subprofile model of principal components analysis that best differentiated DLB patients from age-matched *** analyzed clinical and neuropsychological correlates of the DLB-pattern expression scores and the mean values of the whole-brain cortical thickness in DLB and iRBD *** repeated MRI data during the follow-up in our prospective iRBD cohort,we investigated the longitudinal evolution of the cortical thickness signature toward Lewy body ***,we analyzed the potential predictive value of cortical thickness signature as a biomarker of phenoconversion in iRBD *** The DLB-pattern was characterized by thinning of the temporal,orbitofrontal,and insular cortices and relative preservation of the precentral and inferior parietal *** DLB-pattern expression scores correlated with attentional and frontal executive dysfunction(Trail Making Test-A and B:R=−0.55,P=0.024 and R=−0.56,P=0.036,respectively)as well as visuospatial impairment(Rey-figure copy test:R=−0.54,P=0.0047).The longitudinal trajectory of DLB-pattern revealed an increasing pattern above the cut-off in the dementia-first phenoconverters(Pearson’s correlation,R=0.74,P=6.8×10−4)but no significant change in parki

关键词： Rapid eye movement sleep behavior disorder Dementia with Lewy bodies Lewy body disease Cortical thickness Spatial covariance pattern Magnetic resonance imaging

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On-Load Voltage Distortion Compensation Method Using Disturbance Observer for SPM Machines with Closed Slot

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Chinese Journal of Electrical Engineering 2015年第1期1卷 58-69页

作者： beomseok Lee Z.Q.Zhu D.Wu Department of Electronic and Electrical Engineering University of SheffieldSheffieldS13JDUK

This paper proposes an on-load voltage distortion compensation method,in which the voltage distortion is mainly produced in the surface-mounted permanent magnet machines having closed *** from the voltage distortions caused by the inverter,such as dead time and inverter non-linearity,the on-load voltage distortion has relatively large magnitude dependent of machine *** a result,it causes a significant distortion of current waveforms and deteriorates control ***,a voltage disturbance compensation method using a disturbance observer is proposed and *** on the machine model,the disturbance observer is chosen which helps to observe a voltage disturbance,while the error between measured and estimated currents is *** disturbance observer only compensates the sixth-multiple harmonic components of the inverter voltage in synchronous reference *** harmonic compensator with multiple narrow-band pass based adaptive filter is proposed and implemented in the feedback loop with current *** observed voltage disturbances are compensated to the reference *** addition,robust performance of the proposed method is shown against the parameter *** effectiveness of the proposed compensation scheme is validated by the experiments.

关键词： Closed slot disturbance observer inverter non-linearity on-load voltage distortion surface-mounted permanent magnet(SPM)machines

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Bulk-Si photonics technology for DRAM interface[Invited]

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Photonics Research 2014年第3期2卷 S0025-S0033页

作者： Hyunil Byun Jinkwon Bok Kwansik Cho Keunyeong Cho Hanmei Choi Jinyong Choi Sanghun Choi Sangdeuk Han Seokyong Hong Seokhun Hyun TJjeong Ho-Chul Ji In-Sung Joe beomseok Kim Donghyun Kim Junghye Kim jeong-Kyoum Kim Kiho Kim Seong-Gu Kim Duanhua Kong Bongjin Kuh Hyuckjoon Kwon Beomsuk Lee Hocheol Lee Kwanghyun Lee Shinyoung Lee Kyoungwon Na jeongsik Nam Amir Nejadmalayeri Yongsang Park Sunil Parmar Junghyung Pyo Dongjae Shin Joonghan Shin Yong-hwack Shin Sung-Dong Suh Honggoo Yoon Yoondong Park Junghwan Choi Kyoung-Ho Ha Gitae jeong Samsung Electronics 1 SamsungjeonjaroHwasungshiGyoung-gido445-330South Korea

We present photonics technology based on a bulk-Si substrate for cost-sensitive dynamic random-access memory(DRAM)optical interface *** summarize the progress on passive and active photonic devices using a local-crystallized Si waveguide fabricated by solid phase epitaxy or laser-induced epitaxial growth on bulk-Si *** process of integration of a photonic integrated circuit(IC)with an electronic IC is demonstrated using a 65 nm DRAM periphery process on 300 mm wafers to prove the possibility of seamless integration with various complementary metal-oxide-semiconductor *** the bulk-Si photonic devices,we show the feasibility of high-speed multidrop interface:the Mach–Zehnder interferometer modulators and commercial photodetectors are used to demonstrate four-drop link operation at 10 Gb∕s,and the transceiver chips with photonic die and electronic die work for the DDR3 DRAM interface at 1.6 Gb∕s under a 1∶4 multidrop configuration.

关键词： interferometer waveguide interface

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