检索结果-南通市图书馆

A 3.9 V polyanion-type cathode material for Li-ion batteries

在线全文

学校读者我要写书评

暂无评论

Progress in natural Science:Materials International 2011年第3期21卷 211-215页

作者： Lei LIU,Bin ZHANG,Xue-jie HUANG beijing national laboratory for condensed matter physics, institute of physics,chinese academy of sciences,beijing,100190,china beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

Monoclinic phase LiFeSO4F was synthesized by a simple fast solid state reaction from the mixture of FeSO4·7H2O and LiF pulverized by high energy ball milling.m-LiFeSO4F was confirmed by GITT measurement to be a 3.9 V polyanion-type cathode materials for Li-ion *** electrochemical activity can be enhanced by addition of carbon.A discharge capacity of 105 mA·h/g (70%of theoretical value) was achieved for a m-LiFeSO4F/CNT *** separation behavior during lithium extraction and insertion was observed by ex-situ XRD test.

关键词： LiFeSO4F polyanion cathode Li-ion battery

Anomalous Hall effect in perpendicular CoFeB thin films

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

chinese physics B 2014年第4期23卷 9-17页

作者：朱涛 institute of physics and beijing national laboratory for condensed matter physics Chinese Academy of Sciences

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.

关键词： anomalous Hall effect perpendicular magnetic anisotropy magnetic properties of interfaces

Superconductivity at 36 K in gadolinium-arsenide oxides GdO_(1-x)F_xFeAs

在线全文

学校读者我要写书评

暂无评论

Science china(physics,Mechanics & Astronomy) 2008年第6期51卷 719-722页

作者： CHENG Peng, FANG Lei, YANG Huan, ZHU XiYu, MU Gang, LUO HuiQian, WANG ZhaoSheng & WEN HaiHu national laboratory for Superconductivity, institute of physics, chinese academy of sciences, beijing 100190, china beijing national laboratory for condensed matter physics, institute of physics, chinese academy of sciences, beijing 100190, china 1. national laboratory for Superconductivity Institute of Physics Chinese Academy of Sciences Beijing 100190 China 2. beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

In this paper we report the fabrication and superconducting properties of GdO1-xFxFeAs. It was found that when x is equal to 0.17, GdO0.83F0.17FeAs is a su-perconductor with the onset transition temperature Tcon ≈ 36.6 K. Resistivity anomaly near 130 K was observed for all samples up to x = 0.17, and such a phenomenon is similar to that of LaO1-xFxFeAs. Hall coefficient indicates that GdO1-xFxFeAs is conducted by electron-like charge carriers.

关键词： iron-based superconductor high-temperature superconductor

Single-molecule studies of Dna by molecular combing

在线全文

学校读者我要写书评

暂无评论

Progress in natural Science:Materials International 2007年第5期17卷 493-499页

作者： Liu Yuying, Wang Pengye and Dou Shuoxing (College of Science, china Agricultural University, beijing 100083, china laboratory of Soft matter physics, beijing national laboratory for condensed matter physics, institute of physics, chinese academy of sciences, beijing 100080, china) [a]College of Science China Agricultural University Beijing China [b]laboratory of Soft matter physics Beijing National Laboratory for Condensed Matter PhysicsInstitute of Physics Chinese Academy of Sciences Beijing China

Molecular combing is a powerful method for aligning a large array of DMA molecules onto a surface. It is a process whereby Dna molecules are stretched and aligned on a glass surface by the force via fluid flow. The ability to comb up to several hundred Dnas on a single cover slip allows for a statistically significant number of measurements to be made. These features make molecular combing an attractive tool for genomic studies, such as Dna replication, Dna transcription, Dna-protein interaction and so on. In this review article, we discuss the molecular combing principle, method and its applications.

关键词： Dna molecule molecular combing Dna-protein interaction.

Carbon nanotube transistors with graphene oxide films as gate dielectrics

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science china(physics,Mechanics & Astronomy) 2010年第5期53卷 828-833页

作者： FU WangYang,LIU Lei,WANG WenLong,WU MuHong,XU Zhi,BAI XueDong & WANG EnGe beijing national laboratory for condensed matter physics,institute of physics,chinese academy of sciences,beijing 100190,china 1. beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation *** essential component for the development of advanced nanoelectronics devices is processing-compatible ***,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient *** exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

关键词： carbon-based nanoelectronics graphene oxide gate dielectrics

Interference pattern generation and simulation in the single beam of a white light continuum

在线全文

学校读者我要写书评

暂无评论

Science china(physics,Mechanics & Astronomy) 2010年第6期53卷 1060-1064页

作者： YU ZhiHao & WENG YuXiang laboratory of Soft matter physics,institute of physics,chinese academy of sciences,and national laboratory of condensed matter physics,beijing 100190,china 1. laboratory of Soft matter physics Institute of Physics Chinese Academy of Sciences and National Laboratory of Condensed Matter Physics Beijing 100190 China

We demonstrate the interference phenomenon in the White Light Continuum(WLC) generated by a single femtosecond laser beam. Different kinds of spatial interference patterns of the WLC generation under various conditions were investigated. The spatial patterns were attributed to interference between the filaments in the WLC generated by the fundamental laser beam yielding the diffraction effect from spatial confinement. Simulations of different patterns were performed. By comparing the results of simulation with those of experiments,the distances of several micrometers between the neighboring filaments can be derived,which agree with the literature values from direct measurements.

关键词： interference supercontinuum generation ultrafast nonlinear optics

High resistance modulation by the electric field based on La_(0.9)Sr_(0.1)MnO_3/SrTiO_3/Si structure

在线全文

学校读者我要写书评

暂无评论

Science china(physics,Mechanics & Astronomy) 2009年第9期52卷 1299-1301页

作者： YANG Fang, HE Meng, WEN Juan, JIN KuiJuan, LU HuiBin & YANG GuoZhen beijing national laboratory for condensed matter physics, institute of physics, chinese academy of sciences, beijing 100190, china beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when VDS are -2 and -6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si.

关键词： field effect perovskite oxide thin films resistance modulation

An Explicit Function Expression for dc Bias and Temperature Dependence of Magnetoresistances in Magnetic Tunnel Junctions

在线全文

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2002年第6期18卷 497-501页

作者： Xiufeng HANState Key laboratory of Magnetism, institute of physics and Center of condensed matter physics, chinese academy of sciences, beijing 100080, china chinese Acad Sci Inst Phys State Key Lab Magnetism Beijing 100080 Peoples R China chinese Acad Sci Ctr Condensed Matter Phys Beijing 100080 Peoples R China

An explicit function expression for the bias voltage or/and temperature dependences of tunnel magnetoresistance ratio and resistances were obtained with a unique set of intrinsic parameters. Two of these intrinsic parameters are the Curie temperature TC and the density of state (DOS) for itinerant majority and minority electrons ξ(ρM/ρm), which are the eigen parameters of ferromagnetic electrodes. Others are the spin-dependent matrix-element ratio (i.e., |Td|2/|TJ|2 ) and the anisotropic-wavelength-cutoff energy ECγ of spin-wave spectrum in magnetic tunnel junction (MTJ), which are the structure parameters of an MTJ. These intrinsic parameters can be predetermined using the experimental measurement or, in principle, using the first-principle calculation method for an MTJ with the three key layers of FM/I/FM. Furthermore, a series of experimental data for an MTJ, for example, a spin-valve-type MTJ of Ta (5 nm)/Ni79Fe21(25 nm)/lr22Mn78(12 nm)/Co75Fe25(4 nm)/AI(0.8 nm)-oxide/Co75Fe25(4 nm)/Ni79Fe21(20 nm)/Ta (5 nm) in this work, can be self-consistently evaluated and explained using such concise explicit function formulations.

关键词： Magnetic tunnel junction TMR Spin-electron transport Magnon excitation Spin-polarization Magnetotransport

Oxygen vacancy induced magnetism in BaTiO_(3-δ) and Nb:BaTiO_(3-δ) thin films

在线全文

学校读者我要写书评

暂无评论

Science china(physics,Mechanics & Astronomy) 2010年第5期53卷 852-855页

作者： YANG Fang,JIN KuiJuan,LU HuiBin,HE Meng,WANG Cong,WEN Juan & YANG GuoZhen beijing national laboratory for condensed matter physics,institute of physics,chinese academy of sciences,beijing 100190,china 1. beijing national laboratory for condensed matter physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

The unusual magnetic properties are observed in oxygen deficient BaTiO3-δ(BTO) and Nb:BaTiO3-δ(BNTO) thin films fabricated on SrTiO3 substrates by laser molecular beam *** distinct magnetic hysteresis loops are observed in the oxygen deficient BTO and BNTO thin films in a temperature range of 5 to 300 K,whereas the diamagnetism is observed in both BTO and BNTO annealed at 1 atm of *** dopant Nb only enhances the magnetization in BNTO thin films,but has little effect on the *** magnetism of BTO and BNTO films is proposed to be the oxygen vacancies by origin.

关键词： oxygen vacancy magnetism BaTiO3-δ(BTO) Nb:BaTiO3-δ(BNTO) thin films