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Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

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Journal of Semiconductors 2024年第7期45卷 70-75页

作者： Bosen Liu Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei baoshun zhang State Key Laboratory of High-Power Semiconductor Laser School of PhysicsChangchun University of Science and TechnologyChangchun 130022China Nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Suzhou Powerhouse Electronics Technology Co. Ltd.Suzhou 215123China

In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

关键词： AlGaN/GaN MIS HEMTs gate dielectric layer depletion-mode gate reliability I_(on)/I_(off)ratio

水平结构氢终端金刚石MOSFET的研究进展

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固体电子学研究与进展 2024年第3期44卷 185-195页

作者：尹灿邢艳辉张璇张丽于国浩张学敏张宝顺北京工业大学信息学部光电子技术教育部重点实验室北京100124 中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台江苏苏州215123

氢等离子体处理后的金刚石表面具有导电性,室温下二维空穴气(Two-dimensional hole gas,2DHG)面密度可达1013 cm-2,因此利用氢终端金刚石制备的场效应晶体管成为研究重点。本文基于金刚石优异的物理性质,介绍了两种氢终端金刚石2DHG的... 详细信息

氢等离子体处理后的金刚石表面具有导电性,室温下二维空穴气(Two-dimensional hole gas,2DHG)面密度可达1013 cm-2,因此利用氢终端金刚石制备的场效应晶体管成为研究重点。本文基于金刚石优异的物理性质,介绍了两种氢终端金刚石2DHG的形成机理,以耗尽型氢终端金刚石MOSFET为例提出稳定2DHG及提高器件性能的方法,总结增强型氢终端金刚石MOSFET的三种实现方法,并综述氢终端金刚石功率器件研究现状、面临的问题以及对未来发展的展望。

关键词：氢终端金刚石二维空穴气金属氧化物半导体场效应晶体管耗尽型增强型金属氧化物

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论青海省氨氢新能源产业发展

化学工业与工程 2024年第2期41卷 120-130页

作者：张宝顺籍王阳朱杰伟王刚张兵王体虎于一夫天津大学理学院化工学院分子+研究院青海民族大学化学化工学院亚洲硅业(青海)股份有限公司

国家清洁能源产业高地建设是国家赋予青海省的伟大历史使命和重大发展机遇，也是青海省参与国家“双碳”征程的重要途径和直接体现，意义巨大。非连续性清洁能源的大规模、低成本及长时间储存与跨地域高效输运是青海省国家清洁能源产业... 详细信息

国家清洁能源产业高地建设是国家赋予青海省的伟大历史使命和重大发展机遇，也是青海省参与国家“双碳”征程的重要途径和直接体现，意义巨大。非连续性清洁能源的大规模、低成本及长时间储存与跨地域高效输运是青海省国家清洁能源产业高地建设面临的瓶颈难题。近年来，绿氨(NH3)在全球范围内被越来越多地认为是最佳储氢载体和理想零碳燃料，液态绿氨被定义为氢能2.0和清洁能源终极形态。非连续性清洁能源大规模制氢-绿氢大规模合成氨-液氨长时间大规模储存-液氨跨地域大规模输运-氨氢燃料综合应用构成的氨氢新能源产业模式是全球公认的最有希望突破非连续性清洁能源大规模应用瓶颈的途径之一。首先总结了青海省清洁能源产业发展现状，详细介绍了氨氢新能源产业路线及产业化进展，最后对青海省发展氨氢新能源产业面临的机遇与挑战进行了总结与展望。

关键词：青海省清洁能源产业氨氢新能源大规模储能零碳燃料

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Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays

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Journal of Semiconductors 2022年第6期43卷 59-65页

作者： Xuemin zhang Changling Yan Jinghang Yang Chao Pang Yunzhen Yue Chunhong Zeng baoshun zhang State Key Laboratory on High Power Semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022China Nanofabrication Facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

GaN has been widely used in the fabrication of ultraviolet photodetectors because of its outstanding *** this paper,we report a graphene–GaN nanorod heterostructure photodetector with fast photoresponse in the UV *** nanorods were fabricated by a combination mode of dry etching and wet ***,a graphene–GaN nanorod heterostructure ultraviolet detector was fabricated and its photoelectric properties were *** device exhibits a fast photoresponse in the UV *** rising time and falling time of the transient response were 13 and 8 ms,respectively.A high photovoltaic responsivity up to 13.9 A/W and external quantum efficiency up to 479%were realized at the UV *** specific detectivity D*=1.44×10^(10) Jones was obtained at–1 V bias in ambient *** spectral response was measured and the highest response was observed at the 360 nm band.

关键词： graphene GaN nanorods ultraviolet photodetector top–down fabrication

鱼酱排毒合剂对急性鼻窦炎大鼠NF-κB通路的影响

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中国中医急症 2024年第7期33卷 1165-1168,1173页

作者：王娜张莹李玲珑张保顺张锋毛得宏成都中医药大学四川成都610027 重庆市永川区中医院重庆402105 西南大学重庆400715

目的研究鱼酱排毒合剂对急性鼻窦炎大鼠核转录因子-κB(NF-κB)通路相关蛋白表达的影响。方法采用单侧鼻腔接种金黄色葡萄球菌建立大鼠急性鼻窦炎模型,根据急性鼻窦炎评分表评估造模结果。将成模大鼠分为正常组、模型组、鱼酱组(予鱼酱... 详细信息

目的研究鱼酱排毒合剂对急性鼻窦炎大鼠核转录因子-κB(NF-κB)通路相关蛋白表达的影响。方法采用单侧鼻腔接种金黄色葡萄球菌建立大鼠急性鼻窦炎模型,根据急性鼻窦炎评分表评估造模结果。将成模大鼠分为正常组、模型组、鱼酱组(予鱼酱排毒合剂)和阿莫西林组(予阿莫西林克拉维酸分散片),各组给予相应药物治疗7 d。治疗结束后测定各组大鼠鼻腔分泌物的pH值;HE染色观察鼻黏膜组织病理学改变;ELISA检测鼻腔灌洗液及鼻黏膜上清液中肿瘤坏死因子-α(TNF-α)、白细胞介素-6(IL-6)、白细胞介素-1β(IL-1β)水平;Western blotting检测NF-κB信号通路相关蛋白表达水平。结果急性鼻窦炎大鼠炎症模型成功建立。与模型组相比,鱼酱组和阿莫西林组大鼠鼻腔分泌p H值显著降低(P<0.01),鼻黏膜病理损伤明显改善,鼻腔灌洗液和鼻黏膜组织上清液中TNF-α、IL-1β、IL-6水平明显降低(P<0.01),NF-κB相关蛋白表达水平显著下降(P<0.01)。结论鱼酱排毒合剂可通过调节急性鼻窦炎大鼠NF-κB相关信号蛋白的表达,从而改善大鼠急性鼻窦炎症状。

关键词：急性鼻窦炎鱼酱排毒合剂 NF-κB通路炎症因子大鼠

海上风电柔性直流输电换流变差动保护的适应性分析

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浙江电力 2024年第3期43卷 8-18页

作者：程骁顾乔根任旭超郑超黄涛张宝顺南京南瑞继保电气有限公司南京211102 国网江苏省电力有限公司南京210024

海上风电柔性直流输电系统的故障特性有别于常规电力系统,因此常规继电保护方案应用于海上风电柔性直流输电系统时可能存在适应性不足的风险。分析了海上风电柔性直流输电系统故障情形下,不对称的电气量引发的谐波分量以及故障穿越过程... 详细信息

海上风电柔性直流输电系统的故障特性有别于常规电力系统,因此常规继电保护方案应用于海上风电柔性直流输电系统时可能存在适应性不足的风险。分析了海上风电柔性直流输电系统故障情形下,不对称的电气量引发的谐波分量以及故障穿越过程中的负序抑制、限流措施对差动保护的影响。推导了计及序分量的差动保护灵敏度计算式并进行适应性分析,指出故障情形下的奇次谐波容易对差动保护产生影响,负序抑制及限流措施也将导致差动保护灵敏度下降。结合实际示范工程的仿真系统进行了大量仿真计算,结果表明,常规差动保护方案的灵敏性、可靠性均存在下降的问题。

关键词：柔性输电换流变压器差动保护谐波闭锁灵敏度

Novel self-assembled porous yolk-shell NiO nanospheres with excellent electrochromic performance for smart windows

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Particuology 2024年第1期84卷 72-80页

作者： baoshun Wang Ya Huang Siming Zhao Run Li Di Gao Hairong Jiang Rufan zhang Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology Department of Chemical EngineeringTsinghua UniversityBeijing100084China

With the rapid development of optoelectronics,electrochromic(EC)materials(ECMs)with the advan-tages of low power consumption,easy viewing,high contrast ratio,etc have attached more and more attention from the fields of smart windows,electronic billboards,emerging wearable and portable electronics,and other next-generation *** oxide(NiO)is a promising candidate for high-performance ECMs because of its neutral-colored states and low ***,NiO-based ECMs still face the problem of slow switching speed due to their low electrical conductivity and small lattice ***-organic frameworks(MOFs)are promising candidates to fabricate hollow and porous transition metal oxides(TMOs)with high ion transport efficiency,excellent specific capacitance,and electrochemical *** this work,porous yolk-shell NiO nanospheres(PYS-NiO NSs)were syn-thesized via a solvothermal and subsequent calcination process of Ni-MOF,which exhibited outstanding EC *** the large specific surface areas and hollow porous nanostructures were conducive to ionic transport,PYS-NiO NSs exhibited a fast coloring/bleaching speed(3.6/3.9 s per one coloring/bleaching cycle)and excellent cycling stability(82%of capacity retention after 3000 cycles).These superior EC properties indicated that the PYS-NiO NSs was a promising candidate for high-performance EC *** work provides a new and feasible strategy for the efficient preparation of TMOs ECMs with good EC performance,especially fast switching speed.

关键词： Electrochromic Nickel oxide Metal-organic frameworks Hollow structure Smart windows

基于虚拟电阻的混合直流输电系统振荡抑制策略

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浙江电力 2024年第08期43卷 47-56页

作者：殷子寒李钢张宝顺邹强陈金玉晁武杰邓超平南京南瑞继保电气有限公司国网福建省电力有限公司电力科学研究院

针对混合直流输电系统在其定直流电流控制器参数增大时容易发生直流电流振荡的问题，提出一种基于虚拟电阻的振荡抑制策略。该策略基于电流振荡分量和引入的虚拟电阻，产生与扰动分量反相的附加电压，实现对直流电流振荡的抑制。首先，... 详细信息

针对混合直流输电系统在其定直流电流控制器参数增大时容易发生直流电流振荡的问题，提出一种基于虚拟电阻的振荡抑制策略。该策略基于电流振荡分量和引入的虚拟电阻，产生与扰动分量反相的附加电压，实现对直流电流振荡的抑制。首先，建立混合直流输电系统的小信号模型，分析定直流电流控制器参数对系统小信号稳定性的影响。其次，提出基于虚拟电阻的振荡抑制策略，研究虚拟电阻对系统小信号稳定性的影响，并通过PSCAD/EMTDC仿真验证了所提控制策略的有效性。最后，分析在不同定直流电流控制参数下虚拟电阻的稳定范围。研究结果表明，所提控制策略能够有效解决直流电流振荡的问题，提高系统稳定性。

关键词：混合直流输电系统直流电流振荡虚拟电阻小信号模型

Study of enhancement-mode GaN pFET with H plasma treated gate recess

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Journal of Semiconductors 2023年第11期44卷 63-68页

作者： Xiaotian Gao Guohao Yu Jiaan Zhou Zheming Wang Yu Li Jijun zhang Xiaoyan Liang Zhongming Zeng baoshun zhang School of Materials Science and Engineering Shanghai UniversityShanghai 200444China Nanofabrication Facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China

This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT *** transistor exhibits a threshold voltage(VTH)of−3.8 V,a maximum ON-state current(ION)of 1.12 mA/mm,and an impressive ION/IOFF ratio of 10^(7).To achieve these remarkable results,an H plasma treatment was strategically applied to the gated p-GaN region,where a relatively thick GaN layer(i.e.,70 nm)was kept intact without aggressive gate *** this treatment,the top portion of the GaN layer was converted to be hole-free,leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gateoxide/GaN *** approach allows for E-mode operation while retaining high-quality p-channel characteristics.

关键词： GaN pFET E-mode H plasma treatment ION/IOFF ratio