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Integrated solar capacitors for energy conversion and storage

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Nano Research 2017年第5期10卷 1545-1559页

作者： Ruiyuan Liu Yuqiang Liu Haiyang Zou Tao Song baoquan sun Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Institute of Functional Nano and Soft: Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215123 China School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332-0245 USA

Solar energy is one of the most popular clean energy sources and is a promising alternative to fulfill the increasing energy demands of modem society. Solar cells have long been under intensive research attention for harvesting energy from sunlight with a high power-conversion efficiency and low cost. However, the power outputs of photovoltaic devices suffer from fluctuations due to the intermittent instinct of the solar radiation. Integrating solar cells and energy- storage devices as self-powering systems may solve this problem through the simultaneous storage of the electricity and manipulation of the energy output. This review the research progress in the integration of new-generation solar cells with supercapacitors, with emphasis on the structures, materials, performance, and new design features. The current challenges and future prospects are discussed with the aim of expanding research and development in this field.

关键词： solar cell supercapacitor,energy conversion andstorage,integrated devices

Two-dimensional layered material/silicon heterojunctions for energy and optoelectronic applications

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Nano Research 2016年第1期9卷 72-93页

作者： Yuming Wang Ke Ding baoquan sun Shuit-Tong Lee Jiansheng Jie Institute of Functional Nano & Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science and Technology(NANO-CIC) Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Soochow University Suzhou 215123 China

As one of the most important semiconductor materials, silicon （Si） has been widely used in current energy and optoelectronic devices, such as solar cells and photodetectors. However, the traditional Si p-n junction solar cells need complicated fabrication processes, leading to the high cost of Si photovoltaic devices. The wide applications of Si-based photodetectors are also hampered by their low sensitivity to ultraviolet and infrared light. Recently, two-dimensional （2D） layered materials have emerged as a new material system with tremendous potential for future energy and optoelectronic applications. The combination of Si with 2D layered materials represents an innovative approach to construct high-performance optoelectronic devices by harnessing the complementary advantages of both materials. In this review, we summarize the recent advances in 2D layered material/Si heterojunctions and their applications in photovoltaic and optoelectronic devices. Finally, the outlook and challenges of 2D layered material/Si heterojunctions for high-performance device applications are presented.

关键词： two-dimensional layeredmaterials silicon heterojunctions solar cells photodetectors

Self-assembly of gold nanoparticles into nanoholes through annealing in the fabrication of square lattices of nanocylinders

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Chinese Optics Letters 2007年第11期5卷 657-659页

作者：张新平 baoquan sun Hongcang Guo 田金荣宋晏蓉王丽 College of Applied Sciences Beijing University of Technology Beijing 100022 Cavendish Laboratory University of Cambridge Cambridge CB30HE UK Fourth Physics Institute University of Stuttgart Stuttgart D-70569 Germany

We demonstrate the self-assembly of solution-processible gold nanoparticles into the nanoholes consisting of patterned substrate through annealing, which facilitates successful fabrication of square lattices of gold n... 详细信息

关键词： Annealing Aspect ratio Gold Nanoparticles Self assembly

Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

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Nano Research 2017年第11期10卷 3848-3856页

作者： Zhouhui Xia Pengfei Li Yuqiang Liu Tao Song Qiaoliang Bao Shuit-Tong Lee baoquan sun Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Institute of Functional Nano and Soft Materials(FUNSOM)Soochow University Suzhou 215123 China Department of Materials Science and Engineering Monash University Clayton Victoria 3800 Australia

In conventional crystalline silicon （Si） homojunction solar cells,a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear ***,this technique involves an energy intensive,high temperature （～ 800 ℃） process and toxic doping *** phosphorus （BP） is a two-dimensional,narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting ***,we place BP：zinc oxide （ZnO） composite films between Si and aluminum （Al） to improve their *** the BP harvests photons with energies below 1.1 eV from the crystalline Si,the ZnO carrier concentration increases dramatically due to charge *** photo-induced doping results in a high carrier concentration in the ZnO film,mimicking the modulated doping technique used in semiconductor *** show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films,thus reducing the contact resistance between Si and Al.A photovoltaic power conversion efficiency of 15.2% is achieved in organic-Si heterojunction solar cells that use a ZnO：BP *** findings demonstrate an effective way of improving Si/metal contact via a simple,low temperature process.

关键词： black phosphorus zinc oxide light induced dopant photovoltaics

Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip

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Journal of Semiconductors 2018年第8期39卷 53-56页

作者： Pengyi Yue Xiuming Dou Xiangbin Su Zhichuan Niu baoquan sun Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China University of Chinese Academy of Sciences Beijing 100049 China

We report on room temperature continuous-wave optically pumped InAs/GaAs quantum dot whispering gallery mode microdisk lasers, heterogeneously integrated on silica/silicon chips. The microdisks are fabricated by photolithography and inductively coupled plasma etching. The lasing wavelength is approximately 1200 nm and the obtained lowest laser threshold is approximately 28 μW. The experimental results show an approach of possible integrated Ⅲ–Ⅴ optical active materials on silica/silicon chip for low threshold WGM microdisk lasers.

关键词： quantum dot whispering gallery mode laser

Optical properties of Nd^(3+) ions doped GdTaO_(4) for pressure and temperature sensing

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Journal of Rare Earths 2022年第6期40卷 870-877,I0001页

作者： Pengyu Zhou Qingli Zhang Fang Peng baoquan sun Xiuming Dou Bao Liu Dandan Han Yongzhou Xue Kun Ding School of Science Northeast Electric Power UniversityJilin 132012China Key Laboratory of Photonic Devices and Materials Anhui Institute of Optics and Fine MechanicsChinese Academy of SciencesHefei 230031China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Pressure-and temperature-dependent luminescence properties of ^(3)F_(3/2)→^(4)I9/2 transition of Nd^(3+):GdTaO_(4) were studied for potential applications in optical *** isolated emission lines corresponding to^(3)F_(3/2)(R2,1)→^(4)I_(9/2)(Z5)transitions,located at 920 and 927 nm under ambient condition,are very sensitive to pressure with coefficients of-15.6 and-14.5 cm^(-1)/GPa determined in a pressure range up to about 9 *** luminescence intensity ratio between the two emission lines exhibits a large dependence with temperature in a range from 80 to 620 K,the corresponding temperature sensitivity at room temperature is similar to that of Nd^(3+):*** advantages,together with the other observed features of high stable position relationship under pressure and low thermal shifts for the two emission lines indicate that Nd^(3+):GdTaO_(4) is a promising candidate to be used as pressure and temperature sensors in the near-infrared spectral range.

关键词： Trivalent neodymium ion Rare-earth tantalate Near-infrared luminescence Pressure sensing Temperature sensing

Cooperative interactions among CTA^＋, Br^-and Ag^＋ during seeded growth of gold nanorods

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Nano Research 2017年第6期10卷 2146-2155页

作者： Yong Xu Lei Chen Xingchen Ye Xuchun Wang Jiaqi Yu Yang Zhao Muhan Cao Zhouhui Xia baoquan sun Qiao Zhang Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University Suzhou 215123 China Department of Chemistry University of California Berkeley Berkeley CA 94720 USA

We have carried out a comprehensive study on the formation mechanism of Au nanorods （AuNRs） in binary surfactant mixtures composed of quaternary ammonium halide and sodium oleate （NaOL）. We identify the cetyltrimethyl ammonium （CTA）-Br-Ag^＋ complex as the key ingredient in directing the anisotropic growth of AuNRs. Based on the improved understanding of the cooperative interactions among CTA^＋, Br^- and Ag^＋, we further demonstrate that AgBr, which is readily solubilized by the cetyltrimethyl ammonium bromide （CTAB） or cetyltrimethyl ammonium chloride （CTAC） micelles, can be employed as the combined source of Ag^＋ and Br^- for the preparation of AuNRs. The growth of high-quality AuNRs can be completed within 15 min under extremely low bromide content （0.1 mM）.

关键词： gold nanorods anisotropic nanostructure surface plasmon resonance seeded growth cetyltrimethyl ammoniumbromide (CTAB)

Synthesis and optical properties of high-quality ultrathin homogeneous GaAs_(1-x)Sb_(x) nanowires

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Science China(Physics,Mechanics & Astronomy) 2024年第12期67卷 148-156页

作者： Ran Zhuo Lianjun Wen Jian Wang Xiuming Dou Lei Liu Xiyu Hou Dunyuan Liao baoquan sun Dong Pan Jianhua Zhao State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing100049China

Ternary GaAs_(1-x)Sb_(x) nanowires with designable bandgaps and lattice constants show important potential applications in band structure engineering as well as optical and optoelectronic ***,large diameters,low aspect ratios and even spontaneous core-shell structures are always found in GaAs_(1-x)Sb_(x) nanowires,which are hindering their optical and optoelectronic ***,we report the controlled synthesis of ultrathin GaAs_(1-x)Sb_(x) nanowires on Si(111)substrates by molecular-beam *** is found that ultrathin GaAs_(1-x)Sb_(x) nanowires with a diameter less than 40 nm and an aspect ratio exceeding 35 can be obtained by precisely tuning the Ga flux and the growth *** growth of the ultrathin GaAs_(1-x)Sb_(x) nanowires with a large-composition-range(0≤x≤0.4)are also achieved by directly tuning the antimony *** structural studies confirm that these ultrathin nanowires exhibit high crystal-quality,and no spontaneous core-shell nanostructures are observed along the axial and radial directions of the *** far as we known,it is the first time that homogeneous GaAs_(1-x)Sb_(x) nanowires are grown by molecular-beam *** measurements prove that the ultrathin GaAs_(1-x)Sb_(x) nanowires have a narrower full width at half maximum of the photoluminescence peak compared with those results reported in the literatures,and their emission wavelengths can be tuned from 850 nm(GaAs)to 1271 nm(GaAs_(0.6)Sb_(0.4)).In addition,the optical properties of the ultrathin GaAs_(1-x)Sb_(x) nanowires can be further improved by using the Al_(0.5)Ga_(0.5)As shell as a passivation *** work lays a foundation for the development of high-performance GaAs_(1-x)Sb_(x) nanowire-based optical and optoelectronic devices.

关键词： GaAs_(1−x)Sb_(x) nanowire molecular-beam epitaxy optical property

Photo-induced doping effect and dynamic process in monolayer MoSe

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Journal of Semiconductors 2020年第8期 66-70页

作者： Qian Yang Yongzhou Xue Hao Chen Xiuming Dou baoquan sun State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences

Dynamic processes of electron transfer by optical doping in monolayer MoSe;at 6 K are investigated via measuring time resolved photoluminescence（PL） traces under different excitation powers. Time-dependent electron transfer process can be analyzed by a power-law distribution of t;with α = 0.1–0.24, depending on the laser excitation power. The average electron transfer time of approximately 27.65 s is obtained in the excitation power range of 0.5 to 100 μW. As the temperature increases from 20 to 44 K, the energy difference between the neutral and charged excitons is observed to decrease.

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