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Effects of edge on graphene plasmons as revealed by infrared nanoimaging

Light(Science & Applications) 2016年第1期5卷 266-274页

作者： Qingyang Xu Teng Ma Mohammad Danesh bannur nanjunda shivananju Sheng Gan Jingchao Song Cheng-Wei Qiu Hui-Ming Cheng Wencai Ren Qiaoliang Bao Institute of Functional Nano&Soft Materials(FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials&DevicesSoochow University199 Ren-ai RoadSuzhou 215123JiangsuChina Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang 110016China Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3Singapore 117583Singapore Department of Materials Science and Engineering Monash UniversityClaytonVictoria 3800Australia

We used scattering-type scanning near-field optical microscopy(s-SNOM)to investigate the plasmonic properties of edges in well-defined graphene nanostructures,including sharp tapers,nanoribbons and nanogaps,which were all fabricated via the growth-etching chemical vapor deposition(GECVD)*** obtained near-field images revealed the localized plasmon modes along the graphene nanoribbon;these modes strongly depended on the size of the graphene pattern,the angle of the tapered graphene and the infrared excitation *** interesting plasmon modes were verified by numerical simulations and explained by the reflection,and interference of electromagnetic waves at the graphene–SiO_(2) *** constructive interference at the graphene nanogap caused by charge accumulation was demonstrated for the first *** the infrared nanoimaging technique,greater plasmon broadening was observed in the zigzag edge than in the armchair *** study suggests that graphene edges should be separated by an effective working distance to avoid the overlapping of localized plasmon modes,which is very important for the design of graphene-based plasmonic circuits and devices.

关键词： edge chirality graphene graphene plasmon nanoribbon nanogap near-field microscopy s-SNOM

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