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Journal of Semiconductors 2017年第12期38卷 13-21页

作者： Neeraj Jain balwinder raj VLSI Design Lab Department of Electronics and Communication EngineeringDr.B.R.Ambedkar National Institute of Technology(NIT)JalandharIndia

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects （SCEs）, leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SO1 FinFET is one of the best multigate structures that has gained importance in all electronic design automation （EDA） industries due to its improved short channel effects （SCEs）, because of its more effective gate-controlling capabilities. In this paper, our aim is to ex- plore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evalu- ated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope （SS）, ON current （Ion）, OFF current （/off） and Ion/loll ratio. The potential benefits of SOl FinFET at drain-to-source voltage, liDS = 0.05 V and VDS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain （Av）, output conductance （go）, trans-conductance （gin）, gate capacitance （Cgg）, and cut-off frequency OCT = gm/2πCgg） with spacer region variations.

关键词： SOI FinFET SCEs underlap region DIBL analog and RF performance

Comparative analysis of memristor models and memories design

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Journal of Semiconductors 2018年第7期39卷 92-103页

作者： Jeetendra Singh balwinder raj VLSI Lab Department of ECE Dr.B.R.Ambedkar National Institute of Technology Jalandhar

The advent of the memristor breaks the scaling limitations of MOS technology and prevails over emerging semiconductor devices. In this paper, various memristor models including behaviour, spice, and experimental are investigated and compared with the memristor＇s characteristic equations and fingerprints. It has brought to light that most memristor models need a window function to resolve boundary conditions. Various challenges of availed window functions are discussed with matlab＇s simulated results. Biolek＇s window is a most acceptable window function for the memristor, since it limits boundaries growth as well as sticking of states at boundaries. Simmons tunnel model of a memristor is the most accepted model of a memristor till now. The memristor is exploited very frequently in memory designing and became a prominent candidate for futuristic memories. Here, several memory structures utilizing the memristor are discussed. It is seen that a memristor-transistor hybrid memory cell has fast read/write and low power operations. Whereas,a 1 T1 R structure provides very simple,nanoscale,and non-volatile memory that has capabilities to replace conventional Flash memories. Moreover, the memristor is frequently used in SRAM cell structures to make them have non-volatile memory. This paper contributes various aspects and recent developments in memristor based circuits, which can enhance the ongoing requirements of modern designing criterion.

关键词： memristor modeling window function nonlinear non-volatile memory

Analysis and performance exploration of high performance(HfO_2) SOI FinFETs over the conventional(Si_3N_4) SOI FinFET towards analog/RF design

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Journal of Semiconductors 2018年第12期39卷 68-74页

作者： Neeraj Jain balwinder raj VLSI Design Lab Department of Electronics and Communication Engineering Dr.B.R.Ambedkar National Institute of Technology (NIT)

Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET is ongoing and the analog/RF performance is most affected by increased SCEs(short channel effects) in sub22 nm technology nodes. This paper explores the analog/RF performance study and analysis of high performance device-D2(conventional Hf02 spacer SOI FinFET) and device-D3(source/drain extended Hf02 spacer SOI FinFET) over the device-D1(conventional Si3 N4 spacer SOI FinFET) at 20 nm technology node through the 3-D(dimensional) simulation process. The major performance parameters like I(ON current), I(OFF current), gm(transconductance), gd(output conductance), A(intrinsic gain), SS(sub-threshold slope), TGF = g/I(trans-conductance generation factor), VEA(early voltage), GTFP(gain trans-conductance frequency product), TFP(tansconductance frequency product), GFP(gain frequency product), and f(cut-off frequency) are studied for evaluating the analog/RF performance of different flavored SOI FinFET structures. For analog performance evaluation,device-D3 and D2 give better results in terms of gm, ID(drain current) and SS parameters, and for RF performance evaluation device-D1 is better in terms of f, GTFP, TFP, and GFP parameters both at low and high values of V=0.05 V and V=0.7 V respectively.

关键词： SOI FinFET SCEs intrinsic gain trans-conductance cut-off frequency

Compact model for ballistic single wall CNTFET under quantum capacitance limit

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Journal of Semiconductors 2016年第10期37卷 48-55页

作者： Amandeep Singh Mamta Khosla balwinder raj Department of Electronics & Communication National Institute of Technology Jalandhar Punjab India

This paper proposes a compact model for carbon nanotube field effect transistor（CNTFET） based on surface potential and conduction band minima. The proposed model relates the I–V characteristics to chirality under quantum capacitance limit. C–V characteristics have been efficiently modelled for different capacitance models which are used to find the relationship between CNT surface potential and gate voltage. The role of different capacitances is discussed and it has been found that the proposed circuit compact model strictly follows quantum capacitance limit. The proposed model is efficiently designed for circuit simulations as it denies self-consistent numerical simulation. Furthermore, this compact model is compared with experimental results. The model has been used to simulate an inverter using HSPICE.

关键词： carbon nanotube(CNT) device modelling ballistic CNTFET quantum capacitance

Modeling and simulation of carbon nanotube field effect transistor and its circuit application

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Journal of Semiconductors 2016年第7期37卷 35-40页

作者： Amandeep Singh Dinesh Kumar Saini Dinesh Agarwal Sajal Aggarwal Mamta Khosla balwinder raj Department of Electronics & Communication National Institute of Technology

The carbon nanotube field effect transistor （CNTFET） is modelled for circuit application. The model is based on the transport mechanism and it directly relates the transport mechanism with the chirality. Also, it does not consider self consistent equations and thus is used to develop the HSPICE compatible circuit model. For validation of the model, it is applied to the top gate CNTFET structure and the MATLAB simulation results are compared with the simulations of a similar structure created in NanoTCAD ViDES. For demonstrating the circuit compatibility of the model, two circuits viz. inverter and SRAM are designed and simulated in HSPICE. Finally, SRAM performance metrics are compared with those of device simulations from NanoTCAD ViDES.

关键词： carbon nanotube CNTFET SRAM HSPICE NanoTCAD ViDES

Study of Type-B QPOs Observed in Black Hole X-Ray Binary Swift J1728.9-3613

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Research in Astronomy and Astrophysics 2024年第3期24卷 1-9页

作者： raj Kumar Astrophysical Sciences Division Bhabha Atomic Research CentreMumbai 400085India Homi Bhabha National Institute Mumbai 400094India

We report the detection of type-B quasi-periodic oscillation(QPO)of the black hole X-ray binary Swift J1728.9-3613 observed by NICER during the 2019 outburst.A type-B QPO was observed for the first two days and it disappeared as flux increased,but again appeared at∼7.70 Hz when flux was dramatically *** source was found in the soft intermediate state during these *** further studied the energy dependence of the *** found that QPO was observed only for a higher energy range implying that the origin of QPO is possibly due to the corona emitting higher energy photons by the inverse Compton *** variation of spectral parameters can be explained with the disk truncation *** fractional rms was found to be monotonically increased with *** phase lag spectrum followed the“U-shaped”*** rms and phase lag spectrum are modeled and explained with the single-component Comptonization model vkompthdk.

关键词： X-rays binaries-accretion-accretion disks-X-rays individual (Swift J1728.9-3613)

Significance of including lid thickness and particle shape factor in numerical modeling for prediction of particle trap efficiency of invert trap

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Water Science and Engineering 2024年第2期17卷 166-176页

作者： Salman Beg Deo raj Kaushal Department of Civil Engineering Indian Institute of Technology DelhiNew Delhi 110016India

Sediment accumulation on the bed of open sewers and drains reduces hydraulic efficiency and can cause localized *** invert traps installed underneath the bed of open sewers and drains can eliminate sediment build-up by catching sediment *** three-dimensional(3D)computational studies have examined the particle trapping performance of invert traps of different shapes and depths under varied sediment and flow conditions,considering particles as *** two-dimensional and 3D numerical modeling,researchers assumed the lid geometry to be a thin line and a plane,*** this 3D numerical study,the particle trapping efficiency of a slotted irregular hexagonal invert trap fitted at the flume bottom was examined by incorporating the particle shape factor of non-spherical sewage solid particles and the thicknesses of upstream and downstream lids over the trap in the discrete phase model of the ANSYS Fluent 2020 R1 *** volume of fluid(VOF)and the realizable k-turbulence models were used to predict the velocity *** two-dimensional particle image velocimetry(PIV)was used to measure the velocity field inside the invert *** results showed that the thicknesses of upstream and downstream lids affected the velocity field and turbulent kinetic energy at all flow *** joint impact of the particle shape factor and lid thickness on the trap efficiency was *** both the lid thickness and particle shape factor were considered in the numerical modeling,trap efficiencies were underestimated,with relative errors of-8.66%to-0.65%in comparison to the experimental values of Mohsin and Kaushal(2017).They were also lower than the values predicted by Mohsin and Kaushal(2017),which showed an overall overestimation with errors of-2.3%to 17.4%.

关键词： Invert trap Lid thickness Particle image velocimetry Particle shape factor Turbulent kinetic energy Scanning electron microscope

Nonlinear system dynamics of calcium and nitric oxide due to cell memory and superdiffusion in neurons

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Communications in Theoretical Physics 2024年第5期76卷 16-32页

作者： Anand Pawar Kamal raj Pardasani Department of Mathematics Bioinformatics and Computer ApplicationsMaulana Azad National Institute of TechnologyBhopal-462003Madhya PradeshIndia

The integer-order interdependent calcium([Ca^(2+)])and nitric oxide(NO)systems are unable to shed light on the influences of the superdiffusion and memory in triggering Brownian motion(BM)in ***,a mathematical model is constructed for the fractional-order nonlinear spatiotemporal systems of[Ca^(2+)]and NO incorporating reaction-diffusion equations in *** two-way feedback process between[Ca^(2+)]and NO systems through calcium feedback on NO production and NO feedback on calcium through cyclic guanosine monophosphate(cGMP)with plasmalemmal[Ca^(2+)]-ATPase(PMCA)was incorporated in the *** Crank–Nicholson scheme(CNS)with Grunwald approximation along spatial derivatives and L1 scheme along temporal derivatives with Gauss–Seidel(GS)iterations were *** numerical outcomes were analyzed to get insights into superdiffusion,buffer,and memory exhibiting BM of[Ca^(2+)]and NO *** conditions,events and mechanisms leading to dysfunctions in calcium and NO systems and causing different diseases like Parkinson’s were explored in neurons.

关键词： [Ca^(2+)]and nitric oxide signaling reaction-diffusion equations fractional-order systems Grunwald approximation Gauss-Seidel iterations

Effect of cooling media on bead geometry,microstructure,and mechanical properties of wire arc additive manufactured IN718 alloy

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Advances in Manufacturing 2024年第1期12卷 124-149页

作者： Parveen Kumar Satish Kumar Sharma Ratnesh Kumar raj Singh Department of Mechanical Engineering Thapar Institute of Engineering and TechnologyPatialaPunjab147004India

This work aims to present and explore thermal management techniques for the wire arc additive manufacturing(WAAM)of IN718 *** heat can be mitigated via air or water *** this study,the material was deposited under four different heat-input conditions with air or water *** air cooling,the layer is deposited in a normal atmospheric air environment,whereas with water cooling,the material is deposited inside a water tank by varying the water *** validate the air and water cooling thermal management techniques,IN718 single-pass and multilayer linear walls were deposited using the bidirectional gas metal arc welding based WAAM setup under four different heat input *** the deposition of single layers,the temperature profiles were recorded,and the geometric and microstructural features were *** multilayer wall structures,the mechanical properties(hardness,tensile strength,and elongation)were determined and assessed using the corresponding microstructural features explored through scanning electron microscopy(SEM),energy dispersive spectroscopy(EDS),and electron backscatter diffraction(EBSD)*** microstructure observed through SEM analysis in the building direction was found to be nonhomogenous compared with that in the deposition ***,water cooling was found to govern bead characteristics,such as wall width and *** grain size and anisotropy of the mechanical properties also decreased in the water-cooled ***,water cooling is an economical and efficient method to mitigate excessive heat accumulation in WAAM-deposited IN718.

关键词： Air cooling Water cooling IN718 Bead characteristics Microstructure Electron backscatter diffraction(EBSD)

Dynamics of some new solutions to the coupled DSW equations traveling horizontally on the seabed

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Journal of Ocean Engineering and Science 2024年第2期9卷 154-163页

作者： raj Kumar Ravi Shankar Verma Department of Mathematics Faculty of Engineering&TechnologyVeer Bahadur Singh Purvanchal UniversityJaunpur 222003India

The system of(1+1)-coupled Drinfel’d-Sokolov-Wilson equations describes the surface gravity waves travelling horizontally on the *** objective of the present research is to construct a new variety of analytical solutions for the *** invariants are derived with the aid of Killing form by using the optimal algebra classification via Lie symmetry *** invariant solutions involve time,space variables,and arbitrary *** adequate constraints on arbitrary constants,solutions are represented graphically to make them more applicable in designing sea *** behavior of solutions shows asymptotic,bell-shaped,bright and dark soliton,bright soliton,parabolic,bright and kink,kink,and periodic *** constructed results are novel as the reported results[26,28,29,30,33,38,42,49]can be deduced from the results derived in this *** remaining solutions derived in this study,are absolutely different from the earlier *** this study,the physical character of analytical solutions of the system could aid coastal engineers in creating models of beaches and ports.

关键词： Coupled Drinfel’d-Sokolov-Wilson model Invariants Killing form Optimal sub algebra Lie symmetry reductions