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The Impact of Jams on the Vending Robot

Open Journal of Applied Sciences 2024年第9期14卷 2515-2518页

作者： Bourama Coulibaly Drissa Traore bakary dit dembo sylla Marie Bernard Sidibe Electrical Engineering Department Normal School of Technical and Vocational Education (ENETP) Bamako Mali National Engineering School Abderhamane Baba Tour (ENI-ABT) Bamako Mali

This study aims to identify the causes of sensor jams and its impact on the operation of vending machines. The vending machine is a machine that automatically dispenses products such as drinks, tickets, sandwiches and biscuits, by inserting change or credit card into the machine. This technological feat is due to the advent of sensors. A sensor is a part of the measurement chain, it receives the quantity to be measured and provides information directly linked to this quantity. However, these vending robots are faced with malfunctions linked to sensor jams. The identification of the jam phenomenon was possible thanks to the inspection and monitoring of the various sensors installed on the vending robot. And Cadence software was used to model, control and locate the jammed sensor(s). The various tests were carried out by setting the robot in motion to better understand the causes of the phenomenon. The jam is therefore the phenomenon which triggers the sensors permanently, which causes the automatic vending robot to stop functioning. And this jam was due to the presence of water droplets on the sensor or dirt. This presence of water droplets on the sensor is linked to an increase in temperature. Controlling the temperature and locating the jammed sensor has made it possible to considerably reduce jamming and its harmful effects on the vending machine robot.

关键词： Jam Sensor Dispenser Robot

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Junction Surface Recombination Concept as Applied to Silicon Solar Cell Maximum Power Point Determination Using Matlab/Simulink: Effect of Temperature

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Journal of Modern Physics 2018年第2期9卷 172-188页

作者： bakary dit dembo sylla Ibrahima Ly Ousmane Sow Babou Dione Youssou Traore Grégoire Sissoko Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal Electromecanical department Polytechnic School of Thiès Thiès Senegal University Institute of Technology University of Thiès Thiès Senegal

In this work, we study the method for determining the maximum of the minority carrier recombination velocity at the junction Sfmax, corresponding to the maximum power delivered by the photovoltaic generator. For this, we study the temperature influence on the behavior of the front white biased solar cell in steady state. By solving the continuity equation of excess minority carrier in the base, we have established the expressions of the photocurrent density, the recombination velocity on the back side of the base Sb, and the photovoltage. The photocurrent density and the photovoltage are plotted as a function of Sf, called, minority carrier recombination velocity at the junction surface, for different temperature values. The illuminated I-V characteristic curves of the solar cell are then derived. To better characterize the solar cell, we study the electrical power delivered by the base of the solar cell to the external charge circuit as either junction surface recombination velocity or photovoltage dependent. From the output power versus junction surface recombination velocity Sf, we have deduced an eigenvalue equation depending on junction recombination velocity. This equation allows to obtain the maximum junction recombination velocity Sfmax corresponding to the maximum power delivered by the photovoltaic generator, throughout simulink model. Finally, we deduce the conversion efficiency of the solar cell.

关键词： Silicon Solar Cell-Junction Surface Recombination Velocity-Maximum Power

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