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Tsinghua Science and Technology 2021年第4期26卷 496-504页

作者： Baoyu Liu Xiaoping Zou Dan Chen Taoran Liu Yuhua Zuo Jun Zheng Zhi Liu buwen cheng Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for SensorMOE Key Laboratory for Modern Measurement and Control TechnologyBeijing Information Science and Technology UniversityBeijing 100101China the State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In recent years,Perovskite Light-Emitting Diodes(PeLEDs)have received considerable attention in ***,with the development of PeLEDs,commercial applications of full-color PeLED technology are largely limited by the progress of blue-emitting devices,due to the uncontrollably accurate composition,unstable properties,and low *** this article,we add Cesium chloride(CsCl)to the quasi-two-dimensional(quasi-2D)perovskite precursor solution and achieve the relatively blue shifts of PeLED emission peak by introducing chloride ions for photoluminescence(PL)and electroluminescence(EL).We also found that the introduction of chlorine ions can make quasi-2D perovskite films thinner with smoother surface of 0.408 *** is interesting that the EL peaks and intensities of PeLED are adjustable under different driving voltages in high concentration chlorine-added perovskite devices,and different processes of photo-excited,photo-quenched,and photo-excited occur sequentially with the increasing driving *** work provides a path for demonstrating full-color screens in the future.

关键词： Perovskite Light-Emitting Diodes(PeLEDs) quasi-two-dimensional(quasi-2D) chloride ions blue shifts

Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers

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Tsinghua Science and Technology 2023年第1期28卷 131-140页

作者： Dan Chen Taoran Liu Yuhua Zuo Chuanbo Li Jun Zheng Zhi Liu Baoyu Liu buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Science Minzu University of ChinaBeijing 100081China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for SensorMOE Key Laboratory for Modern Measurement and Control Technologyand Beijing Information Science and Technology UniversityBeijing 100101China

Green Perovskite Light-Emitting Diodes(PeLEDs)have attracted wide attention for full spectrum ***,the inferior film morphology and luminescence property of quasi-two-dimensional(quasi-2D)perovskite layers limit the photoelectric property of the *** this paper,the effect of strontium(Sr)doped in quasi-2D perovskite layers is investigated to obtain a high-quality active *** morphologies and optical properties of Sr-doped quasi-2D perovskite films with different concentrations are *** the addition of strontium,more low-dimensional-layer perovskite phases(n D 2 and n D 3)appear in quasi-2D perovskite films,providing efficient intraband carrier funneling pathway and facilitating radiative *** photoluminescence(PL)peak intensity of optimized Sr-doped quasi-2D perovskite layers increases 50%compared with the non-strontium ***,green PeLEDs based on a Sr-doped quasi-2D perovskite layer reach a maximum luminance(Lmax)of 2943.77 cd/m^(2),which is three times of the control *** electroluminescence(EL)peaks of Maximum External Quantum Efficiency(MEQE)and Lmax of Sr-doped PeLEDs exhibite a slight shift,indicating the excellent stability and performance of Sr-doped *** optimized device can continuously operate for 360 s at MEQE driving voltage,resulting in a half-lifetime of60 s,which is 3-fold greater than that of the control PeLEDs.

关键词： Perovskite Light-Emitting Diodes(PeLED) Sr-doped brightness improved lifetime increased

Effect of the silicon substrate structure on chip spiral inductor

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Frontiers of Electrical and Electronic Engineering in China 2008年第1期3卷 110-115页

作者： Chunlai XUE Fei YAO buwen cheng Qiming WANG State Key Laboratory of Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this paper,the effect of the substrate structure on the performance of the spiral inductor is investigated by the 3-D electromagnetic simulator,Ansoft high frequency structure simulator(HFSS).With variations in the substrate structure including substrate conductivity,permittivity and thickness of the dielectric layer,the performance of the inductors has been analyzed in *** simulation results and analyses indicate that the performance of the spiral inductor can be mostly improved by lowering the conductivity of the substrate,increasing the thickness of the dielectric layer and using the low K dielectric *** the mean time,some guidelines or“design rules”are summarized by the results of this study.

关键词： silicon spiral inductor quality factor substrate structure

Research progress of Ge on insulator grown by rapid melting growth

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Journal of Semiconductors 2018年第6期39卷 66-75页

作者： Zhi Liu Juanjuan Wen Chuanbo Li Chunlai Xue buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Optoelectronic Technology University of Chinese Academy of SciencesBeijing 100049China

Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor （CMOS） processes. Based on Ge, Ge on insulator （GOI） not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth （RMG） has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status. Finally, GOI based applications including high performance metal-oxide-semiconductor field effect transistors （MOSFETs） and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits.

关键词： rapid melting growth Ge on insulator MOSFET photodetectors

Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

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Photonics Research 2020年第6期8卷 899-903页

作者： LINZHI PENG Xu LI ZHI LIU XIANGQUAN LIU JUN ZHENG CHUNLAI XUE YUHUA ZUO buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeiing 100049China Beijing Academy of Quantum Information Sciences Bejing 100193China

A horizontal p-i-n ridge waveguide emitter on a slion(100)substrate with a Gen,g1Sno.c9/Ge multi quantum-well(MQW)active layer was fabricated by molecular beam *** device structure was designed to reduce light absorption of metal electrodes and improve injection ***(EL)at a wavelength of 2160 nm was observed at room *** calculations indicate that the emission peak corresponds well to the direct bandgap transition(nr-mHr).The light output power was about 2.0μW with an injection current density of 200 kA/cm^*** results show that the horizontal GeSn/Ge MQW ridge waveguide emiters have great pros-pects for group-IV light sources.

关键词： waveguide temperature. GeSn

Interface Modification of TiO_(2)Electron Transport Layer with PbCl_(2)for Perovskiote Solar Cells with Carbon Electrode

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Tsinghua Science and Technology 2022年第4期27卷 741-750页

作者： Abolfazl Amraeinia Yuhua Zuo Jun Zheng Zhi Liu Guangze Zhang Liping Luo buwen cheng Xiaoping Zou Chunbo Li Key Laboratory on Integrated Optoelectronics Institute of SemiconductorChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for SensorMOE Key Laboratory for Modern Measurement and Control TechnologyBeijing Information Science and Technology UniversityBeijing 100101China School of Science Minzu University of ChinaBeijing 100081China

Perovskite Solar Cells(PSCs)have attracted considerable attention because of their unique features and high ***,the stability of perovskite solar cells remains to be *** this study,we modified the TiO_(2)Electron Transport Layer(ETL)interface with PbCl_(2).The efficiency of the perovskite solar cells with carbon electrodes increased from 11.28%to 13.34%,and their stability obviously *** addition of PbCl_(2)had no effect on the morphology,crystal structure,and absorption property of the perovskite absorber ***,it affected the band energy level alignment of the solar cells and accelerated the electron extraction and transfer at the interface between the perovskite layer and the ETL,thus enhancing the overall photovoltaic *** interfacial modification of ETL with PbCl_(2)is a promising way for the potential commercialization of low-cost carbon electrode-based perovskite solar cells.

关键词： Perovskite Solar Cell(PSC) Electron Transport Layer(ETL) electron and hole recombination modification stability

30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

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Photonics Research 2021年第4期9卷 494-500页

作者： Xiuli Li Linzhi Peng Zhi Liu Zhiqi Zhou Jun Zheng Chunlai Xue Yuhua Zuo Baile Chen buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Information Science and Technology ShanghaiTech UniversityShanghai 201210China Beijing Academy of Quantum Information Sciences Beijing 100193China

We report the demonstration of a normal-incidence p-i-n germanium-tin(Ge_(0.951)Sn_(0.049))photodetector on silicon-on-insulator substrate for 2μm wavelength *** DC and RF characteristics of the devices have been characterized.A dark current density under−1 V bias of approximately 125 mA/cm^(2) is achieved at room temperature,and the optical responsivity of 14 mA/W is realized for illumination wavelength of 2μm under−1 V reverse *** addition,a 3 dB bandwidth(f_(3dB))of around 30 GHz is achieved at−3 V,which is the highest reported value among all group III–V and group IV photodetectors working in the 2μm wavelength *** work illustrates that a GeSn photodetector has great prospects in 2μm wavelength optical communication.

关键词： 2μm GeSn SOI

Remembering John Bardeen: inventor of transistor

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Journal of Semiconductors 2019年第2期40卷 9-10页

作者： M.A.Rafiq Chuanbo Li buwen cheng Department of Physics and Applied Mathematics Pakistan Institute of Engineering and Applied Sciences (PIEAS) State Key Laboratory on Integrated optoelectronics Institute of Semiconductors Chinese Academy of Sciences School of Science Minzu University of China

Transistor's invention revolutionized global society by spawning electronics industry. John Bardeen is among one of the inventors of transistor. He was a genius and one of the most influential semiconductor Physicist ... 详细信息

关键词： Remembering John Bardeen inventor of transistor

Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

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Photonics Research 2022年第7期10卷 1567-1574页

作者： XIANGQUAN LIU JUN ZHENG CHAOQUN NIU TAORAN LIU QINXING HUANG MINGMING LI DIANDIAN ZHANG YAQING PANG ZHI LIU YUHUA ZUO buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

GeSn detectors have attracted a lot of attention for mid-infrared Si photonics,due to their compatibility with Si complementary metal oxide semiconductor *** GeSn bandgap can be affected by Sn composition and strain,which determines the working wavelength range of *** the Sn content gradient GeSn layer structure,the strain of GeSn can be controlled from fully strained to completely *** this work,the strain evolution of GeSn alloys was investigated,and the effectiveness of gradually increasing Sn composition for the growth of high-Sn-content GeSn alloys was *** GeSn thick films with Sn composition up to 16.3%were grown,and GeSn photodetectors were *** 77 K,the photodetectors showed a cutoff wavelength up to 4.2μm and a peak responsivity of 0.35 A/W under 1 V at 2.53μ*** results indicate that GeSn alloys grown on a Sn content gradient GeSn structure have promising application in mid-infrared detection.

关键词： content gradient complementary

Recent progress in GeSn growth and GeSn-based photonic devices

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Journal of Semiconductors 2018年第6期39卷 76-81页

作者： Jun Zheng Zhi Liu Chunlai Xue Chuanbo Li Yuhua Zuo buwen cheng Qiming Wang Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photode- tectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the mono- lithic integration of Si photonic circuits by the complementary metal-oxide-semiconductor （CMOS） technology.

关键词： GeSn material growth Si photonics optoelectronic integration