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Axillary Sentinel Lymph Node Biopsy for Breast Cancer and Melanoma Patients after Previous Axillary Surgery: A Systematic Review

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Journal of Cancer Therapy 2013年第9期4卷 1395-1402页

作者： Maurice Matter Sebastien Romy ariane boubaker Olivier Michielin Nicolas Demartines Department of Nuclear Medicine Centre Hospitalier Universitaire Vaudois and University of Lausanne Lausanne Switzerland Department of Oncology Melanoma Outpatient Clinic Centre Hospitalier Universitaire Vaudois and University of Lausanne Lausanne Switzerland Department of Visceral Surgery Centre Hospitalier Universitaire Vaudois and University of Lausanne Lausanne Switzerland

Objective: Sentinel lymph node biopsy (SLNB) is a validated staging technique for breast carcinoma. Some women are exposed to have a second SLNB due to breast cancer recurrence or a second neoplasia (breast or other). Due to modified anatomy, it has been claimed that previous axillary surgery represents a contra-indication to SLNB. Our objective was to analyse the literature to assess if a second SLNB is to be recommended or not. Methods: For the present study, we performed a review of all published data during the last 10 years on patients with previous axilla surgery and second SLNB. Results: Our analysis shows that second SLNB is feasible in 70%. Extra-axillary SNs rate (31%) was higher after radical lymph node dissection (ALND) (60% - 84%) than after SLNB alone (14% - 65%). Follow-up and complementary ALND following negative and positive second SLNB shows that it is a reliable procedure. Conclusion: The review of literature confirms that SLNB is feasible after previous axillary dissection. Triple technique for SN mapping is the best examination to highlight modified lymphatic anatomy and shows definitively where SLNB must be performed. Surgery may be more demanding as patients may have more frequently extra-axillary SN only, like internal mammary nodes. ALND can be avoided when second SLNB harvests negative SNs. These conclusions should however be taken with caution because of the heterogeneity of publications regarding SLNB and surgical technique.

关键词： Breast Neoplasms Melanoma Sentinel Lymph Node Biopsy Dissection Lymphatic Vessels Surgery Lymphatic Anatomy

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Monte Carlo method for determining the response of portable gamma detector for in situ measurement of terrestrial gamma ray field

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Nuclear Science and Techniques 2016年第4期27卷 28-37页

作者： boubaker Askri Department of Physics College of Science Qassim University Research Unit of Nuclear Physics and High Energy Faculty of Sciences of Tunis University of Tunis El Manar

A Monte Carlo method to study the response of portable detector to terrestrial gamma ray is proposed. This method is based on two-stage Monte Carlo ***, the probability distributions of the phase space coordinates of the events that are most likely to be detected are reconstructed at the phase space shell level. The phase space shell is a closed surface enclosing the detector. The detector response to events originating from the phase space shell is then studied. The full absorption spectra as well as the partial absorption spectra are obtained for natural radionuclides uniformly distributed in the ground. For validation, this method is applied to a Hp Ge portable detector previously studied. The previous study is based on a semiempirical model. Good agreement is achieved when we compare the full-energy peak efficiencies and the total in situ spectra obtained by the two methods. As an application, the effective depth of the activity of the^(137) Cs artificial radionuclide in the soil is determined from the low-energy part of the total in situ spectrum.

关键词：伽玛探测器蒙特卡洛方法便携式地面相空间重构测量线场测定

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Improved Dijkstra Algorithm for Mobile Robot Path Planning and Obstacle Avoidance

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Computers, Materials & Continua 2022年第9期72卷 5939-5954页

作者： Shaher Alshammrei Sahbi boubaker Lioua Kolsi Department of Mechanical Engineering College of EngineeringUniversity of Ha’ilHa’il2440Saudi Arabia Department of Computer and Network Engineering College of Computer Science and EngineeringUniversity of JeddahJeddah21959Saudi Arabia Research Laboratory of Metrology and Energy Systems National Engineering SchoolEnergy Engineering DepartmentUniversity of MonastirMonastir5000Tunisia

Optimal path planning avoiding obstacles is among the most attractive applications of mobile robots(MRs)in both research and *** this paper,an optimal collision-free algorithm is designed and implemented practically based on an improved Dijkstra *** achieve this research objectives,first,the MR obstacle-free environment is modeled as a diagraph including nodes,edges and ***,Dijkstra algorithm is used offline to generate the shortest path driving the MR from a starting point to a target *** its movement,the robot should follow the previously obtained path and stop at each node to test if there is an obstacle between the current node and the immediately following *** this aim,the MR was equipped with an ultrasonic sensor used as obstacle *** an obstacle is found,the MR updates its diagraph by excluding the corresponding ***,Dijkstra algorithm runs on the modified *** procedure is repeated until reaching the target *** verify the efficiency of the proposed approach,a simulation was carried out on a hand-made MR and an environment including 9 nodes,19 edges and 2 *** obtained optimal path avoiding obstacles has been transferred into motion control and implemented practically using line tracking *** study has shown that the improved Dijkstra algorithm can efficiently solve optimal path planning in environments including obstacles and that STEAM-based MRs are efficient cost-effective tools to practically implement the designed algorithm.

关键词： Mobile robot(MR) STEAM path planning obstacle avoidance improved dijkstra algorithm

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The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method

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Journal of Semiconductors 2013年第9期34卷 21-25页

作者： Achour Rahal Said Benramache boubaker Benhaoua VTRS Laboratory Institute of TechnologyUniversity of El-oued 39000Algeria Physics Laboratory Institute of TechnologyUniversity of El-oued 39000Algeria Material Sciences Laboratory Faculty of ScienceUniversity of Biskra 07000Algeria

This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin （Ⅱ） chloride dehydrate, ammonium fluoride dehydrate, ethanol and HC1 were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2：F thin films were deposited at a 350 ℃ pending time （5, 15, 60 and 90 s）. The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2：F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 （Ω.cm）-1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2：F thin films deposited by ultrasonic spray was reported.

关键词： SnO2 fluoride thin film film thickness TCO ultrasonic spray technique

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Method for converting in-situ gamma ray spectra of a portable Ge detector to an incident photon flux energy distribution based on Monte Carlo simulation

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Nuclear Science and Techniques 2008年第6期19卷 358-364页

作者： boubaker ASKRI Adel TRABELSI Brahim BACCARI Unité de Physique Nucléaire et des Hautes énergies Faculté des Sciences de Tunis2092 TunisTunisia Centre National de Sciences et de Technologies Nucléaires Sidi ThabetTunisia

A matrix stripping method for the conversion of in-situ gamma ray spectrum, obtained with portable Ge detector, to photon flux energy distribution is proposed. The detector response is fully described by its stripping matrix and full absorption efficiency curve. A charge collection efficiency function is introduced in the simulation to take into account the existence of a transition zone of increasing charge collection after the inactive Ge layer. Good agreement is obtained between simulated and experimental full absorption efficiencies. The characteristic stripping matrix is determined by Monte Carlo simulation for different incident photon energies using the Geant4 toolkit system. The photon flux energy distribution is deduced by stripping the measured spectrum of the partial absorption and cosmic ray events and then applying the full absorption efficiency curve. The stripping method is applied to a measured in-situ spectrum. The value of the absorbed dose rate in air deduced from the corresponding flux energy distribution agrees well with the value measured directly in-situ.

关键词：蒙特卡罗模拟锗探测器伽马射线拆模仿式

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Preparation of n-type semiconductor SnO_2 thin films

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Journal of Semiconductors 2013年第8期34卷 25-28页

We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopant source,solvent and stabilizer,*** SnO_2：F thin films were deposited at 350℃and a pending time of 60 and 90 *** as-grown films exhibit a hexagonal wurtzite structure and have（101） *** G = 31.82 nm value of the grain size is attained from SnO_2：F film grown at 90 s,and the transmittance is greater than 80%in the visible *** optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58（Ω·cm）^（-1）,with the maximum activation energy value of the films being found to measure 22.85 meV,indicating that the films exhibit an n-type semiconducting nature.

关键词： SnO_2:F thin film TCO ultrasonic spray technique

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Effect of substrate temperature on the stability of transparent conducting cobalt doped ZnO thin films

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Journal of Semiconductors 2012年第9期33卷 18-21页

作者： Said Benramache boubaker Benhaoua Foued Chabane Material Sciences Laboratory Faculty of ScienceUniversity of Biskra 07000Algeria Physics Laboratory Institute of TechnologyUniversity of El-oued 39000Algeria Mechanics Department Faculty of TechnologyUniversity of Biskra 07000Algeria

Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong （002） preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer （UV-vis） of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 （Ω·cm）^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.

关键词： ZnO:Co films transparent conducting films ultrasonic spray deposition substrate temperature band gap energy

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Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique

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Journal of Semiconductors 2015年第1期36卷 23-27页

作者： Yacine Aoun boubaker Benhaoua Brahim Gasmi Said Benramache Mechanical Department Faculty of Technology University of Biskra Biskra 07000 Algeria VTRS Laboratory Institute of Technology University of El-Oued El-Oued 39000 Algeria Laboratoire de Physique des Couches Minces et Application University of Biskra Biskra 07000 Algeria Material Sciences Department Faculty of Science University of Biskra Biskra 07000 Algeria

Zinc oxide（ZnO） thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 m L of deposition rate, the ZnO thin films were deposited at two different temperatures： 300 and 350℃. The substrates were heated using the solar cells *** substrate was R217102 glass, whose size was 30×17.5×1 mm^3. The films exhibit a hexagonal wurtzite structure with a strong（002） preferred orientation. The higher value of crystallite size is attained for sprayed films at 350℃, which is probably due to an improvement of the crystallinity of the films at this point. The average transmittance of obtain films is about 90%–95%, as measured by a UV–vis analyzer. The band gap energy varies from 3.265 to 3.294 e V for the deposited Zn O thin film at 300 and 350℃, respectively. The electrical resistivity measured of our films are in the order 0.36 Ω·cm.

关键词： ZnO thin films substrate temperature spray pyrolysis technique

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Influence of growth time on crystalline structure,conductivity and optical properties of ZnO thin films

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Journal of Semiconductors 2013年第2期34卷 11-14页

作者： Said Benramache Foued Chabane boubaker Benhaoua Fatima Z.Lemmadi Material Sciences Laboratory Faculty of ScienceUniversity of Biskra Mechanical Engineering Faculty of TechnologyUniversity of Biskra Physics Laboratory

This paper examines the growth of ZnO thin films on glass substrate at 350 ℃ using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are （002） oriented. The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 Ω.cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 ℃ has been reported.

关键词： ZnO thin film growth time ultrasonic spray technique

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Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique

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Journal of Semiconductors 2013年第7期34卷 26-30页

作者： Abdelouahab Gahtar Said Benramache boubaker Benhaoua Foued Chabane VTRS Laboratory Institute of TechnologyUniversity of El-oued 39000Algeria Material Sciences Department Faculty of ScienceUniversity of Biskra 07000Algeria Mechanics Department Faculty of TechnologyUniversity of BiskraBiskra 07000Algeria

Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray *** of preparation have been optimized to get good quality.A set of aluminum（Al） doped ZnO（between 0 and 5 wt%） thin films were grown on glass substrate at 350℃.Nanocrystalline films with a hexagonal wurtzite structure show a strong（002） preferred *** maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%.All the films have low absorbance in the visible region,thus the films are transparent in the visible region;the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%.The electrical conductivity of the films increased from 7.5 to 15.2（Ω·cm）^（-1）.So the best results are achieved in Al doped ZnO film with 3 wt%.

关键词： ZnO:A1 thin films TCO ultrasonic spray technique

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