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Acid-induced topological morphology modulation of graphitic carbon nitride homojunctions as advanced metal-free catalysts for OER and pollutant degradation

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Journal of Materials Science & Technology 2021年第27期86卷 210-218页

作者： Hua-Wei Zhang Yi-Xin Lu Bo Li Gui-Fang Huang Fan Zeng Yuan-Yuan Li anlian pan Yi-Feng Chai Wei-Qing Huang Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha410082China College of Materials Science and Engineering Hunan UniversityChangshaHunan410082China School of Physics and Electronics Science Hunan University of Science and TechnologyXiangtan411201China

Topological morphology that dominates the surface electronic properties of nanostructures plays a key role in producing desired materials for versatile functions and applications in many fields,but its modulation for specific functions remains a big ***,we report an acid-induced method to prepare S-doped graphitic carbon nitride/graphitic carbon nitride(S-CN/CN)homojunction by simply pyrolyzing a supramolecular precursor synthesized from melamine and H_(2)SO_(4).The topological morphology and electronic structure of CN homojunction can be easily adjusted only by changing the ratio of raw ***,the topological morphology of S-CN/CN homojunction can be further adjusted from hollow cocoon to 2D nanosheets by changing the annealing *** optimized S-CN/CN homojunction shows highly efficient in charge transfer and separation and exhibits superior OER activity and high ability to degrade organic ***,S-CN/CN nanosheets only demand low overpotential of301 m V to drive a current density of 10 m Acm^(-2)in 1 M KOH media,and the corresponding Tafel slope is only 57.71 m V/dec,which is superior to the most advanced precious metal Ir O_(2)***,under visible light irradiation,its photodegradation kinetic rate of Rh B is 2.38,which is 47.6 times higher than that of bulk *** work provides useful guidance for designing and developing efficient multifunctional metal-free catalysts.

关键词： Topological morphology Acid-induced Molecular self-assembly S-CN/CN homojunction OER

Controlled vapor growth of 2D magnetic Cr_(2)Se_(3)and its magnetic proximity effect in heterostructures

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Chinese Physics B 2021年第9期30卷 25-30页

作者： Danliang Zhang Chen Yi Cuihuan Ge Weining Shu Bo Li Xidong Duan anlian pan Xiao Wang School of Physics and Electronics Hunan UniversityChangsha 410082China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China

Two-dimensional(2D)magnetic materials have aroused tremendous interest due to the 2D confinement of magnetism and potential applications in spintronic and valleytronic ***,most of the currently 2D magnetic materials are achieved by the exfoliation from their bulks,of which the thickness and domain size are difficult to control,limiting the practical device ***,we demonstrate the realization of thickness-tunable rhombohedral Cr_(2)Se_(3)nanosheets on different substrates via the chemical vapor deposition *** magnetic transition temperature at about 75 K is ***,van der Waals heterostructures consisting of Cr_(2)Se_(3)nanosheets and monolayer WS2 are *** observe the magnetic proximity effect in the heterostructures,which manifests the manipulation of the valley polarization in monolayer *** work contributes to the vapor growth and applications of 2D magnetic materials.

关键词： Cr_(2)Se_(3) magnetic proximity effect heterostructures

Epitaxial van der Waals contacts for low schottky barrier MoS_(2) field effect transistors

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Nano Research 2023年第9期16卷 11832-11838页

作者： Huawei Liu Lizhen Fang Xiaoli Zhu Chenguang Zhu Xingxia Sun Gengzhao Xu Biyuan Zheng Ying Liu Ziyu Luo Hui Wang Chengdong Yao Dong Li anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Institute of Optoelectronic Integration Hunan UniversityChangsha 410082China Suzhou Institute of Nano-tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

Small contact resistance and low Schottky barrier height(SBH)are the keys to energy-efficient electronics and ***-dimensional(2D)semiconductors-based field effect transistors(FETs),holding great promise for next-generation information circuits,still suffer from poor contact quality at the metal–semiconductor junction interface,which severely hinders their further ***,a novel contact strategy is proposed,where Bi_(2)Te_(3)nanosheets with high conductivity were in-situ epitaxially grown on MoS_(2)as van der Waals contacts,which can effectively avoid the damage to MoS_(2)caused during the device manufacturing process,leading to a high-performance MoS_(2)***,the small work function difference between Bi_(2)Te_(3)and MoS_(2)(Bi_(2)Te_(3):4.31 eV,MoS_(2):4.37 eV,measured by Kelvin probe force microscopy(KPFM)),enables small band bending and Ohmic contact at the junction *** characterizations indicate that the MoS_(2)FET device with Bi_(2)Te_(3)contacts possesses a high current on/off ratio(5×107),large effective carrier mobility(90 cm^(2)/(V·s)),and low flat-band SBH(60 meV),which is favorable as compared with MoS_(2)FET with traditional Cr/Au electrodes contacts,and superior to the vast majority of the reported chemical vapor deposition(CVD)MoS_(2)-based FET *** demonstration of epitaxial van der Waals Bi_(2)Te_(3)contacts will facilitate the application of 2D MoS_(2)nanosheet in next-generation low-power consumption electronics and optoelectronics.

关键词： heterojunction van der Waals epitaxial mobility Schottky barrier transistors

Single-Crystalline In Ga As Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

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Nano-Micro Letters 2016年第1期8卷 29-35页

作者： Huang Tan Chao Fan Liang Ma Xuehong Zhang Peng Fan Yankun Yang Wei Hu Hong Zhou Xiujuan Zhuang Xiaoli Zhu anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province School of Physics and Electronics and State Key Laboratory of Chemo/Biosensing and ChemometricsHunan University

In Ga As is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal In Ga As nanowires were synthesized by a chemical vapor deposition *** measurements indicate the In Ga As nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown In Ga As nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5×10~3 AW^(-1) and external quantum efficiency of 5.04×10~5%. This photodetector may have potential applications in integrated optoelectronic devices and systems.

关键词： InGaAs Nanowire Near-infrared Photodetector

Synthesis and Diameter-dependent Thermal Conductivity of InAs Nanowires

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Nano-Micro Letters 2014年第4期6卷 301-306页

作者： Pinyun Ren Xiaoli Zhu Jinyun Han Jinyou Xu Liang Ma Honglai Li Xiujuan Zhuang Hong Zhou Qinglin Zhang Minggang Xia anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and Chemometrics College of Physics and Microelectronics Science Hunan University Condensed Matter Physics Laboratory Center on Experimental Physics School of Science Xi’an Jiaotong University

In this work, we synthesized high-quality In As nanowires by a convenient chemical vapor deposition method,and developed a simple laser heating method to measure the thermal conductivity of a single In As nanowire in air. During the measurement, a focused laser was used to heat one end of a freely suspended nanowire, with its other end embedded into a carbon conductive adhesive. In order to obtain the thermal conductivity of In As nanowires, the heat loss in the heat transfer process was estimated, which includes the heat loss through air conduction, the heat convection, and the radiation loss. The absorption ratio of the laser power in the In As nanowire was calculated. The result shows that the thermal conductivity of In As nanowires monotonically increases from 6.4 W m-1K-1to 10.5 W m-1K-1with diameters increasing from 100 nm to 190 nm, which is ascribed to the enhanced phonon-boundary scattering.

关键词： InAs nanowires Chemical vapor deposition Thermal conductivity Phonon-boundary scattering

Polarized photoluminescence spectroscopy in WS_(2),WSe_(2) atomic layers and heterostructures by cylindrical vector beams

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Chinese Physics B 2021年第8期30卷 42-48页

作者： Lijun Wu Cuihuan Ge Kai Braun Mai He Siman Liu Qingjun Tong Xiao Wang anlian pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province School of Physics and ElectronicsHunan UniversityChangshaHunan 410082China Institute of Physical and Theoretical Chemistry and LISA+ University of TubingenAuf der Morgenstelle 1872076TubingenGermany College of Materials Science and Engineering Hunan UniversityChangshaHunan 410082China

Due to the large exciton binding energy,two-dimensional(2D)transition metal dichalcogenides(TMDCs)provide an ideal platform for studying excitonic states and related photonics and *** states lead to distinct light-matter interactions which are of great importance for device *** this work,we study polarized photoluminescence spectra from intralayer exciton and indirect exciton in WS_(2) and WSe_(2) atomic layers,and interlayer exciton in WS_(2)/WSe_(2) heterostructures by radially and azimuthally polarized cylindrical vector laser *** demonstrated the same in-plane and out-of-plane polarization behavior from the intralayer and indirect ***,with these two laser modes,we obtained interlayer exciton in WS_(2)/WSe_(2) heterostructures with stronger out-of-plane polarization,due to the formation of vertical electric dipole moment.

关键词： two-dimensional transition metal dichalcogenides optical polarization interlayer exciton cylindrical vector beams

Bandgap-Engineering Based Single Semiconductor Nanostructures:From 1D to 2D systems

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Bandgap-Engineering Based Single Semiconductor Nanostructure...

Formation and Optical Properties of ZnO:ZnFe_(2)O_(4) Superlattice Microwires

中国真空学会2014学术年会

作者： anlian pan School of Physics and Microelectronics Science Hunan University

Band gaps are one of the most important parameters of semiconductor materials for their optoelectronic applications since they determine the spectral features of absorptions and emission *** to the limited band gaps of natural semiconductors,alloying semiconductors of different band gaps has long been one of the standard methods of achieving semiconductors with new band *** this talk,I will report our recent

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Nano Research 2010年第5期3卷 326-338页

作者： Yun Li Guozhang Dai Chunjiao Zhou Qinglin Zhang Qiang Wan Limin Fu Jianping Zhang Ruibin Liu Chuanbao Cao anlian pan Yunhong Zhang Bingsuo Zou State Key Laboratory of Chemo/biosensing and Chemometrics(CBSC) Hunan UniversityChangsha 410082China School of Materials Science and Engineering(MSE) Beijing Institute of TechnologyBeijing 100081China Chemistry Department Renmin University of ChinaBeijing 100872China

Pure ZnO hexagonal microwires and Fe(Ⅲ)-doped ZnO microwires(MWs)with a novel rectangular cross section were synthesized in a confined chamber by a convenient one-step thermal evaporation *** oriented attachment mechanism is consistent with a vapor-solid growth ***(PL)and Raman spectroscopy of the Fe(Ⅲ)-doped ZnO MWs and in situ spectral mappings indicate a quasi-periodic distribution of Fe(Ⅲ)along a one-dimensional(1-D)superlattice ZnO:ZnFe_(2)O_(4) wire,while PL mapping shows the presence of optical multicavities and related *** PL spectra at room temperature show weak near-edge doublets(376 nm and 383 nm)and a broad band(450-650 nm)composed of strong discrete lines,due to a 1-D photonic crystal *** a 1-D coupled optical cavity material may find many applications in future photonic and spintronic devices.

关键词： ZnO superlattice microwire micro-photoluminescence micro-Raman spectroscopy

Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING anlian pan Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration