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Perfect short-range ordered alloy with line-compound-like properties in the ZnSnN_(2):ZnO system

npj Computational Materials 2020年第1期6卷 1132-1137页

作者： Jie Pan Jacob J.Cordell Garritt J.Tucker andriy zakutayev Adele C.Tamboli Stephan Lany Materials Science Center National Renewable Energy LaboratoryGoldenCO 80401USA Department of Mechanical Engineering Colorado School of MinesGoldenCO 80401USA

We present a new solid-state material phase which is a disordered solid solution but offers many ordered line-compound features.The emergent physical phenomena are rooted in the perfect short-range order which conserves the local octet rule.We model the dual-sublattice-mixed semiconductor alloy (ZnSnN_(2))_(1-x)(ZnO)_(2x) using first-principles calculations,Monte-Carlo simulations with a model Hamiltonian,and an extension of the regular solution model by incorporating short-range order.

关键词： alloy ordered compound

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High-throughput fabrication and semi-automated characterization of oxide thin film transistors

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Chinese Physics B 2020年第1期29卷 82-88页

作者：韩炎兵 Sage Bauers 张群 andriy zakutayev Materials Science Center National Renewable Energy LaboratoryGolden CO 80401USA Department of Materials Science Fudan UniversityShanghai 200433China School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450052China

High throughput experimental methods are known to accelerate the rate of research,development,and deployment of electronic materials.For example,thin films with lateral gradients in composition,thickness,or other parameters have been used alongside spatially-resolved characterization to assess how various physical factors affect the material properties under varying measurement conditions.Similarly,multi-layer electronic devices that contain such graded thin films as one or more of their layers can also be characterized spatially in order to optimize the performance.In this work,we apply these high throughput experimental methods to thin film transistors(TFTs),demonstrating combinatorial channel layer growth,device fabrication,and semi-automated characterization using sputtered oxide TFTs as a case study.We show that both extrinsic and intrinsic types of device gradients can be generated in a TFT library,such as channel thickness and length,channel cation compositions,and oxygen atmosphere during deposition.We also present a semi-automated method to measure the 44 devices fabricated on a 50 mm×50 mm substrate that can help to identify properly functioning TFTs in the library and finish the measurement in a short time.Finally,we propose a fully automated characterization system for similar TFT libraries,which can be coupled with high throughput data analysis.These results demonstrate that high throughput methods can accelerate the investigation of TFTs and other electronic devices.

关键词： combinatorial sputtering indium zinc oxide(IZO)thin film transistor(TFT) channel gradient oxygen content

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