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Uniformity of Plasma Density and Film Thickness of Coatings Deposited Inside a Cylindrical Tribe by Radio Frequency Sputtering

中国神经科学学会第九届全国学术会议暨第五次会员代表大会

作者： Anthony H.k.Tsang amy k.y.fu Wing-yu fu kenny k.Chung Nancy y.Ip Division of Life Science Molecular Neuroscience Center and State Key Laboratory of Molecular NeuroscienceThe Hong Kong University of Science and TechnologyClear Water Bay

＜正＞Objective Precise regulation of cyclin-dependent kinase 5（Cdk5）,a member of the cyclin-dependent kinase family,is critical for the proper neuronal development and ***5 is activated through its association with the neuron-specific activator p35 or ***,how its kinase activity is regulated in neurons is not well *** the present study,we investigate whether Cdk5 is regulated by the S-nitrosylation,a post-translational modification of protein,and how the S-nitrosylation of Cdk5 modulates its kinase activity and functions during neuronal *** The kinase activity of Cdk5 upon S-nitrosylation was measured using in vitro kinase *** potential physiological role of S-nitrosylation of Cdk5 in neuronal development was studied by overexpressing Cdk5 or its C83A mutant in hippocampal *** change in the neuronal morphology was examined using confocal ***（1）Cdk5 is S-nitrosylated both in vitro and in vivo.（2）S-nitrosylation of Cdk5 inhibits its kinase activity.（3）Inhibition of the S-nitrosylation of Cdk5 enhances dendrite growth in neurons. Conclusion S-nitrosylation of Cdk5 regulates its activity and dendritic development.

关键词： cyclin dependent kinase 5 p35 dendrite nitric oxide S-nitrosylation

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Plasma Science and Technology 2008年第5期10卷 560-564页

作者：崔江涛田修波杨士勤胡涛 Ricky k.y.fu Paul k.CHU School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China Department of Physics and Material Science City University of Hong KongTat Chee AvenueKowloonHong KongChina

Plasma surface modification of the inner wall of a slender tube is quite difficult to achieve using conventional means. In the work described here, an inner coaxial radio frequency （RF） copper electrode is utilized to produce the plasma and also acts as the sputtered target to deposit copper films in a tube. The influence of RF power, gas pressure, and bias voltage on the distribution of plasma density and the uniformity of film thickness is investigated. The experimental results show that the plasma density is higher at the two ends and lower in the middle of the tube. A higher RF power and pressure as well as larger tube bias lead to a higher plasma density. Changes in the discharge parameter only affect the plasma density uniformity slightly. The variation in the film thickness is consistent with that of the plasma density along the tube axis for different RF power and pressure. Although the plasma density increases with higher tube biases, there is an optimal bias to obtain the highest deposition rate. It can be attributed to the reduction in self-sputtering of the copper electrode and re-sputtering effects of the deposited film at higher tube biases.

关键词： plasma distribution inner surface radio-frequency plasma

Advancements and Challenges in Organic–Inorganic Composite Solid Electrolytes for All‑Solid‑State Lithium Batteries

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Nano-Micro Letters 2025年第1期17卷 46-97页

作者： Xueyan Zhang Shichao Cheng Chuankai fu Geping yin Liguang Wang yongmin Wu Hua Huo State key Laboratory of Space Power‑Sources School of Chemistry and Chemical EngineeringHarbin Institute of TechnologyHarbin 150001People’s Republic of China College of Chemical and Biological Engineering Zhejiang UniversityHangzhou 310058People’s Republic of China State key Laboratory of Space Power-Sources 2965 Dongchuan RoadMinhang DistrictShanghai 200240People’s Republic of China

To address the limitations of contemporary lithium-ion batteries,particularly their low energy density and safety concerns,all-solid-state lithium batteries equipped with solid-state electrolytes have been identified as an up-and-coming *** the various SEs,organic–inorganic composite solid electrolytes(OICSEs)that combine the advantages of both polymer and inorganic materials demonstrate promising potential for large-scale ***,OICSEs still face many challenges in practical applications,such as low ionic conductivity and poor interfacial stability,which severely limit their *** review provides a comprehensive overview of recent research advancements in ***,the influence of inorganic fillers on the main functional parameters of OICSEs,including ionic conductivity,Li+transfer number,mechanical strength,electrochemical stability,electronic conductivity,and thermal stability are systematically *** lithium-ion conduction mechanism of OICSE is thoroughly analyzed and concluded from the microscopic ***,the classic inorganic filler types,including both inert and active fillers,are categorized with special emphasis on the relationship between inorganic filler structure design and the electrochemical performance of ***,the advanced characterization techniques relevant to OICSEs are summarized,and the challenges and perspectives on the future development of OICSEs are also highlighted for constructing superior ASSLBs.

关键词： Composite solid electrolytes Inorganic filler Interfacial stability Li-ion conduction mechanism Characterization techniques

Novel method of separating macroporous arrays from p-type silicon substrate

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Journal of Semiconductors 2012年第4期33卷 28-31页

作者：彭波波王斐刘涛杨振亚王连卫 Ricky k.y.fu 朱剑豪 key Laboratory of Polar Materials and Devices Ministry of EducationDepartment of Electronic EngineeringEast China Normal UniversityShanghai 200241China Department of Physics and Material Sciences City University of Hong KongTat Chee AvenueKowloonHong KongChina

This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 1 O0 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed.

关键词： electrochemical etching MCP macroporous silicon p-type silicon separation

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高压耦合高功率脉冲磁控溅射的增强放电效应

物理学报 2014年第18期63卷 359-369页

作者：吴忠振田修波潘锋 Ricky k.y.fu 朱剑豪北京大学深圳研究生院新材料学院深圳518055 哈尔滨工业大学先进焊接与连接国家重点实验室哈尔滨150001 香港城市大学物理与材料科学系中国香港九龙

等离子体源离子注入与沉积技术作为一种可生产高结合力、高致密度涂层的真空镀膜技术,具有广阔的应用前景,尤其适用于高载荷工况下服役的功能涂层制备.该技术中金属等离子体源是关键,而现有的脉冲阴极弧源结构复杂,且由于伴随"金属液滴... 详细信息

等离子体源离子注入与沉积技术作为一种可生产高结合力、高致密度涂层的真空镀膜技术,具有广阔的应用前景,尤其适用于高载荷工况下服役的功能涂层制备.该技术中金属等离子体源是关键,而现有的脉冲阴极弧源结构复杂,且由于伴随"金属液滴"而需要增加过滤装置.本文研究了另一种简单结构的金属等离子体源备选一高功率脉冲磁控溅射源(HPPMS)的放电特性,采用等离子体发射光谱仪探索了不同的耦合高压对HPPMS放电靶电流特性和等离子体特性的作用.发现耦合高压对HPPMS放电有明显的促进作用,相同靶电压下的放电强度大幅增加,相对于金属放电,耦合高压对气体放电的促进作用更加明显,但在自溅射为主的高压放电阶段对金属放电的促进作用明显增强.讨论了耦合高压对HPPMS放电的增强机制,发现耦合高压自辉光放电、耦合高压和HPPMS电压构成双向负压形成的空心阴极效应,以及耦合高压鞘层改善的双极扩散效应都对HPPMS放电的增强有明显作用.

关键词：高功率脉冲磁控溅射耦合高压放电靶电流等离子体发射光谱

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高功率脉冲磁控溅射的阶段性放电特征

物理学报 2014年第17期63卷 196-204页

作者：吴忠振田修波李春伟 Ricky k.y.fu 潘锋朱剑豪北京大学深圳研究生院新材料学院深圳518055 哈尔滨工业大学先进焊接与连接国家重点实验室哈尔滨150001 香港城市大学物理与材料科学系

本文从放电靶电流出发,采用一种新的研究方法,即将靶电流分解为多个代表具体放电特性的特征参数,全面而系统的研究了不同的工作气压条件下,靶电流各特征参数随靶电压的增加而进行的演化.结果发现高功率脉冲磁控溅射技术(HPPMS)放电靶电... 详细信息

本文从放电靶电流出发,采用一种新的研究方法,即将靶电流分解为多个代表具体放电特性的特征参数,全面而系统的研究了不同的工作气压条件下,靶电流各特征参数随靶电压的增加而进行的演化.结果发现高功率脉冲磁控溅射技术(HPPMS)放电靶电流在靶电压由低向高增加的过程中,出现靶电流峰值和平台值的交替变化,体现出明显的阶段性放电特征,且不同的放电阶段在不同气压下出现一定的移动,会在测量范围内出现某些放电阶段的缺失.本文还通过等离子体发射光谱对HPPMS放电靶前等离子体测量发现五个不同的放电阶段分别主要对应氩原子、铬原子、氩离子、铬离子和氩、铬高价离子的放电,但不同的放电条件下相邻的阶段会出现一定程度的交叠.

关键词：高功率脉冲磁控溅射放电靶电流工作气压阶段性放电

NONLINEAR ANALySIS OF DyNAMIC STABILITy FOR LAMINATED CIRCULAR CyLINDRICAL THICk SHELLS WITH ENDS ELASTICALLy SUPPORTED AGAINST ROTATION

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Acta Mechanica Solida Sinica 1994年第1期7卷 15-28页

作者： y.k.CHEUNG y.M.fu Department of Civil and Structural Engineering University of Hong kong Hong Kong Department of Engineering Mechanics Hunan University ChangshaP.R.China

Based on Timoshenko-Mindlin kinematic hypotheses and Hamilton's principle,a dynamic non-linear theory for general laminated circular cylindrical shells with transverse shear deformation is developed.A multi-mode solution for periodic in- plane loads is formulated for the non-linear dynamic stability of an anti-symmetric angle-ply cylinder with its ends elastically restrained against *** resulted equations in terms of time function are solved by the incremental harmonic balance method.

关键词： Hamilton's principle dynamic stability

Uniformity of TiN Films Fabricated by Hollow Cathode Discharge

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Plasma Science and Technology 2010年第2期12卷 212-217页

作者：姜海富巩春志田修波杨士勤 R.k.y.fu P.k.CHU State key Lab.of Advanced Welding Production & Technology School of Material Science and Engineering Harbin Institute of Technology Department of Physics and Materials Science City University of Hong Kong

Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency （RF）. The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy （AFM） revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.

关键词： hollow cathode TiN film uniformity

Spatial Potential Distribution around Trench Target during Plasma Immersion Ion Implantation

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Journal of Materials Science & Technology 2003年第z1期19卷 94-96页

作者： Xiubo Tian Chunbei Wei Shiqin yang Paul k. Chu Ricky k.y. fu State key Lab. of Welding Production Technology School of Mater. Sci. & Eng. Harbin Institute of Technology Harbin 15001 China Department of Physics & Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong State Key Lab. of Welding Production Technology School of Mater. Sci. & Eng. Harbin Institute of Technology Harbin 15001 China Department of Physics & Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong State Key Lab. of Welding Production Technology School of Mater. Sci. & Eng. Harbin Institute of Technology Harbin 15001 China Department of Physics & Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong State Key Lab. of Welding Production Technology School of Mater. Sci. & Eng. Harbin Institute of Technology Harbin 15001 China Department of Physics & Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong State Key Lab. of Welding Production Technology School of Mater. Sci. & Eng. Harbin Institute of Technology Harbin 15001 China Department of Physics & Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong

Plasma ion implantation, an alternative to conventional beam-line ion implantation, is a sheath-acceleration ionbombardment technique and the initial sheath is crucial to the process efficacy and surface properties. The initialspatial potential distribution in the plasma sheath around a trench-shaped target is simulated using a two-dimensionalmodel in this work. The results demonstrate that the sheath structure depends very much on the trench width. Thepotential drop in the trench may be quite small and the sheath expands outward if the width is small. This leadsto a smaller incident ion dose into the sidewalls of the trench. In contrast, the initial potential distribution in thecentral region is quite similar to that without a trench if the trench width is larger than twice the ion-matrix sheaththickness for an infinite plane. Consequently, a higher ion dose into the sidewalls is possible.

关键词： Plasma ion implantation, Trench target, Potential distribution