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Some Propert.es of Manganese Oxide （Mn-O） and Lit.ium Manganese Oxide （Li-Mn-O） t.in Films Prepared via Met.l Organic Chemical Vapor Deposit.on （MOCVD） t.chnique

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材料科学与工程（中英文B版） 2015年第5期5卷 231-242页

作者： Kabir O. Oyedot.n Marcus Adebola Eleruja Bolut.fe Olofinjana Olumide Oluwole Akinwunmi Olusoji O.Ilori Ezekiel Omot.so Emmanuel. Ajenifuja adetokunbo t. famojuro Eusebius I. Obianjuwa Ezekiel Oladele Bolarlnwa Ajay Depart.ent.of Physics and Engineering Physics Obafemi Awolowo University lle-Ife 220005 Nigeria Depart.ent.of Elect.onic and Elect.ical Engineering Obafemi Awolowo University Ile-Ife 220005 Nigeria Cent.e for Energy Research and Development Obafemi Awolowo University Ile-lfe 220005 Nigeria Depart.ent.of Chemist.y Obafemi Awolowo University Ile-Ife 220005 Nigeria

Single solid source precursors, Manganese acet.lacet.nat. (Mn[C5H7O2]2) and Lit.ium manganese acet.lacet.nat. (Li-Mn[C5H7O2]3) were prepared and t.in films of Mn-O and Li-Mn-O were deposit.d on sodalime glass subst.at.s using MOCVD (Met.l organic chemical vapour deposit.on) t.chnique by pyrolysing Mn[C5H7O2]2 and Li-Mn[C5H7O2]3 respect.vely at.a t.mperat.re of 420 °C for approximat.ly 2 h. t.e films were charact.rized using RBS (Rut.erford backscat.ering spect.oscopy), SEM (Scanning elect.on microscopy), XRD (X-ray diffract.on), van der Pauw met.od and Ult.aviolet.Visible Spect.oscopy. t.e composit.onal analysis showed t.at.t.e Mn: O rat.o is 0.2:0.8 while t.at.of Li: Mn: O was found t. be 0.47:0.24:0.29. SEM micrograph showed t.at.Mn-O film is composed of hollow needle-like rods wit. coarse, cont.nuous and uniformly dist.ibut.d polycryst.lline grains rod-like, having average grain size est.mat.d t. be below 10μm while t.ose of Li-Mn-O showed t.at.t.e film is dendrit.c and polycryst.lline in which some of t.e grains were found t. lump t.get.er. XRD also showed t.e polycryst.lline nat.re of t.e films wit. ort.orhombic MnO2 and ort.orhombic Li3MnO4 st.uct.res for Mn-O and Li-Mn-O t.in films respect.vely. Result. of charact.rizat.on also showed t.at.t.e films are semiconduct.ng, highly absorbing in t.e visible region wit. absorpt.on edges observed at.wavelengt.s of 525 nm and 550 nm, corresponding t. direct.opt.cal band gaps of 2.36 eV and 2.25eV for Mn-O and Li-Mn-O t.in films respect.vely.

关键词：金属有机化学气相沉积锂锰氧化物薄膜沉积 MOCVD 制备技术性质紫外可见光谱

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Synt.esis and Charact.rizat.on of Graphene Oxide and Reduced Graphene Oxide t.in Films Deposit.d by Spray Pyrolysis Met.od

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Graphene 2016年第3期5卷 143-154页

作者： M. S. Eluyemi M. A. Eleruja A. V. Adedeji B. Olofinjana O. Fasakin O. O. Akinwunmi O. O. Ilori A. t. famojuro S. A. Ayinde E. O. B. Ajayi Depart.ent.of Physics and Engineering Physics Obafemi Awolowo University Ile-Ife Nigeria Depart.ent.of Chemist.y and Physics Elizabeth City State University Elizabeth City NC USA Depart.ent.of Elect.onics and Elect.ical Engineering Obafemi Awolowo University Ile-Ife Nigeria Depart.ent.of Chemist.y Obafemi Awolowo University Ile-Ife Nigeria

Graphene Oxide (GO) was chemically synt.esized from Nat.ral Flake Graphit. (NFG). t.e GO was chemically reduced t. Reduced Graphene Oxide (RGO) using hydrazine monohydrat.. t.in films of GO and RGO were also deposit.d on sodalime glass subst.at. using spray pyrolysis t.chnique (SPt.. t.e samples were charact.rized using Fourier t.ansform Infrared (Ft.R) spect.oscopy, Scanning Elect.on Microscopy (SEM) wit. Energy Dispersive X-Ray (EDS) facilit. at.ached t. it. UV-Visible Spect.omet.y and Four-Point.probe. t.e Ft.R spect.a showed t.e addit.on of oxygen funct.onalit. groups in GO while such groups was drast.cally reduced in RGO. SEM micrograph of GO t.in film showed a porous sponge-like st.uct.re while t.e micrograph of RGO t.in film showed evenly dist.ibut.d and well connect.d graphene st.uct.re. t.e EDX spect.um of RGO showed t.at.t.ere was decrease in oxygen cont.nt.and increase in carbon cont.nt.of RGO when compared t. GO. t.e opt.cal analysis of t.e GO and RGO t.in films gave a direct.energy bandgap of 2.7 eV and 2.2 eV respect.vely. t.e value of sheet.resist.nce of GO and RGO films was det.rmined t. be 22.9 × 106Ω/sq and 4.95 × 106Ω/sq respect.vely.

关键词： Graphit. Graphene Graphene Oxide t.in Films Sheet.Resist.nce

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