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Impact of Heat Treatments and Hole Density (p) on the Structural, Electrical, and Superconducting Properties of LnSrBaCu₃O_6+z (Ln = Eu, Sm, Nd) Compounds

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Communications and Network 2023年第4期15卷 83-97页

作者： Mohammed Bellioua Mohamed Id El Amel Fatima Bouzit Mohamed Errai Driss Soubane Aderrahim Ait Khlifa Mohammed Khenfouch Issam Mouhti Ahmed Tirbiyine Essediq Youssef El Yakoubi abdelhakim nafidi Laboratory of Materials Electrical Systems Energy and Environment Department of Applied Physics Faculty of Applied Sciences Ibnou Zohr University Agadir Morocco LAMISNE Laboratory Polydisciplinary Faculty of Taroudant Ibn Zohr University Agadir Morocco Department of Physics Polydisciplanry Faculty Safi Cadi Ayyad University Marrakech Morocco ALLS Laboratory at INRS-EMT Varennes Canada Laboratory of Condensed Matter Physics and Nanomaterials for Renewable Energy Faculty of Sciences Agadir Morocco

In this study, we thoroughly examined the impact of heat treatments and hole count (p) on the properties of LnSrBaCu3O6+z (Ln = Eu, Sm, Nd) compounds. We focused on preparation, X-ray diffraction with Rietveld refinement, AC susceptibility, DC resistivity measurements, and heat treatment effects. Two heat treatment types were applied: oxygen annealing [O] and argon annealing followed by oxygen annealing [AO]. As the rare earth Ln’s ionic radius increased, certain parameters notably changed. Specifically, c parameter, surface area S, and volume V increased, while critical temperature Tc and holes (p) in the CuO2 plane decreased. The evolution of these parameters with rare earth Ln’s ionic radius in [AO] heat treatment is linear. Regardless of the treatment, the structure is orthorhombic for Ln = Eu, tetragonal for Ln = Nd, orthorhombic for Ln = Sm [AO], and pseudo-tetragonal for Sm [O]. The highest critical temperature is reached with Ln = Eu (Tc [AO] = 87.1 K). Notably, for each sample, Tc [AO] surpasses Tc [O]. Observed data stems from factors including rare earth ionic size, improved cationic and oxygen chain order, holes count p in Cu(2)O2 planes, and in-phase purity of [AO] samples. Our research strives to clearly demonstrate that the density of holes (p) within the copper plane stands as a determinant impacting the structural, electrical, and superconducting properties of these samples. Meanwhile, the other aforementioned parameters contribute to shaping this density (p).

关键词： High-Tc Superconductors Heat Treatments Hole Density (p) Tc Parameter c Surface ab Electrical Resistance X-Ray Diffraction

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Carcinoid tumor of the common bile duct: A rare complication of von Hippel-Lindau syndrome

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World Journal of Gastroenterology 2008年第8期14卷 1299-1301页

作者： Otmane nafidi Bich N Nguyen André Roy Department of Surgery Saint-Luc Hospital CHUM Montréal Québec H2X 3J4 Canada Department of Pathology Saint-Luc Hospital CHUM Montréal Québec H2X 3J4 Canada Department of Surgery Saint-Luc Hospital CHUM 1058 Saint-Denis Street Montréal Québec H2X 3J4 Canada

Von HippeI-Lindau syndrome （VHL） is a rare autosomal-dominant, inherited familial cancer syndrome. Hemangioblastomas, pheochromocytomas and renal carcinoma are the frequent reported VHL tumors. Neuroendocrine tumors have also been described, mostly in the pancreas and rarely in the biliary trees. We report the second case of bile duct carcinoid in a 31-year-old VHL woman. She underwent right adrenalectomy for a pheochromocytoma in the past. She also had a positive family history of phenotypic expression of VHL syndrome. The patient presented with biliary colic. Endoscopic retrograde cholangio-pancreatography showed intraluminal bile duct mass. Surgical exploration identified a beige nodular lesion that was a carcinoid tumor on histology. This new association should be clarified by further genetic investigations.

关键词： Carcinoid tumor Bile duct tumor von Hippel-Lindau syndrome

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Synthesis of In_2S_3 thin films by spray pyrolysis from precursors with different[S]/[In] ratios

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Journal of Semiconductors 2014年第6期35卷 5-9页

作者： Thierno Sall A.nafidi Bernabé Marí Soucase Miguel Mollar Bouchaib Hartitti Mounir Fahoume L.P.M.C Faculté des SciencesUniversité Ibn TofaiBP.133-14000 KenitraMorocco Departamento de Fisica Aplicada-IDF Universitat PolitècnicaCamí de Vera s/n 46022 ValènciaSpain Laboratory of Condensed Matter Physics and Nanomaterials for Renewable Energy University Ibn ZohrAgadirMorocco LPMAER Départment de PhysiqueUniversité Hassan II FSTM MohammediaMorocco

Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.

关键词： In2S3 thin films spray pyrolysis [S]/[In] ratio AFM Raman spectroscopy

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