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Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature

journal of Semiconductors 2013年第8期34卷 8-14页

作者： M.A.Yeganeh R.K.Mamedov a.j.novinrooz Islamic Azad University Bonab Branch Faculty of Electronic Engineering Faculty of Physics Baku State UniversityAcademic Zahid Khalilov Str.23AZ 1148Baku Islamic Azad University Takestan Branch Faculty of Physics

Schottky diodes with an Ag/n-Si/W/Cu structure and 100μm in diameter were *** the silver metal surface coating on the n-Si substrate using a scanning probe microscopy（SPM） device showed a large number of nano patches in the surface with dimensions of 0 to 100 *** potential distribution of the patches revealed that the potential of each patch with the neighboring patches was *** electrical characteristics of the devices were studied between temperature ranges of 300 and 380 *** the temperature ideality factor approximately increases,the potential barrier height *** potential barrier height was calculated separately from theⅠ-Ⅴand C-V *** main reasons for the significant difference between room temperature and higher temperatures were the differences in patch distribution,the different potentials of each patch,and the interactions between *** effective potential barrier height depended on the degree of inhomogeneity,and thus the operating potential barrier height in the contact surface was smaller than the average value,and the ideality factor was more than *** the increase in the potential value,the ideality factor becomes close to unitary, and with increasing temperatures,the ideality factor is *** this case,the maximum potential barrier height accrues at a greater distance from the metal *** this reason,at high temperatures the average value of the potential barrier height is ***,with increasing temperature,the ideality factor is increased.

关键词： Schottky contact nano patch high temperatures Schottky parameters AFM and SPM

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