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Analysis of leakage current in GaAs micro-solar cell arrays

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science China(Technological sciences) 2010年第5期53卷 1240-1246页

作者： WANG YanShuo1,CHEN NuoFu1,2,3.ZHANG XingWang1,BAI YiMing1,WANG Yu1,HUANG TianMao1,ZHANG Han1 & SHI HuiWei1 1 key laboratory of semiconductor {3. science,institute of semiconductors,chinese academy of sciences,po box 912,beijing 100083.China 2 School of Renewable Energy Engineering,North China Electric power University,beijing 102206,China 3.National laboratory of Micro-Gravity,institute of Mechanics,chinese academy of sciences,beijing 100080,China 1. key laboratory of semiconductor {3. science Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083 China2. School of Renewable Energy Engineering North China Electric Power University Beijing 102206 China3. National Laboratory of Micro-Gravity Institute of Mechanics Chinese Academy of Sciences Beijing 100080 China

The output characteristics of micro-solar cell arrays are analyzed on the basis of a modified model in which the shunt resistance between cell lines results in current *** modification mainly consists of adding a shunt resistor network to the traditional *** obtained results agree well with the reported experimental *** calculation results demonstrate that leakage current in substrate affects seriously the performance of GaAs micro-solar cell *** performance of arrays can be improved by reducing the number of cells per *** addition,at a certain level of integration,an appropriate space occupancy rate of the single cell is recommended for ensuring high open circuit voltages,and it is more appropriate to set the rates at 80%-90% through the calculation.

关键词： micro-solar cell MEMS(micro-electromechanical systems) leakage current

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

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中国科学：技术科学英文版 2010年第9期53卷 2569-2574页

作者： ZHANG Han1,CHEN NuoFu2,3.WANG Yu1,ZHANG XingWang1,YIN ZhiGang1,SHI HuiWei1,WANG YanSuo1,HUANG TianMao1,BAI YiMing2 & FU Zhen11 key laboratory of semiconductor {3. science,institute of semiconductors,chinese academy of sciences,P.O.box 912,beijing 100083.China 2 School of Renewable Energy Engineering,North China Electric {13.wer University,beijing 102206,China 3.State key laboratory of Silicon {3.,Zhejiang University,Hangzhou 3.0027,China 1. key laboratory of semiconductor {3. science Institute of Semiconductors Chinese Academy of Sciences P.O. Box 912 Beijing 100083 China2. School of Renewable Energy Engineering North China Electric Power University Beijing 102206 China3. State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310027 China

The photovoltaic conversion efficiency for monolithic GaInP/GaInAs/Ge triple-junction cell with various bandgap combination (3.0 suns,AM1.5d) was theoretically *** impressive improvement on conversion efficiency was observed for a bandgap combination of 1.708,1.194,and 0.67 eV.A theoretical investigation was carried out on the effect of dislocation on the metamorphic structure’s efficiency by regarding dislocation as minority-carrier recombination *** results showed that only when dislocation density was less than 1.6×106 cm-2,can this metamorphic combination exhibit its efficiency advantage over the fully-matched *** addition,we also briefly evaluated the lattice misfit dependence of the dislocation density for a group of metamorphic triple-junction system,and used it as guidance for the choice of the proper cell structure.

关键词： tandem solar cell theoretical efficiency dislocation buffer layers

Growth of InAs nanostructures by droplet epitaxy

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Growth of InAs nanostructures by droplet epitaxy

国际纳光电子学研讨会

作者： C. Zhao(1) Y.H. Chen(2) B. Xu(3. Z.G. Wang(4) key laboratory of semiconductor {3. science institute of semiconductors chinese academy of sciences P.O. box 912 beijing 100083.China

＜正＞The authors report the growth evolution of InAs dots and rings with the indium deposition amount on GaAs by droplet molecular beam *** is a critical deposition amount to form dots and rings,respectively.

关键词：

RESEARCH AND PROGRESS IN DIFFERENT NANOSTRUCTURE-MORPHOLOGIES ON INP

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RESEARCH AND PROGRESS IN DIFFERENT NANOSTRUCTURE-MORPHOLOGIE...

第8届国际材联电子材料国际研讨会

作者： Zhao Feng-ai Xu Bo Liu Feng-qi Jin Peng Zhu Tian-wei Meng Xian-quan Li Cheng-ming ZhangZi-yang He Jun Wang Zhan-guolaboratory of semiconductor materials {3. institute of semiconductor chinese academy of sciences po box 912 beijing 100083.China

＜正＞ Many works have been devoted to understanding the nature and mechanisms of the different morphologies of InAs nanostructures grown on InP which are promising candidates for light emitting devices in the wavelength range 1.3.1.55μm. On InP, the formation of quantum dots has been observed, a transition to the growth of elongated structures along or even wires has been observed as well. In recent related studies, the diffusion anisotropy of adatoms along different crystallographic directions is considered to be the main reason and the observed anisotropic growth behavior is regarded as being caused by many ways including the

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Al_2O_3.Coated Nano-SiC Particles Reinforced Al_2O_3.Matrix Composites

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Journal of materials science & Technology 2002年第6期18卷 541-543页

作者： Juxian ZHANG, Jinjun FENG and Longqiao GAObeijing Vacuum Electronics Research institute, po. {3. 749 Ext. {3. 3., beijing 100016, China beijing Vacuum Electron. Res. Inst. PO Box 749 Beijing 100016 China

Properties of Al2O3.coated nano-SiC have been compared with those of as-received SiC. The isoelectric point (IEP) of SiC changed from pH3.4 to pH7.3.after coating with the alumina precursor, which is close to that of alumina. Because both surfaces of coated SiC and AI2O3.possess higher positive charge at pH=4.5-5.0, they are uniformly dispersed in the two-phase aqueous suspensions, Then a mixed powder containing nano-SiC dispersed homogeneously into the Al2O3.matrix was achieved from flocculating the two-phase suspension. Finally, Al2O3.SiC nanocomposites were obtained by coating nano-SiC with Al2O3. in which the majority of SiC particles were located within the AI2O3.grains. The observation by transmission electron microscopy (TEM) and the analysis by the X-ray photoelectron spectroscopy (XPS) showed that cracks propagated towards the intragranular SiC rather than along grain boundaries.

关键词： Coated nano-SiC Colloidal processing Nanocomposites Intragranular structure Transgranular fracture

The Growth of Semi-polar ZnO (1011) on Si (111) Substrates Using a Methanol Oxidant by Metalorganic Chemical Vapor Deposition

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chinese Physics Letters 2012年第1期29卷 264-267页

作者： SANG Ling WANG Jun SHI Kai WEI Hong-Yuan JIAO Chun-Mei LIU Xiang-Lin YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guokey laboratory of semiconductor {3. science institute of semiconductors chinese academy of sciences P.O.Box 912Beijing 100083

Semi-polar ZnO (1011) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500℃.X-ray (O) scanning indicates that there are six kinds of in-plane domain growths,with the ZnO [1012] parallel to the Si (11(2)〉 direction *** crystallographic orientation of ZnO is supposed to be caused by surface *** methanol,as a polar molecule,may be adsorbed on the Si (111) surface to form a passivation layer,which inhibits the (0001) ZnO plane deposition on the substrate surface,and as a result the ZnO (1011) plane becomes *** optical properties,examined by a roomtemperature photoluminescence spectrum,exhibit a strong near-band-edge emission peak at 3.9nm,indicating that the (1011) ZnO film has good crystal *** results are significant for research into and for the applications of semi-polar ZnO films.

关键词： plane methanol polar

Temporal and spatial distribution of Mesozoic mafic magmatism in the North China Craton and implications for secular lithospheric evolution

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Temporal and spatial distribution of Mesozoic mafic magmatis...

中国科学院地质与地球物理研究所2007学术年会

作者： H.-F.ZHANG State key laboratory of Lithospheric Evolution,institute of Geology and Geophysics,{3.,po box 9825,beijing 100029,China

Mesozoic mafic magmatism in the North China Craton shows a clear temporal and spatial *** mafic volcanism occurred dominantly in the northern and southern margins of the craton,with episodic eruptions from Early Jurassic to Late Cretaceous *** contrast, Mesozoic mafic magmatism,which produced gabbroic to dioritic intrusive complexes, occurred in the centre of the craton in areas such as the Taihang Mountains and the Luzhong region,and all the complexes were intruded at almost the same time in the Early Cretaceous. This temporal and spatial distribution of Mesozoic mafic magmatism shows a strong heterogeneity of the Late Mesozoic lithospheric mantle beneath the North China Craton and a secular evolution of the lithospheric mantle beneath *** lithospheric mantle beneath the Luzhong region is slightly isotopically enriched;that beneath the Taihang Mountains has an EMI character in Sr and Nd isotopic features(Sr/Sr) = 0.7050-0.7066;εNd(t))= -17 to -10);and it possesses EM2-like characteristics.(Sr/Sr) up to 0.7114) beneath the Luxi-Jiaodong *** general enrichment suggests that the Mesozoic lithospheric mantle was distinctive compared with Palaeozoic and Cenozoic *** secular evolution of this variably enriched Mesozoic lithospheric mantle requires a considerable modification,transformation and reconstruction of the lithospheric mantle beneath the craton in Late Mesozoic *** elemental and isotopic compositions and the coherence of the lithospheric changes with the formation of circum-craton orogenic mobile belts indicate that these rapid lithospheric changes and corresponding lithospheric thinning were tectonically related to the multiple subduction and subsequent collisions of circumcraton *** melting of subducted oceanic and continental crustal materials produced silicic melts that migrated up and reacted with lithospheric peridotites to generate more fertile lithospheric mantle(‘wet’ low-Mg peridotites pl

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Temperature Dependence of Photocarrier Redistribution in InAs/GaAs Quantum Dots

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Temperature Dependence of Photocarrier Redistribution in InA...

第一届全国纳米技术与应用学术会议

作者： Y.C. Zhang, C. J. Huang, J. Wu, Y. H. Cheng, B. Xu, D. Ding, F. Q. Liu,Z. G. Wanglaboratory of semiconductor materials {3., institute of semiconductor, P. O. box 912, beijing 100083.State key laboratory on Integrated Optoelectronics, institute of semiconductor, P. O. box 912, beijing 100083

＜正＞ In this work we report the photoluminescence （PL） study of multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy （MBE） on （100） oriented GaAs substrates. Low temperature PL shows a distinctive double-peak feature. power-dependent PL and transmission electron microscopy （TEM） confirm that they come from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single QDs. The temperature-dependent PL are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble.

关键词： Quantum dots InAs/GaAs MBE Photoluminescence Absorption

Contribution of subducted Pacific slab to Late Cretaceous mafic magmatism in Qingdao region,China:A petrological record

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Contribution of subducted Pacific slab to Late Cretaceous ma...

中国科学院地质与地球物理研究所2008学术年会

作者： Jin Zhang,Hong-fu Zhang,~* Ji-feng Ying,Yan-jie Tang and Li-feng Niu State key laboratory of Lithospheric Evolution,institute of Geology and Geophysics,{3. academy of sciences,po box 9825,beijing 100029,China

The occurrence of the Pishikou mafic dike in the Qingdao region,China provides important constraints on the origin of Late Cretaceous(86-78 Ma) mafic magmatism on the eastern North China *** Pishikou mafic dike is distributed in the Cretaceous Laoshan granitoid body,Qingdao region and contains peridotitic and granulitic xenoliths, xenocrysts,and *** from the Pishikou mafic dike are basanites and have low SiO(8 wt%),total alkalis (NaO + KO>4.8 wt%,NaO/KO>1),TiO(>2.5 wt%),CaO(>9 wt,%) and po (>1 wt%).In trace element abundances,they are highly enriched in large ion lithophile elements(LILEs) and light rare-earth elements(LREEs)(ΣREE = 3.9-403.ppm,(La/ Yb) = 3.-42) without high field strength element(HFSE) *** rocks have radiogenic Sr and Pb,and less radiogenic Nd isotopic compositions[(Sr/Sr);>0.7059,εNd≈2.7-3.8(Pb/Pb)≈18.0±0.1].The diagnostic elemental ratios,such as Nb/La, Nb/U,and Nb/Th,are compatible with those of mid-oceanic ridge basalts(MORBs) and oceanic island basalts(OIBs).Therefore,the Pishikou mafic dike has a geochemical feature completely different from those of the Early Cretaceous mafic dikes from the Qingdao region,but similar to those of back-arc basalts from the Japan *** geochemical feature suggests that the Pishikou mafic dike was derived from an asthenosphere source, but contaminated by {3. from the subducted Pacific *** discovery of this mafic dike thus provides a petrological evidence for the contribution of subducted Pacific slab to the Late Cretaceous magmatism in the Qingdao region of the eastern North China craton.

关键词： asthenospheric source contribution of subducted Pacific slab Late Cretaceous mafic dike Qingdao