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Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO_2) _x(SiO_2)_(1-x)

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Science china(Technological Sciences) 2009年第8期52卷 2222-2226页

作者： Lü ShiCheng1,2, YIN Jiang1,2, XIA YiDong2,3. GAO LiGang2,3.& LIU ZhiGuo2,3.1 department of physics, nanjing university,{3., china 2 National laboratory of solid Sate microstructures, nanjing university,{3., china 3.department of Materials Science and Engineering, nanjing university,{3., china 1. department of physics Nanjing University Nanjing 210093 China 2. National laboratory of solid Sate microstructures Nanjing University Nanjing 210093 China 3. department of Materials Science and Engineering Nanjing University Nanjing 210093 China

(ZrO2)x(SiO2)1-x (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800℃ with RTA process in N2 for 60 s. The XPS spectra indi- cated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800℃, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO2 after annealing under the same condition, and SiO2 was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO2)0.7(SiO2)0.3.(ZrO2)0.5(SiO2)0.5/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate.

关键词： high-k dielectric film pulsed laser deposition pseudo ternary alloy

Surface configurations during annealing of sputter-deposited NiTi thin films

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Chinese Science Bulletin 1997年第23期42卷 2019-2020页

作者： GONG Fengfei, JIANG Enyong, SHEN Huimin and WANG Yening1. department of Applied physics, Tianjin university, Tianjin 3.0072 The National {3. of solid state microstructures, nanjing university, nanjing 210008 Center for Advanced Studies in Science and Technology of microstructures, nanjing 210093, china 2. department of physics, Tianjin university, Tianjin 3.0072, china 3. National {3. of solid state microstructures, nanjing university, nanjing 210008, Center for Advanced Studies in Science and Technology of microstructures, nanjing 210093, china. department of Applied physics Tianjin University Tianjin The National laboratory of solid state {3. Nanjing University Nanjing Center for Advanced Studies in Science and Technology of microstructures Nanjing China department of physics Tianjin University Tianjin China National laboratory of solid state {3. Nanjing University Nanjing

SPUTTER-DEPOSITED NiTi thin films are becoming more and more important because of their po-tential applications to the intelligent thin-film systems. The as-deposited NiTi thin films pre-pared by magnetron sputtering are generally amorphous. Because the amorphous NiTi thinfilms cannot show shape memory effect, they should be crystallized under appropriate anneal-

关键词： NiTi Surface configurations during annealing of sputter-deposited NiTi thin films

Interfacial Tunnel-type GMR in Granular PerovskiteLa_(1-x)Sr_xMnO_3

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Journal of Materials Science & Technology 1999年第4期15卷 373-374页

作者： Ning ZHANG and Minyu ZENG(department of physics, nanjing Normal {3., nanjing 210097, china)WeiPing DING, Wei ZHONG and Youwei DU(National laboratory of solid state microstructures, nanjing university, nanjing 210093, china)To whom correspondence sh nanjing Normal Univ Dept Phys Nanjing 210097 Peoples R China nanjing Univ Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China

The spin-dependent intedecial tunneling and the corresponding tunnef-type magnetoresistance (TMR) have been observed in granular perovskite La_(1-x)Sr_xMnO_3.with x from 0.05 to *** shows that the intedecial tunneling originates from the magnetic difference between thegrain core and the sudece, and the TMR stems from the field-induced change of magnetic orderin the interface.

关键词： Sr x)SrxMnO3 MnO GMR Interfacial Tunnel-type GMR in Granular PerovskiteLa type

Special magnetic phenomena in heavily doped La_(0.7-x)Dy_xSr_(0.3.MnO_3.system

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Science china(physics,Mechanics & Astronomy) 2008年第1期51卷 90-97页

作者： LIU Ning 1,2 ,YAN GuoQing 1,3.,CAI ZhiRang 1 ,PI Li 2 ,ZHANG Bei 2 &TONG Wei 2 1 department of physics,Suzhou College,Suzhou 23.000,china 2 Structure Research {3.,university of Science and Technology of china,Hefei 23.026,china 3.National {3. of solid state microstructures,physics department,{13. university,{13. 210093,china 1. department of physics Suzhou College Suzhou 234000 China 2. Structure Research laboratory University of Science and Technology of China Hefei 230026 China 3. National laboratory of solid state {3. Physics Department Nanjing University Nanjing 210093 China

The magnetism in heavily Dy doped La0.7-xDyxSr0.3.nO3.0.40≤x≤0.70)system is studied in this *** M-T relation seems to be complicated with the increase of *** sample with x=0.40,AFM behavior exists at T≤TN and M-T curves under zero field cooling(ZFC)and field cooling(FC)exhibit typical behavior of spincluster glass state above *** the sample with x=0.50,the M-T curve under ZFC exhibits a valley at a low temperature while the M-T curve under FC exhibits the negative magnetization below *** samples with x=0.60,0.70,their ZFC M-T curves are similar to that of x=0.50,but the FC M-T curves do not exhibit negative values any *** the peculiar phenomena above are well explained by Néel double-lattice model combined with M-H relation at typical *** molecular field theory fits well the negative magnetization for x=0.50.

关键词： heavily doped special magnetic phenomena double-lattice model

DISTRIBUTION OF VORTEX BARRIERS AT DIFFERENT TEMPERATURES FOR TL 2212 FILM

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南京大学学报(自然科学) 1999年第4期35卷 500-501页

作者： Lin Fenyong Ding Shiying (National laboratory of solid state {3. and department of physics, nanjing university,210093,nanjing,PRC) 南京大学物理系固体微结构物理国家重点实验室江苏

HARMONIC RESPONSE AND FLUX CREEP OF SUPERCONDUCTOR

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南京大学学报(自然科学) 1999年第5期 634-635页

作者： Ding Shiying (department of physics,National laboratory of {3. state microstructures,nanjing university, Center for Advance Studies in Science and Technology of microstructures,210093,nanjing, PRC)

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关键词： ac susceptibility superconductivity harmonics

Optical Properties of One-dimensional Three-component Photonic Band Gap Structure

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The Journal of china Universities of Posts and Telecommunications 2003年第2期10卷 22-26,33页

作者： CAI Xiang bao (department of Applied Mathematics and physics, nanjing university of Posts and Telecommunications, {3. 210003. P.R.china National laboratory of solid state microstructures, nanjing university, nanjing 210093, P.R.china) department of Applied Mathematics and physics Nanjing University of Posts and Telecommunications Nanjing 210003 P. R. China

Theoretical study of the optical properties of one dimensional three component photonic band gap structure, which is composed of three alternating dielectric layers of different refractive indices and thickness in a unit cell, is performed. This one dimensional photonic band gap structure exhibits the transparency band and forbidden band. We find that there are several mini bands of the allowed transmission to be created within the photonic band gap region of the structure if a defect designed specially is introduced inside the structure. This characteristic is very important for some practical applications.

关键词： photonic crystal photonic band gap optical property forbidden band

FERROELECTRIC CHARACTERISTICS OF SrBi_2Ta_2O_9 THIN FILMS ANNEALED IN FORMING GAS

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Acta Metallurgica Sinica(English Letters) 2001年第6期14卷 517-519页

作者： D.S. Wang, T. Yu and A. Hu (department of physics & National laboratory of {3. state microstructures, nanjing university, nanjing 210093, china) D. Wu, A.D. Li, Z.G. Liu and N.B. Ming (department of Material Science and Engineering & National laboratory department of Material Science and Engineering & National laboratory of solid {3. microstructures Nanjing University

The degradation behavior of SrBi2Ta2O9 (SBT) thin films annealed in forming gas (5%H2+95%N2) was investigated. The ferroelectric remnant polarization Px of SBT had a severe decrease in the containing H2 atmosphere at 400°C. SEM results showed that Bi could be reduced from SBT thin films for the effect of H2. The reduction role increased with a rise of annealing temperature. SBT thin films lost their ferroelectricity when the annealing temperature was above 450°C. It implied that the degradation of Pr value or the disappearance of ferroelectricity in SBT thin, films had the relationship with the reductive amounts of Bi in SBT. H2 played an important role in degradation of ferroelectric SBT thin films. This role could be attributed to its strong reduction activity during forming gas annealing.

关键词： Annealing Degradation Ferroelectricity Thermal effects

Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction

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Science china(physics,Mechanics & Astronomy) 2010年第1期53卷 68-71页

作者： XIE ZiLi 1,2,3. ZHOU YuanJun 1 , SONG LiHong 1,2 , LIU Bin 1 , HUA XueMei 1,2 , Xiu XiangQian 1 , ZHANG Rong 1,2,3.& ZHENG YouDou 1,2,3.1 JiangSu Provincial Key laboratory of Advanced Photonic and Electronic Materials and department of physics,{3., nanjing 210093, china 2 nanjing National laboratory of microstructures, nanjing 210093, china 3.NJU-Yangzhou Institute of Opto-electronics, Yangzhou, 225001, china 1. JiangSu Provincial Key laboratory of Advanced Photonic and Electronic Materials and department of physics Nanjing University Nanjing 210093 China2. Nanjing National Laboratory of Microstructures Nanjing 210093 China3. NJU-Yangzhou Institute of Opto-electronics Yangzhou 225001 China

High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities are revealed by the technique of X-ray dffraction (XRD). Lattice constants calculated from the omega/2theta scan are c=0.5185 nm and a=0.3.57 nm. Also, the in-plane strain is -1.003., while out of the plane, the epitaxial film is almost relaxed. Several methods are used to deduce the mosaicity and dislocation density of GaN, showing that the edge type dislocations are the overwhelming majority.

关键词： GaN XRD dislocation epitaxial