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聚合物半导体PAn/Si异质结(英文)

固体电子学研究与进展 1989年第4期 413-413页

作者：袁仁宽袁宏顾志萍邵正郑有炓南京大学物理系

The P type semiconducting polymer polianiline (PAn) films have been prepared on n and p type si chips by photo-electrochemical and electrochemical polymerization, and so the semiconducting polymer PAn/silicon heterojunctions have been fabricated. The I dark-V and I photo-V curves, as well as C-V curves at different frequencies have been measured and the energy band diagrams, the distributions of impurity density and the interface states have been analyzed for the heterojunctions. It is demonstrated experimentally that the n-p Si-PAn heterojunction possesses fine photoelectrical characteristics.

关键词：聚合物半导体 PAn/Si 异质结

静水压下CaCO_3.Mn^（2＋）零场分裂a的研究

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四川师范大学学报（自然科学版） 1995年第4期18卷 61-66页

作者：李福珍李兆民四川师范大学物理系

本文采用晶体微观结构、电偶极矩均随静水压力变化的模型，满意地解释了掺杂晶体ＣａＣＯ３：Ｍｎ^（２＋）中~６Ｓ态离子零场分裂立方分量ａ及其随静水压变化的关系。

关键词：电子顺磁共振静水压电偶极矩晶体结构

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磷吸除的机理及光电探测器的研制(英文)

固体电子学研究与进展 1989年第4期 484-484页

作者：郑国祥邬建根王昌平屈逢源复旦大学物理系复旦大学物理系

An efficient gettering is often performed with a back-side phosphorus diffusion; the mechanisms, not well understood, are generally attributed to induced dislocations and/or phosphide. In this work we demonstrate that the high-surface-concentration phosphorus diffusions and the final annealing at moderate temperature are able to produce gettering action. The increment of generation lifetime, measured by using MOS capacitors of starting silicon materials, and the decrement of the dark current of Dhotoelectric device are reported. The backside phosphorus diffusion (gettering) layer at different temperature has been analyzed with the help of SIMS, then we discuss the new gettering mechanism with the formation of a negatively charged pair and segregation annealing.

关键词： phosphorus 光电探测器 annealing negatively understood moderate lifetime SIMS segregation attributed

光折变GaAs在直流电场下双光束耦合的增强效应(英文)

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固体电子学研究与进展 1989年第4期 451-451页

作者：王威礼让庆澜何雪华张合义戴长虹北京大学物理系

Two-beam coupling and energy transfer occur, because of the birefrin-gent nature of the photorefractive grating formed by the two interfering beams. We report the observation of the enhanced two-beam coupling in the semi-insulation Cr-doped GaAs crystals at 1.15μm polarized beam from a CW He-Ne infrared laser under DC electric *** have measured the gain coefficients as a function of the applied DC electric field and the grating spacing. The optimum experimental crystallographic orientation in cubic photo-optic crystals with on applied field has been discussed. These measured results are close to the predicted theoretical values.

关键词：直流电场双光束增强效应

固相法合成中温固体电解质La-Bi-Al-O和La-Bi-Al-Zn-O系列材料

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中国稀土学报 1999年第1期17卷 83-85页

作者：刘江吕喆刘巍裴力刘英梅苏文辉吉林大学物理系长春130023

采用固相合成法合成了La-Bi-Al-O和La-Bi-Al-Zn-O系列材料,确定了其物相为LaAlO3.BiAlO3.Al4Bi2O9的混合相。在La-Bi-Al-Zn-O系列材料中，Zn(2+)加入到LaAlO3.BiAlO3.晶格中，且可使材料的导电率进一步增高。用部分La-Bi-Al-Zn-O材料作为电解质。制成固体氧化物燃料电池，性能测量表明，该电池具有理想的伏安特性，开路电压为-0．6V，短路电流密度为～50mA·cm(－2)。

关键词：稀土镧固体电解质燃料电池复合氧化物

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内调制光探测器的研究(英文)

固体电子学研究与进展 1989年第4期 483-483页

作者：刘国友何民才武汉大学物理系

This paper reports a new photodetector exhibiting intramodulated characteristics. When constant illuminance radiates on the divice, a modulated alternating photo current can be exported, directly proportional to the intensity of the incident light, and directly be amplified by a lock-in amplifier or a selective amplifier; hence the device has a very high SNR and becomes a new device detecting weak light to replace the photodetecting system made up of a chopper and a conventional photodetector. In this paper, we have theoretically and experimentally studied the characteristics of the intramodulated photodetector.

关键词：内调制光探测器

固液同成分点组分的LiNbO3.体吸收边的异常紫移

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物理学报 1985年第2期 275-279页

作者：刘思敏张光寅荣放吴斯嘉康玮刘秋香南开大学物理系

本文报道了固液同成分点组分的LiNbO3.体的本征吸收边的异常紫移的实验结果。这一结果有助于说明,在固溶体中,固液同成分点的存在对应于晶体中最强的Nb—O键合状态。

关键词：晶体吸收边 LiNbO3

Improving the precision of optical metrology by detecting fewer photons with biased weak measurement

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Light(Science & Applications) 2021年第6期10卷 1070-1077页

作者： Peng Yin Wen-Hao Zhang Liang Xu Ze-Gang Liu Wei-Feng Zhuang Lei Chen Ming Gong Yu Ma Xing-Xia ng Peng Gong-Chu Li Jin-Shi Xu Zong-Quan Zhou Lijian Zhang Geng Chen Chuan-Feng Li Guang-Can Guo CAS Key laboratory of Quantum Information University of Science and Technology of China230026 HefeiChina CAS Center For Excellenee in Quantum In formation and Quantum physics University of Science and Technology of China230026 HefeiAnhuiChina. National laboratory of solid state {3. and College of Engineering and Applied Sciences Nanjing UniversityNanjingChina Collaborative Innovation Center of Advanced microstructures Nanjing University210093 NanjingChina

In optical metrological protocols to measure physical quantities,it is,in principle,always beneficial to in crease photon number n to improve measurement ***,practical constraints prevent the arbitrary increase of n due to the imperfections of a practical detector,especially when the detector response is dominated by the saturation *** this work,we show that a modified weak measurement protocol,namely,biased weak measurement significantly improves the precision of optical metrology in the presence of saturation *** method detects an ultra-small fraction of photons while main tains a considerable amount of metrological *** biased pre-coupling leads to an additi onal reduction of photons in the post-selection and gene rates an extinction point in the spectrum distribution,which is extremely sensitive to the estimated parameter and difficult to be ***,the Fisher information can be persistently enhanced by increasing the photon *** our magnetic-sensing experiment,biased weak measurement achieves precision approximately one order of magnitude better than those of previously used *** proposed method can be applied in various optical measurement schemes to remarkably mitigate the detector saturation effect with low-cost apparatuses.

关键词： effect. metrology saturation

高电荷态离子入射Ta表面形成的靶原子的特征光谱线

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咸阳师范学院学报 2004年第4期19卷 14-17页

作者：张小安肖国青杨治虎詹文龙咸阳师范学院物理系中国科学院近代物理研究所甘肃兰州730000

报道了用动能一定而电荷态不同的40Arq+离子和动能不同的40Ar6+离子入射金属Ta表面,靶原子受激辐射发出的200-1000nm波段的特征光谱线的实验结果。实验结果表明:高电荷态离子所激发的靶原子的谱线强度与入射离子的电荷态密切相关,与靶... 详细信息

报道了用动能一定而电荷态不同的40Arq+离子和动能不同的40Ar6+离子入射金属Ta表面,靶原子受激辐射发出的200-1000nm波段的特征光谱线的实验结果。实验结果表明:高电荷态离子所激发的靶原子的谱线强度与入射离子的电荷态密切相关,与靶原子的入射动能没有强的相关性。

关键词：高电荷态离子空心原子谱线强度初动能