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林克明旧居修缮与活化利用,广州,广东,中国

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世界建筑 2024年第8期 64-69页

作者： Guangdong Architectural design and Research Institute Group Co.,Ltd. Architectural design and Research Institute of South China university of technology 广东省建筑设计研究院集团股份有限公司华南理工大学建筑设计研究院有限公司

街区断点更新林克明旧居(简称旧居)1935年由中国第一代著名建筑师林克明设计建造。旧居所在的越秀北路原为民国初年广州城墙拆除后的城基路,城外即东濠涌,前后高差达8m。林克明巧妙地利用地形组织功能与空间,并采用摩登建筑理念,使建筑... 详细信息

街区断点更新林克明旧居(简称旧居)1935年由中国第一代著名建筑师林克明设计建造。旧居所在的越秀北路原为民国初年广州城墙拆除后的城基路,城外即东濠涌,前后高差达8m。林克明巧妙地利用地形组织功能与空间,并采用摩登建筑理念,使建筑形体呈现出迷人的风采。

关键词：建筑形体建筑理念活化利用功能与空间著名建筑师林克明修缮城墙

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番禺市桥先锋社区微改造,广州,广东,中国

世界建筑 2024年第4期 50-53页

作者： Guangzhou Atelier cnS Architectural design Limited Company School of Architecture, South China university of technology Guangzhou Urban Planning and design Company Limited 广州市竖梁社建筑设计有限公司华南理工大学建筑学院广州市城市规划设计有限公司

先锋社区位于市桥之心,自古以来承担着番禺政商中心的城市职能,是千年番禺历史文化的缩影,拥有显赫的宗族聚落文化和丰富的工商贸易文化遗存。21世纪以来,因番禺积极融入广州主城区发展,向北形成经济、教育、居住集聚区,导致番禺城市重... 详细信息

先锋社区位于市桥之心,自古以来承担着番禺政商中心的城市职能,是千年番禺历史文化的缩影,拥有显赫的宗族聚落文化和丰富的工商贸易文化遗存。21世纪以来,因番禺积极融入广州主城区发展,向北形成经济、教育、居住集聚区,导致番禺城市重心北移,市桥的功能和空间日渐衰落,成为番禺城市发展的洼地,旧日荣光不再。在中国全面推进城镇老旧小区改造的背景下,本项目以历史文化保护与集体回忆再现为导向,探究不同于一般老旧社区微改造的新路径、新思路。

关键词：历史文化保护老旧社区城市职能微改造集聚区集体回忆重心北移文化遗存

Wave mechanics in quantum phase space: hydrogen atom

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Progress in Natural Science:Materials International 2007年第2期17卷 144-149页

作者： LU Jun ( Department of Foundational Science, Beijing Union university, Beijing 100101, China Department of Computational Science, National university of singapore, singapore 117543, singapore) Department of Foundational Science Beijing Union University Beijing 100101 China Department of Computational Science National University of Singapore Singapore 117543 Singapore

The rigorous solutions of the stationary Schrodinger equation for hydrogen atom are solved with the wave-mechanics method within the framework of the quantum phase-space representation established by Torres-Vega and Frederick. The "Fourier-like" projection transformations of wave function from the phase space to position and momentum spaces are extended to three-dimensional systems. The eigenfunctions in general position and momentum spaces could be obtained through the transformations from eigenfunction in the phase space.

关键词： quantum phase space hydrogen atom projection transformation.

Decay of geometry for unimodal maps:The C^2 case

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Chinese Science Bulletin 2009年第11期54卷 1859-1862页

作者： SHEN WeiXiao1,2 1 Department of Mathematics, university of Science and technology of China, Hefei 230026, China 2 Department of Mathematics, National university of singapore, singapore 117543, singapore Department of Mathematics University of Science and Technology of China Hefei China Department of Mathematics National University of Singapore Singapore Singapore

We prove that a C2 unimodal interval map with critical order not greater than 2 has the decay of geometry property, by showing that all the cross-ratio estimates needed in the previous proof for the C3 case remain true.

关键词：衰变几何图案件几何性质比率估计证明

Characteristics of In_(0.52)Al_(0.48)As Grown on InP(100) Substrates by Molecular Beam Epitaxy: Growth Optimisation and Effects of Si Doping

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Journal of Materials Science & technology 1997年第2期13卷 91-98页

作者： S.F.Yoon(School of Electrical and Electronic Engineering, Nanyang Technological university, Nanyng Avenue,singapore 639798, Rep. of singapore) School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore

Growth of In0.52Al0.48As epilayers on InP (100) substrates by molecular beam epitaxy at a wide range of substrate tempreatures (470~550℃) and at different Si doping levels has been carried out. Low temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) analyses shaw a strong dependence of the PL and XRD linewidths, XRD intensity ratio (Lepi/Isub), and lattice-mismatch on the substrate temperature. The X-ray diffraction peaks of samples grown at law temperatures show a composition of smaller peaks, indicating the presence of disorder due to alloy clustering. Raman scattering measurements of the same samples show an additional higher energy mode at 273 cm-1 in addition to the InAs-like and AlAs-like longitudinal-optic (LO) phonon modes. Samples doped with Si show an inverted S-shaped dependence of the PL peak energy variation with the temperature which weakens at high doping levels due to a possible reduction in the donor binding energy. Supported be observations of a reduction in both the AlAs-like and InAs-like LO phonon frequencies and a broadening of the LO phonon line shape as the doping level is increased, the PL intensity also shows in increasing degrees at higher doping levels, a temperature dependence which is characteristic of disordered and amorphous materials.

关键词： As Grown on InP Characteristics of In Growth Optimisation and Effects of Si Doping Substrates by Molecular Beam Epitaxy InP Al Si

NUMERICAL MODEL FOR FLOW MOTION WITH VEGETATION

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Journal of Hydrodynamics 2008年第2期20卷 172-178页

作者： ZHANG Jian-tao SU Xiao-hui Department of Civil and Hydraulic Engineering Dalian University of Technology Dalian 116023 China Department of Civil Engineering National University of Singapore Singapore 119260 Singapore

A set of governing equations for turbulent flows in vegetated area were derived with the assumption that vegetation is of straight and rigid cylinder. The effect of vegetation on flow motion was represented by additional inertial and drag forces. The new model was validated by available experimental data for open channel flows passing through vegetated areas with different vegetation size, density and distribution. Numerical results are in good agreement with the experimental data. Finally, the flow around a supposed isolated vegetated pile was simulated and the effects of vegetation density on the wake flow were discussed. It is found that the presence of vegetation, even at a very low density, has the pronounced influence on the dissipation of flow energy, both inside the vegetation domain and outside it in the wake flow region.

关键词： numerical simulation vegetation open channel

A Comparative Study of Boron and Phosphorus Doping Effects in SiC: H Films Prepared by ECR-CVD

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Journal of Materials Science & technology 1998年第1期14卷 65-71页

作者： S.F. Yoon (School of Electrical and Electronic Engineering, Nanyang Technological university, Nanyang Avenue,singapore 639798, Rep. of singapore) School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore

Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, and using diborane and phosphine as doping gases. The effects of changes in the microwave power on the deposition rate and optical bandgap were investigated, and variations in the photoand dark-conductivities and activation energy were studied in conjunction with film analysis using the Raman scattering technique. In the case of boron-doped samples, the conductivity increased rapidly to a maximum, followed by rapid reduction at high microwave power. The ratio of the photo- to dark-conductivity (σph/σd) peaked at microwave power of ~600 W. Under conditions of high microwave power, Raman scattering analysis showed evidence of the formation and increase in the silicon microcrystalline and diamond-like phases in the films, the former of which could account for the rapid increase and the latter the subsequent decrease in the *** the case of phosphorusdoped SiC:H samples, it was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the films which occurred in correspondence to a rapid increase in the conductivity and reduction in the activation energy The conductivity increase stabilised in samples deposited at microwave power exceeding 500 W probably as a result of dopant saturation. Results from Raman scattering measurements also showed that phosphorus doping had the effect of enhancing the formation of the silicon microcrystals in the film whereas the presence of boron had the effect of preserving the amorphous structure.

关键词： ECR A Comparative Study of Boron and Phosphorus Doping Effects in SiC H Films Prepared by ECR-CVD

Optical and Structural Properties of In_(0.52)Al_(0.48)As/InP Structures Grown at Very High Arsenic Overpressures by Molecular Beam Epitaxy

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Journal of Materials Science & technology 1998年第3期14卷 231-235页

作者： S.F. Yoon(School of Electrical and Electronic Engineering, Nanyang Technological university, Nanyang Avenue,singapore 639798, Rep. of singapore School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore

Growth of ln0.52Al0.48As epitaxial layers on lnP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressures (V/III flux ratios from 30 to 300) has been carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) shows a strong and prominent dependence of the PL and XRD linewidths on the V/III flux ratio. Under our growth conditions, both the PL and XRD linewidths exhibit a minimum point at a V/III flux ratio of 150 which corresponds to a maximum in the PL intensity and XRD intensity ratio. Flux ratios exceeding 150 result in an increase in both the PL and XRD linewidths corresponding to a reduction in their associated intensities. Room temperature Raman scattering measurements show a narrowing in the lnAs-like and AlAs-like longitudinal-optic (LO)phonon linewidths which broaden at high flux ratios, while the LO phonon frequencies exhibit a gradual reduction as the flux ratio is increased. PL spectra taken at increasing temperatures show a quenching of the main emission peak followed by the evolution of a broad lower energy emission which is possibly associated with deep lying centres. This effect is more prominent in samples grown at lower V/III flux ratios. Hall effect measurements show a gradual reduction in the mobility in correspondence to an increase in the electron concentration as the flux ratio is increased.

关键词： As/InP Structures Grown at Very High Arsenic Overpressures by Molecular Beam Epitaxy InP Optical and Structural Properties of In Al

Rate-oriented perceptual image coding using contrast-based quantization

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Chinese Optics Letters 2010年第4期8卷 381-383页

作者：余卫宇田菁 School of Electronic and Information Engineering South China University of Technology School of Electrical and Electronic Engineering Nanyang Technological University

A new image coding approach is proposed by controlling the quantization step via minimizing the perceptual distortions（in terms of image＇s contrast measurement）.The proposed method is a rate-oriented contrast-based approach,which is in contrast to the conventional quality-oriented contrast-based image *** algorithm achieves a higher perceptual quality performance against several methods developed previously.

关键词： Visual communication