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Preparation and Characterization of Sol-gel Derived CH_3.iO_(3.2)-SiO_2 Thick Film

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Journal of Materials Science & Technology 1998年第6期14卷 523-526页

作者： Bing CAO and Congshan ZHU(shanghai institute of optics and {3. mechanics, chinese Academy of sciences, shanghai 201800, china) shanghai institute of optics and {3. mechanics Chinese Academy of Sciences Shanghai 201800 China

A large size CH3.iO3.2-SiO2 self sustained film with the thickness ranging from 50 to 1000 μm was prepared through sol-gel method by adopting CH3.i(OC2H5)3.and Si(OC2H5) as *** this paper, the preparation processes of this thick film are discussed in detail and XRD technique was adopted for the identification of oligomer solution. Also, IR and AFM techniques were used to investigate the film structure and surface morphology

关键词： Preparation and Characterization of Sol-gel Derived CH3.iO MTES CH

Transverse patterns and spatiotemporal instability of a photorefractive oscillator

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chinese Science Bulletin 1997年第9期42卷 724-729页

作者： ZHUANG Jun and TAN Weihan1. shanghai institute of optics and {3. mechanics, chinese Academy of sciences, shanghai 201800, china 2. shanghai University, shanghai 201800, china shanghai institute of optics and {3. mechanics Chinese Academy of Sciences Shanghai China shanghai University Shanghai China

IN time realm,instability and chaos phenomena of a nonlinear optical system have been dis-cussed *** recent years,as much interest was attracted to the transverse ef-fects in nonlinear optics,the study was developed t... 详细信息

关键词： photorefractive oscillator spatiotemporal instability transverse patterns.

Effect of Initialization Technical Parameters on Optical Absorption of Ge_2Sb_2Te_5 Thin Films

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Journal of Materials Science & Technology 2004年第5期20卷 509-511页

作者： Ming FANG, Qinghui LI and Fuxi GANshanghai institute of optics and {3. mechanics, chinese Academy of sciences, shanghai 201800, china Inst. of optics and fine Mech. Chinese Acad. of Sci. Shanghai 201800 China

The optical absorption properties of phase-change optical recording thin films subjected to various initialization conditions were investigated. The effects of initialization power and velocity on optical constants of the Ge2Sb2Te5 thin films were also studied. The energy gap of Ge2Sb2Te5 thin films subjected to various initialization conditions was also obtained. It was found that the optical energy gap of the Ge2Sb2Te5 thin films increased with either increasing initialization laser power or decreasing initialization velocity, with peak of 0.908 eV at laser power of 1000 mW or initialization velocity of 4.0 m/s, but the continued increasing initialization laser power or decreasing initialization velocity resulted in the decrease of the optical energy gap. The change of the optical energy gap was discussed on the basis of amorphous crystalline transformation.

关键词： Phase transformation Optical recording Ge2Sb2Te5 Optical absorption Energy gap

Some considerations of organic materials for high density optical disk data storage

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chinese Science Bulletin 2000年第6期45卷 572-576页

作者： GAN Fuxishanghai institute of optics and {3. mechanics, chinese Academy of sciences, shanghai 201800, china shanghai institute of optics and {3. mechanics Chinese Academy of Sciences Shanghai China

The application possibilities of organic materials for high density optical disk data storage are discussed. Several points, such as physical and chemical stabilities, wavelength match and reversible property changes,... 详细信息

关键词： organic materials high density optical disk.

Influence of Transited Layer of Multilayer on X-ray Diffraction Intensity and Calculation of the Thickness

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chinese Journal of Lasers 2000年第2期9卷 134-139页

作者： FENG Shimeng YI Kui ZHAO Qiang TANG Zaosen FAN Zhengxiou (shanghai institute of optics and {3. mechanics, The chinese Academy of sciences, shanghai 201800, china) 中科院上海光学精密机械所上海

This paper integrates the roughness with the diffuse layer as a transited layer factor for study of influence of the practical interface on the X-ray diffraction intensity of multilayer. By the study of a simple model of transited layer presented in this paper, it is given a formula to describe the quantitative relation of the transited layer with the X-ray diffraction intensity. The calculated thickness of transited layer of Mo/Si multilayer is given, which is consisted with the values measured with the high resolution microscopy.

关键词： transited layer diffraction intensity multilayer

Open Raman Cell to Avoid Window Damage

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chinese Journal of Lasers 1999年第6期8卷 3-5页

作者： XU Jianqiu LOU Qihong DONG Jingxing WEI Yunrong (shanghai institute of optics and {3. mechanics, chinese Academy of sciences, shanghai 201800, china) 中科院上海光学精密机械所上海

An open Raman cell was designed to avoid the window damage in high power Raman amplifiers. The conversion efficiency and the beam quality of the Stokes pulse were measured as a function of time when Raman gases flowed out from the Raman cell. The effects of Raman gas density and diameter of Raman cell on the specification were also discussed. The results showed that this open Raman cell was useful for high power Raman system.

关键词： Raman cell window damage Raman amplifier

Photoinduced Phenomena in Amorphous Ge-As-S System

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chinese Journal of Lasers 2002年第1期11卷 40-45页

作者： LIU Qiming GU Donghong HUANG Mingju GAN Fuxi (shanghai institute of optics and {3. mechanics, The chinese Academy of sciences, shanghai 201800, china) shanghai institute of optics and {3. mechanics The Chinese Academy of Sciences 上海 201800

X-ray diffraction and reflectivity as well as transmittance on Ge-As-S bulk and thin films were performed. It was observed photodarkening in Ge-As-S thin films with band gap light illumination from an argon laser of 514.5 nm wavelength and shifting the optical transmittance edge to shorter wavelength, the magnitude of which increases with the increase of the intensity of illumination light. In the Ge-As-S bulk, however, it was not observed photodarkening. Photodarkening in Ge-As-S system was discussed.

关键词： Ge-As-S bulk and thin film band gap light illumination photodarkening

Simulation of Electron Temperature in Argon Clusters Subjected to Intense Laser Fields

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chinese Journal of Lasers 2000年第3期9卷 72-77页

作者： LEI Anle NI Guoquan LI Zhong XU Zhizhan (shanghai institute of optics and {3. mechanics, The chinese Academy of sciences, shanghai 201800, china) 中科院上海光学精密机械所上海

Argon clusters subjected to intense femtosecond laser pulses are ionized by the optical fields and inelastic electron-ion collisions. The cluster plasmas absorb the laser energy through collisional inverse bremsstrahlung, leading the argon cluster plasmas to very hot states. The calculated electron temperature in the clusters indicates that the intense laser-cluster interactions are more energetic than interactions with molecules.

关键词： argon cluster intense laser electron temperature

Ionization and Harmonic Generation of Diatomic Molecular Ion

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chinese Journal of Lasers 1997年第1期B6卷 43-48页

作者： LI Xuexin XU Zhizhan(shanghai institute of optics and {3. mechanics,chinese Academy of sciences,shanghai 201800) shanghai Inst of optics and fine Mechanics Chinese Acad of Sciences Shanghai China

By solving numerically the one-dimensional time-dependent Schrodinger equation, we have studied the effect of internuclear separation of diatomic molecular ion on ionization and high-order harmonic generation. The results reveal that when the internuclear seperation is small, both the ionization and the harmonic generation are weak, with the increasing of the separation, the ionization increases quickly, around some vaiue the ionization reaches a peak which is greater than what it is at small and large distances. Before the ionization reaches its maximum value, there is a reperation range where the harmonic generation is strongest, after the ionization reaches its peak value, the harmonic generation is decreased or eliminated. With the increasing of the separation further, the ionization becomes weak and the harmonic generation recovers to it's high level.

关键词： high-order harmonic generation internuclear separation diatomic molecular ion