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Determination of Young's modulus by nanoindentation

Science china(Technological Sciences) 2004年第4期47卷 398-408页

作者： MA Dejun1, Chung Wo Ong2. LIU Jianmin1 & HE Jiawen3 1. Surface Engineering research Institute, CMES, Beijing 100072. china {2., the hong kong polytechnic university, hong kong, china 3. State Key Laboratory for Mechanical Behavior of materials, Xian Jiaotong university, Xian 710049, china 1. Surface Engineering research Institute CMES 100072 Beijing China 2. department of applied physics and materials research center The Hong Kong Polytechnic University Hong Kong China 3. State Key Laboratory for Mechanical Behavior of materials Xi’an Jiaotong University 710049 Xi’an China

A methodology for determining Youngs modulus of materials by non-ideally sharp indentation has been developed. According to the principle of the same area-to-depth ratio, a non-ideally pyramidal indenter like a Berkovich one can be approximated by a non-ideally conical indenter with a spherical cap at the tip. By applying dimensional and finite element analysis to the non-ideally conical indentation, a set of approximate one-to-one relationships between the ratio of nominal hardness/reduced Youngs modulus and the ratio of elastic work/total work, which correspond to different tip bluntness, have been revealed. The nominal hardness is defined as the maximum indentation load divided by the cross-section area of the conical indenter specified at the maximum indentation depth. As a consequence, Youngs modulus can be determined from a nanoindentation test only using the maximum indentation load and depth, and the work done during loading and unloading processes. The new method for determining Youngs modulus is referred to as pure energy method. The validity of the method was examined by performing indentation tests on five materials. The experimental results and the standard reference values are in good agreement, indicating that the proposed pure energy method is a promising substitution for the most widely used analysis models at present.

关键词： Young's modulus, nanoindentation, nominal hardness, indentation work.

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Reflections on the Mechanism of Calcium Phosphate Nucleation on Titanium in Simulated Body Fluids

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Journal of materials Science & Technology 2005年第5期21卷 613-617页

作者： F.T.Chengdepartment of applied {2., the hong kong polytechnic university, hong kong, china department of applied {2. Hong Kong Polytechnic University Hong Kong Hong Kong

The results and main findings of studies reported in the literature in relation to the deposition of calcium phosphate on Ti in simulated body fluids are summarized. The effects of the surface hydroxyl groups and the sign of surface charge on the nucleation of calcium phosphate are reviewed. One major controversy among the conclusions of different studies is the order of adsorption of the calcium ions and the phosphate ions in the initial stage of immersion. A simple model based on the amphoteric nature of the hydroxyl groups on Ti is proposed in an attempt to delineate the nucleation process for calcium phosphate on Ti in simulated body fluids. HPO4^2. ions interact with the hydroxyl groups via ion exchange and/or electrostatic attraction, and Ca^2. ions, via electrostatic attraction only. There is no preferential order of adsorption. Seemingly inconsistent results in different studies possibly arise from different prior treatments of the samples, which affect the adsorption properties.

关键词： Titanium Calcium phosphate Simulated body fluid Hydroxyl group Point of zero charge Surface charge

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Controllable synthesis of one-dimensional silicon nanostructures based on the dual effects of electro-deoxidation and the Kirkendall effect

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Nano research 2024年第9期17卷 7814-7823页

作者： Jianxin Tu Shuo Yu Kui Hao Le Sun Ruicheng Bai Fangzhou Zhang Aijun Li hong Liu Institute of materials School of Materials Science and EngineeringShanghai UniversityShanghai 200444China department of applied {2. The Hong Kong Polytechnic UniversityKowloon 999077Hong KongChina Shaoxing institute of technology Shanghai UniversityShanghai 200444China

In this study,we successfully synthesized silicon nanotubes(Si-NTs)and silicon nanowires(Si-NWs)in a controllable manner using a catalyst-and template-free method through the direct electrolysis of SiO_(2.in a molten CaCl_(2.-CaO system,while also proposing a novel formation mechanism for ***-NWs are formed through electro-deoxidation when the cell voltage is within the range of CaO decomposition voltage and SiO_(2.decomposition *** subsequently adjusting the voltage to a value between the decomposition potentials of CaCl_(2.and CaO,in-situ electro-deoxidation of CaO takes place on the surface of the synthesized Si-NWs,leading to the formation of a Ca *** formation of Ca-Si diffusion couple leads to the creation of vacancies within the Si-NWs,as the outward diffusion rate of Si exceeds the inward diffusion rate of *** differential diffusion rates between Si and Ca in a diffusion couple exhibit an analogy to the Kirkendall *** vacancies gradually accumulate and merge,forming large voids,which ultimately result in the formation of hollow *** a subsequent dealloying process,the removal of the embedded calcium leads to the formation of *** the application of a carbon coating,the Si-NTs@C composite showcases a high initial discharge capacity of 32.1 mAh·g^(-1)at 1.5 A·g^(-1)and exhibits exceptional long-term cycling stability,maintaining a capacity of 977 mAh·g^(-1)after 2.00 cycles at 3.0 A·g^(-1).

关键词： silicon nanotubes silicon nanowires lithium-ion battery Kirkendall effect

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Enhancement of Magnetoelectric Coupling Effects in Ferroelectric/Magnetic Composites through Microstructure Modification

Enhancement of Magnetoelectric Coupling Effects in Ferroelec...

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2.11中国材料研讨会

作者： L.Sun,Y.Wang,H.L.W.Chan department of applied {2. and materials research center,The hong kong polytechnic university

＜正＞In this work we have investigated the influence of microstructure on magnetoelectric （ME） coupling effects in magnetoelectric composites made of a ferroelectric （piezoelectric） and a

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High-Quality van der Waals Epitaxial CsPbBr3 Film Grown on Monolayer Graphene Covered TiO2.for High-Performance Solar Cells

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Energy & Environmental materials 2024年第4期7卷 239-246页

作者： Zhaorui Wen Chao Liang Shengwen Li Gang Wang Bingchen He Hao Gu Junpeng Xie Hui Pan Zhenhuang Su Xingyu Gao Guo hong Shi Chen Institute of applied physics and {2. Engineering University of Macau MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter State Key Laboratory for Mechanical Behavior of Materials School of Physics Xi'an Jiaotong University Shanghai Institute of applied physics Chinese Academy of Sciences department of materials Science and Engineering & {2. of Super-Diamond and Advanced Films City University of Hong Kong

Two-dimensional materials have been widely used to tune the growth and energy-level alignment of ***,their incomplete passivation and chaotic usage amounts are not conducive to the preparation of highquality perovskite ***,we succeeded in obtaining higher-quality CsPbBr3films by introducing large-area monolayer graphene as a stable physical overlay on top of TiO2.ubstrates.

关键词： all-inorganic perovskite solar cells buried interface modification monolayer graphene van der Waals epitaxial growth

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Roadmap for rechargeable batteries:present and beyond

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Science china Chemistry 2024年第1期67卷 13-42页

作者： Sen Xin Xu Zhang Lin Wang Haijun Yu Xin Chang Yu-Ming Zhao Qinghai Meng Pan Xu Chen-Zi Zhao Jiahang Chen Huichao Lu Xirui kong Jiulin Wang Kai Chen Gang Huang Xinbo Zhang Yu Su Yao Xiao Shu-Lei Chou Shilin Zhang Zaiping Guo Aobing Du Guanglei Cui Gaojing Yang Qing Zhao Liubing Dong Dong Zhou Feiyu Kang Hu hong Chunyi Zhi Zhizhang Yuan Xianfeng Li Yifei Mo Yizhou Zhu Dongfang Yu Xincheng Lei Jianxiong Zhao Jiayi Wang Dong Su Yu-Guo Guo Qiang Zhang Jun Chen Li-Jun Wan CAS Key Laboratory of Molecular Nanostructure and Nanotechnology CAS Research/Education Center for Excellence in Molecular SciencesBeijing National Laboratory for Molecular Sciences(BNLMS)Institute of ChemistryChinese Academy of Sciences(CAS)Beijing 100190China university of Chinese Academy of Sciences.Beijing 100049 China Institute of Advanced Battery materials and Devices Faculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China Key Laboratory of Advanced Functional materials Ministry of EducationBeijing University of TechnologyBeijing 100124China Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology Department of Chemical EngineeringTsinghua UniversityBeijing 100084China State Key Laboratory of Chemistry and Utilization of Carbon-Based Energy Resources College of ChemistryXinjiang UniversityUrumqi 830046China department of Chemical Engineering Shanghai Jiao Tong UniversityShanghai 200240China State Key Laboratory of Rare Earth Resource Utilization Changchun Institute of Applied ChemistryChangchun 130022China Institute for Carbon Neutralization College of Chemistry and Materials EngineeringWenzhou UniversityWenzhou 325035China School of Chemical Engineering and Advanced materials The University of AdelaideAdelaide 5000Australia Qingdao Industrial Energy Storage research Institute Qingdao Institute of Bioenergy and Bioprocess TechnologyChinese Academy of SciencesQingdao 266101China Frontiers Science center for New Organic Matter Key Laboratory of Advanced Energy Materials Chemistry(Ministry of Education)College of ChemistryNankai UniversityTianjin 300071China College of Chemistry and materials Science Jinan UniversityGuangzhou 511443China Tsinghua Shenzhen International Graduate School Tsinghua UniversityShenzhen 518055China department of materials Science and Engineering City University of Hong KongHong Kong 999077China Division of Energy Storage Dalian National Laboratory for Clean Energy(DNL)Dalian Institute of Chem

Rechargeable batteries currently hold the largest share of the electrochemical energy storage market,and they play a major role in the sustainable energy transition and industrial decarbonization to respond to global climate *** to the increased popularity of consumer electronics and electric vehicles,lithium-ion batteries have quickly become the most successful rechargeable batteries in the past three decades,yet growing demands in diversified application scenarios call for new types of rechargeable *** efforts are made to developing the next-generation post-Li-ion rechargeable batteries,which include,but are not limited to solid-state batteries,lithium–sulfur batteries,sodium-/potassium-ion batteries,organic batteries,magnesium-/zinc-ion batteries,aqueous batteries and flow *** the great achievements,challenges persist in precise understandings about the electrochemical reaction and charge transfer process,and optimal design of key materials and interfaces in a *** roadmap tends to provide an overview about the current research progress,key challenges and future prospects of various types of rechargeable *** computational methods for materials development,and characterization techniques will also be discussed as they play an important role in battery research.

关键词： energy storage rechargeable batteries battery materials electrochemistry

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Achieving exceptional activity and durability toward oxygen reduction based on a cobalt-free perovskite for solid oxide fuel cells

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Journal of Energy Chemistry 2021年第11期30卷 653-659,I0016页

作者： Feifei Dong Zhenghui Gao Bingkai Zhang Lu Li Ziqi kong Zilin Ma Meng Ni Zhan Lin Guangzhou Key Laboratory of Clean Transportation Energy Chemistry School of Chemical Engineering and Light IndustryGuangdong University of TechnologyGuangzhou Higher Education Mega CenterGuangzhou 510006GuangdongChina Building Energy research Group Department of Building and Real EstateThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong 999077China

In response to the shortcomings of cobalt-rich cathodes, iron-based perovskite oxides appear as promising alternatives for solid oxide fuel cells (SOFCs). However, their inferior electrochemical performance at reduced temperatures (2.)Fe_(0.875)Ga_(0.12.)O_(3−δ) (BSFG) is developed as an efficient oxygen reduction electrode for SOFCs, featuring cubic-symmetry structure, large oxygen vacancy concentration and fast oxygen transport. Benefiting from these merits, cells incorporated with BSFG achieve exceptionally high electrochemical performance, as evidenced by a low polarization area-specific resistance of 0.074 Ω cm^(2. and a high peak power density of 1145 mW cm^(−2. at 600 ℃. Meanwhile, a robust short-term performance stability of BSFG cathode can be ascribed to the stable crystalline structure and favorable thermal expansion behavior. First-principles computations are also conducted to understanding the superior activity and durability toward oxygen reduction reaction. These pave the way for rationally developing highly active and robust cobalt-free perovskite-type cathode materials for reduced-temperature SOFCs.

关键词： Solid oxide fuel cell Cathode Perovskite Oxygen reduction reaction Cobalt-free

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Purification of copper foils driven by single crystallization

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Chinese physics B 2024年第2期33卷 506-511页

作者：寇金宗赵孟泽李兴光何梦林杨方友刘科海成庆秋任云龙刘灿付莹吴慕鸿刘开辉王恩哥 Songshan Lake materials Laboratory Dongguan 523808China Beijing National Laboratory for Condensed Matter physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum materials School of PhysicsSouth China Normal UniversityGuangzhou 510006China Guangdong–hong kong Joint Laboratory of Quantum Matter Frontier Research Institute for PhysicsSouth China Normal UniversityGuangzhou 510006China State Key Laboratory for Mesoscopic physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Key Laboratory of Quantum State Construction and Manipulation(Ministry of Education) Department of PhysicsRenmin University of ChinaBeijing 100872China International center for Quantum materials Collaborative Innovation Center of Quantum MatterPeking UniversityBeijing 100871China School of physics Liaoning UniversityShenyang 110036China

High-purity copper(Cu) with excellent thermal and electrical conductivity, is crucial in modern technological applications, including heat exchangers, integrated circuits, and superconducting magnets. The current purification process is mainly based on the zone/electrolytic refining or anion exchange, however, which excessively relies on specific integrated equipment with ultra-high vacuum or chemical solution environment, and is also bothered by external contaminants and energy consumption. Here we report a simple approach to purify the Cu foils from 99.9%(3N) to 99.99%(4N) by a temperature-gradient thermal annealing technique, accompanied by the kinetic evolution of single crystallization of *** success of purification mainly relies on(i) the segregation of elements with low effective distribution coefficient driven by grain-boundary movements and(ii) the high-temperature evaporation of elements with high saturated vapor *** purified Cu foils display higher flexibility(elongation of 70%) and electrical conductivity(104% IACS) than that of the original commercial rolled Cu foils(elongation of 10%, electrical conductivity of ~ 100% IACS). Our results provide an effective strategy to optimize the as-produced metal medium, and therefore will facilitate the potential applications of Cu foils in precision electronic products and high-frequency printed circuit boards.

关键词： purification copper foil thermal annealing technique single crystallization

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Impurity-limited quantum transport variability in magnetic tunnel junctions

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Frontiers of physics 2017年第4期12卷 147-152页

作者： Jianing Zhuang Yin Wang Yan Zhou Jian Wang hong Guo department of physics and the {2. of Theoretical and Computational physics The University of Hong Kong Pokfulam Road Hong Kong SAR China Institute of Textiles and Clothing Hong Kong Polytechnic University Kowloon Hong Kong SAR China The university of hong kong Shenzhen Institute of {2. and Innovation Shenzhen 518057 China center for the physics of {2. and department of physics McGill University Montreal PQ Canada H3A 2T8

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions （MTJ）. In particular, we calculated the tunnel magnetoresistance ratio （TMR） and the average values and variances of the currents and spin transfer torque （STT） of an interfacially doped Fe/MgO/Fe MTJ. Further, we predicted that N-doped MgO can improve the performance of a doped Fe/MgO/Fe MTJ. Our first- principles calculations of the fluctuations of the on/off currents and STT provide vital information for future predictions of the long-term reliability of production. spintronic devices, which is imperative for high-volume

关键词： megnetic tunnel junctions tunnel magnetoresistance first principles NEGF-DFT

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Two-dimensional materials for future information technology: status and prospects

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Science china(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang kong Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of physics and Key Lab of Quantum materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory department of applied {2. The Hong Kong Polytechnic University Key Laboratory for Micro-Nano physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2.) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2. materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2. materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2. materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2. material research.

关键词： two-dimensional (2.) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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