检索结果-南通市图书馆

Theory and verification of operator design methodology

在线全文

学校读者我要写书评

暂无评论

Science china(Information Sciences) 2012年第2期55卷 480-490页

作者： HU ZiYi1,ZHAO Yong1,WANG XinAn1,HUANG Ru2,WANG Teng1 & ZHANG Xing2 1Key Lab of Integrated Microsystem Science and Engineering Applications,peking university Shenzhen Graduate School,Shenzhen 518055,china 2institute of microelectronics,peking university,beijing 100871,china 1. Key Lab of Integrated Microsystem Science and Engineering Applications Peking University Shenzhen Graduate School Shenzhen 518055 China2. Institute of Microelectronics Peking University Beijing 100871 China

Non-recurring-engineering(NRE)and time-to-market play an increasingly important role in the field of IC ***,with the continuous development of IC manufacturing technology,it is necessary to propose a novel design methodology to shorten design cycle and enhance design *** this paper,operator design methodology(ODM)is presented and an H.264 encoder is implemented as a *** to the flow of ODM,the register transfer level(RTL)design of H.264 encoder has been accomplished with 15 man-months,which is lower than the average 19 man-months in the field of traditional application specific integrated circuit(ASIC)***,with the advantage of operator design library,the design has a comparable performance with other ASIC *** obtained design can support a real-time video encoding of 720p at 60 frames per second or 1080p at 30 frames per second,working at 167 MHz with SMIC 0.13 μm CMOS *** results provide good evidence for the practicability and efficiency of ODM.

关键词： operator design methodology H.264 encoder integrated circuit hardware

Hybrid microsystem with functionalized silicon substrate and PDMS sample operating microchannel: A reconfigurable microfluidics scheme

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science china(Technological Sciences) 2010年第8期53卷 2272-2277页

作者： LEI YinHua 1 ,XIE Fei 1 ,WANG Wei 1,2 ,WANG HaiBin 3 &LI ZhiHong 1,2 1 institute of microelectronics,peking university,beijing 100871,china 2National Key Laboratory of Science and Technology on Micro/Nano Fabrication,beijing 100871,china 3 No.302 Hospital,beijing 100039,china 1. institute of microelectronics Peking University Beijing 100871 China2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing 100871 China3. No. 302 Hospital Beijing 100039 China

A hybrid microsystem with separately functioned temperature controlling substrate and sample operating fluidic microchannel was developed to demonstrate a reconfigurable microfluidics *** temperature controlling substrate integrated a micro heater and a temperature sensor by using traditional silicon-based micromechanical system(MEMS)technique,which guaranteed high performance and robust reliability for repeatable *** sample operating fluidic microchannel was prepared by poly-(dimethylsiloxane) (PDMS)based soft lithography technique,which made it cheap enough for disposable *** PDMS microchannel chip was attached to the temperature controlling substrate for reconfigurable thermal applications.A thin PDMS film was used to seal the microchannel and bridge the functionalized substrate and the sample inside the channel,which facilitated heat transferring and prevented sample contaminating the temperature controlling *** by a one dimensional thermal resistance model,the thin PDMS film was important for the present reconfiguration *** performance of this hybrid microsystem was examined,and the experimental results demonstrated that the chip system could work stably over hours with temperature variation less than *** PDMS microchannel chips were tested on one heating substrate sequentially with a maximum intra-chip temperature difference of *** extracted from serum of a chronic hepatitis B virus(HBV)patient was amplified by this hybrid microsystem and the gel electrophoresis result indicated that the present reconfigurable microfluidic scheme worked successfully.

关键词： reconfigurable microfluidics hybrid microdevice thin PDMS film

Development of packaging technologies for microsystems

在线全文

学校读者我要写书评

暂无评论

微纳电子技术 2003年第7期40卷 207-207页

作者： JIN Yu feng 1,2 ,WANG Zhen feng 1,WEI Jun 1 (1. Singapore institute of Manufacturing Technology,Singapore638075 2 institute of microelectronics,peking university,beijing100871china) Singapore institute of Manufacturing Technology Singapore 638075 institute of microelectronics Peking University Beijing 100871 China Singapore institute of Manufacturing Technology Singapore 638075

It is well known that packaging plays a very important role in developing microsystems. Packaging accounts for about 60%～80% of cost and function of a microsystem. Package is required to provide mechanical protection... 详细信息

关键词：微机电系统封装技术 MEMS 立体封装胶合

The driving force for development of IC and systemin future: Reducing the power consumption andimproving the ratio of performance to powerconsumption

在线全文

学校读者我要写书评

暂无评论

Science china(Information Sciences) 2011年第5期54卷 915-935页

作者： WANG YangYuan institute of microelectronics, peking university, beijing 100871, china 1. institute of microelectronics Peking University Beijing 100871 China

With the development of information technology, integrated circuits (IC) and system which target high performance and low power consumption have widely penetrated to all the aspects of national economy, national defense construction and people’s life. With the continuous increase in IC integration density, the power consumption is becoming the limiting factor. It turns out that the driving force of the future IC and system development is the reduction of the power consumption and improvement of the performance/power ratio. The Moore’s Law is inherently the law for the technology and economic development, and has served as the guideline of the IC development for half a century. However, with the scaling down of IC feature size and the corresponding increased integration density, it is progressively approaching the physical limitation. Moore’s Law will gradually complete its historic mission and it will be replaced by a law of reducing the power consumption while ensuring the performance requirements for IC, SoC and SiP performance, law of improving the performance/power ratio. This paper will discuss the related research topics on Green micro/nanoelectronics, including low-power design, novel low-power devices, manufacturing processes for low power applications and related micro/nano electromechanical systems.

关键词： power consumption IC technology

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science china(Information Sciences) 2011年第8期54卷 1756-1761页

作者： DU Gang,LIU XiaoYan & HAN RuQi institute of microelectronics,peking university,beijing 100871,china 1. institute of microelectronics Peking University Beijing 100871 China

The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier n-MOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and f *** significant dependence of f T and f max on gate voltage and weak dependence on barrier height are ***,the significant dependence of g m and g ds on both gate voltage and SB height are shown. Moreover,the scalability of f T is outstanding and close to the ideal case (f T ∝ 1/L2g ). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs,C gd and C *** ballistic transport limit the f T and f max are almost 10 times *** Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.

关键词： Monte Carlo ultra thin body (UTB) Schottky-barrier MOSFETs (SB-MOSFETs) high frequency

A novel voltage-type sense amplifier for low-power nonvolatile memories

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science china(Information Sciences) 2010年第8期53卷 1676-1681页

作者： LI Ming , KANG JinFeng & WANG YangYuan institute of microelectronics, peking university, beijing 100871, china 1. institute of microelectronics Peking University Beijing 100871 China

Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-type sense amplifier is designed to achieve both the reduced reading power and the improved reliability. Compared to the conventional voltage-type sense amplifier, the additional capacitor and current limiter are introduced in the novel voltage-type sense amplifier to reduce the reading power and to improve the reading reliability. The simulations show that the reading power and reliability of our voltage-type sense amplifier are superior to the previously reported voltage-type sense amplifier without speed loss but with only a little increased area. A testing chip has been fabricated based on 0.18 μm EEPROM technology to verify the design. The novel voltage-type sense amplifier can be implemented to the low-power nonvolatile memory embedded in RFID transponder.

关键词： sense amplifier nonvolatile memory transponder low-power

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science china(Information Sciences) 2011年第12期54卷 2693-2699页

作者： HE YanDong , ZHANG Xing & WANG YangYuan institute of microelectronics, peking university, beijing 100871, china 1. institute of microelectronics Peking University Beijing 100871 China

The gate leakage current and reliability concern become more serious due to the aggressive scaling-down of the gate oxide thickness. Developing advanced gate dielectrics process for mass production is essential in china. In this paper, the gate leakage current reduction and reliability optimization for plasma nitridation SiON aimed at 65 nm node CMOS application was explored. A three-step fabrication process based on single wafer tools for plasma nitridation SiON has been demonstrated. The effects of each process condition on the electrical and reliability characteristics of plasma nitridation SiON have been investigated in terms of nitrogen concentration, equivalent oxide thickness(EOT), gate leakage current, mobility, time-dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). The optimized plasma nitrided oxide demonstrated good gate leakage reduction and high carrier mobility without sacrificing the reliability performance. This optimized plasma nitridation process has been implemented into the mass production to meet the throughput and reliability requirement.

关键词： plasma nitridation post-nitridation annealing gate leakage current NBTI TDDB

Modeling and simulation of a novel vertical actuator based on electrowetting on dielectric

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Acta Mechanica Sinica 2009年第5期25卷 669-675页

作者： Ping An Jing Chen Yilong Hao National Key Laboratory of Micro/Nano Fabrication Technology,institute of microelectronics, peking university,100871 beijing, china National Key Laboratory of Micro/Nano Fabrication Technology Institute of Microelectronics Peking University 100871 Beijing China

A novel vertical actuator based on electrowetting on dielectric （EWOD） was designed, analyzed and simulated. Modeling results indicated that the vertical driving force of the actuator obeyed a second order polynomial of applied voltage, which was verified by Covent_ware 2006. As a resuit, the vertical driving force of the EWOD actuator with a 1.1 nL droplet and a 1.75 μm thick polymer was about 0.5 μN under an applied voltage 100V which was comparable to that of the electrostatic actuators. Moreover, the noise from plane forces we analyzed and simulated was very low. Therefore, we made a conclusion that the EWOD actuator can be used in MEMS transducer.

关键词： Wetting - EWOD Driving force Actuator

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

在线全文

学校读者我要写书评

暂无评论

Science china(Information Sciences) 2011年第2期54卷 396-406页

作者： CHEN KenLe & ZHANG JinWen National Key Laboratory of Micro/Nano Fabrication Technology, institute of microelectronics, peking university, beijing 100871, china 1. National Key Laboratory of Micro/Nano Fabrication Technology Institute of Microelectronics Peking University Beijing 100871 China

Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3D and HFSS simulation, showing that the insertion loss is reduced by around 13% when the bridge width is three times of transmission line width. Further, the inffuence of switch’s structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge’s lower surface can be expected to have broad applications in the future.

关键词： RF MEMS switch insertion loss fringing capacitance dielectric layer