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The driving force for development of IC and systemin future: Reducing the power consumption andimproving the ratio of performance to powerconsumption

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Science China(Information Sciences) 2011年第5期54卷 915-935页

作者： WANG YangYuan institute of microelectronics, peking university,{3., China 1. institute of microelectronics Peking University Beijing 100871 China

With the development of information technology, integrated circuits (IC) and system which target high performance and low power consumption have widely penetrated to all the aspects of national economy, national defense construction and people’s life. With the continuous increase in IC integration density, the power consumption is becoming the limiting factor. It turns out that the driving force of the future IC and system development is the reduction of the power consumption and improvement of the performance/power ratio. The Moore’s Law is inherently the law for the technology and economic development, and has served as the guideline of the IC development for half a century. However, with the scaling down of IC feature size and the corresponding increased integration density, it is progressively approaching the physical limitation. Moore’s Law will gradually complete its historic mission and it will be replaced by a law of reducing the power consumption while ensuring the performance requirements for IC, SoC and SiP performance, law of improving the performance/power ratio. This paper will discuss the related research topics on Green micro/nanoelectronics, including low-power design, novel low-power devices, manufacturing processes for low power applications and related micro/nano electromechanical systems.

关键词： power consumption IC technology

High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

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Science China(Information Sciences) 2011年第8期54卷 1756-1761页

作者： DU Gang,LIU XiaoYan & HAN RuQi institute of microelectronics,peking{3.,beijing 100871,China 1. institute of microelectronics Peking University Beijing 100871 China

The high frequency performances of nano-scale ultra-thin-body (UTB) Schottky-barrier n-MOSFETs (SB-nMOSFETs) are investigated using 2D full-band self-consistent ensemble Monte Carlo method. The UTB SB-nMOSFET devices offer excellent RF performance with high values of f T and f *** significant dependence of f T and f max on gate voltage and weak dependence on barrier height are ***,the significant dependence of g m and g ds on both gate voltage and SB height are shown. Moreover,the scalability of f T is outstanding and close to the ideal case (f T ∝ 1/L2g ). The high frequency performances of 45 nm channel length SB-nMOSFETs at ballistic transport limit are also investigated. Results show that scattering strongly affects the capacitances C gs,C gd and C *** ballistic transport limit the f T and f max are almost 10 times *** Scattering effects in nano-scale SB-nMOSFETs cannot be neglected.

关键词： Monte Carlo ultra thin body (UTB) Schottky-barrier MOSFETs (SB-MOSFETs) high frequency

A novel voltage-type sense amplifier for low-power nonvolatile memories

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Science China(Information Sciences) 2010年第8期53卷 1676-1681页

作者： LI Ming , KANG JinFeng & WANG YangYuan institute of microelectronics, peking university,{3., China 1. institute of microelectronics Peking University Beijing 100871 China

Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-type sense amplifier is designed to achieve both the reduced reading power and the improved reliability. Compared to the conventional voltage-type sense amplifier, the additional capacitor and current limiter are introduced in the novel voltage-type sense amplifier to reduce the reading power and to improve the reading reliability. The simulations show that the reading power and reliability of our voltage-type sense amplifier are superior to the previously reported voltage-type sense amplifier without speed loss but with only a little increased area. A testing chip has been fabricated based on 0.18 μm EEPROM technology to verify the design. The novel voltage-type sense amplifier can be implemented to the low-power nonvolatile memory embedded in RFID transponder.

关键词： sense amplifier nonvolatile memory transponder low-power

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

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Science China(Information Sciences) 2011年第12期54卷 2693-2699页

作者： HE YanDong , ZHANG Xing & WANG YangYuan institute of microelectronics, peking university,{3., China 1. institute of microelectronics Peking University Beijing 100871 China

The gate leakage current and reliability concern become more serious due to the aggressive scaling-down of the gate oxide thickness. Developing advanced gate dielectrics process for mass production is essential in China. In this paper, the gate leakage current reduction and reliability optimization for plasma nitridation SiON aimed at 65 nm node CMOS application was explored. A three-step fabrication process based on single wafer tools for plasma nitridation SiON has been demonstrated. The effects of each process condition on the electrical and reliability characteristics of plasma nitridation SiON have been investigated in terms of nitrogen concentration, equivalent oxide thickness(EOT), gate leakage current, mobility, time-dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). The optimized plasma nitrided oxide demonstrated good gate leakage reduction and high carrier mobility without sacrificing the reliability performance. This optimized plasma nitridation process has been implemented into the mass production to meet the throughput and reliability requirement.

关键词： plasma nitridation post-nitridation annealing gate leakage current NBTI TDDB

Modeling and simulation of a novel vertical actuator based on electrowetting on dielectric

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Acta Mechanica Sinica 2009年第5期25卷 669-675页

作者： Ping An Jing Chen Yilong Hao National Key Laboratory of Micro/Nano Fabrication Technology,institute of microelectronics, peking university,{3. beijing, China National Key Laboratory of Micro/Nano Fabrication Technology Institute of Microelectronics Peking University 100871 Beijing China

A novel vertical actuator based on electrowetting on dielectric （EWOD） was designed, analyzed and simulated. Modeling results indicated that the vertical driving force of the actuator obeyed a second order polynomial of applied voltage, which was verified by Covent_ware 2006. As a resuit, the vertical driving force of the EWOD actuator with a 1.1 nL droplet and a 1.75 μm thick polymer was about 0.5 μN under an applied voltage 100V which was comparable to that of the electrostatic actuators. Moreover, the noise from plane forces we analyzed and simulated was very low. Therefore, we made a conclusion that the EWOD actuator can be used in MEMS transducer.

关键词： Wetting - EWOD Driving force Actuator

Hybrid microsystem with functionalized silicon substrate and PDMS sample operating microchannel: A reconfigurable microfluidics scheme

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Science China(Technological Sciences) 2010年第8期53卷 2272-2277页

作者： LEI YinHua 1 ,XIE Fei 1 ,WANG Wei 1,2 ,WANG HaiBin 3.&LI ZhiHong 1,2 1 institute of microelectronics,peking{3.,beijing 100871,China 2National Key Laboratory of Science and Technology on Micro/Nano Fabrication,beijing 100871,China 3.No.3.2 Hospital,beijing 10003.,China 1. institute of microelectronics Peking University Beijing 100871 China2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing 100871 China3. No. 302 Hospital Beijing 100039 China

A hybrid microsystem with separately functioned temperature controlling substrate and sample operating fluidic microchannel was developed to demonstrate a reconfigurable microfluidics *** temperature controlling substrate integrated a micro heater and a temperature sensor by using traditional silicon-based micromechanical system(MEMS)technique,which guaranteed high performance and robust reliability for repeatable *** sample operating fluidic microchannel was prepared by poly-(dimethylsiloxane) (PDMS)based soft lithography technique,which made it cheap enough for disposable *** PDMS microchannel chip was attached to the temperature controlling substrate for reconfigurable thermal applications.A thin PDMS film was used to seal the microchannel and bridge the functionalized substrate and the sample inside the channel,which facilitated heat transferring and prevented sample contaminating the temperature controlling *** by a one dimensional thermal resistance model,the thin PDMS film was important for the present reconfiguration *** performance of this hybrid microsystem was examined,and the experimental results demonstrated that the chip system could work stably over hours with temperature variation less than *** PDMS microchannel chips were tested on one heating substrate sequentially with a maximum intra-chip temperature difference of *** extracted from serum of a chronic hepatitis B virus(HBV)patient was amplified by this hybrid microsystem and the gel electrophoresis result indicated that the present reconfigurable microfluidic scheme worked successfully.

关键词： reconfigurable microfluidics hybrid microdevice thin PDMS film

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

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Science China(Information Sciences) 2011年第2期54卷 396-406页

作者： CHEN KenLe & ZHANG JinWen National Key Laboratory of Micro/Nano Fabrication Technology, institute of microelectronics, peking university,{3., China 1. National Key Laboratory of Micro/Nano Fabrication Technology Institute of Microelectronics Peking University Beijing 100871 China

Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3. and HFSS simulation, showing that the insertion loss is reduced by around 13. when the bridge width is three times of transmission line width. Further, the inffuence of switch’s structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge’s lower surface can be expected to have broad applications in the future.

关键词： RF MEMS switch insertion loss fringing capacitance dielectric layer

3. building modeling,organization and application in digital city system

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中国科学：技术科学英文版 2010年第S1期53卷 134-142页

作者： YANG Xue 1,WENG JingNong 1,2,XIA YuBin 2,WU Lun 3.& SUI ZhengWei 3.1 College of Software,Beihang university,beijing 100191,China 2 College of Computer,Beihang university,beijing 100191,China 3.institute of Remote Sensing and GIS,peking university,beijing 100871,China Beihang Univ Coll Software Beijing 100191 Peoples R China Beihang Univ Coll Comp Beijing 100191 Peoples R China peking Univ Inst Remote Sensing & GIS Beijing 100871 Peoples R China

The real world is a three-dimensional(3.)space requiring that 3. geospatial information applications be developed in alignment with the observer’s visual and perceptive ***,3. building model data are required in a wide range of areas such as urban planning,environmental protection,real estate management and emergency *** the same time,the development of Web service[LU1]technologies allows the possibility of the widely distributed 3. geospatial data on the web.3. city building model with its related information is an important part in the construction of a digital city system,and has become a staple resource on the web *** view of the hierarchical representation of a 3. building model,an abstract of a 3. building model based on structure details is studied,and a novel representation approach named 3. transparent building hierarchical model is presented in this *** approach fully uses both the existing 3. modeling technologies and CAD constructing mapping *** the spatial relationship description,structural components inside a building can be represented and integrated as hierarchical models in a unified 3. *** addition,based on the characteristics of the 3. building model data,a service-oriented architecture and Web service technologies for 3. city building models are *** aim of the approach is that 3. city building models can be used as a kind of data resource service on the web,and can also exist independently in various different web applications.

关键词： 3. modeling 3. transparent building hierarchical models China Star web services

PDMS prism-glass optical coupling for surface plasmon resonance sensors based on MEMS technology

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Science China(Information Sciences) 2010年第10期53卷 2144-2158页

作者： GENG ZhaoXin 1,2 , LI Qing 3., WANG Wei 1 & LI ZhiHong 1 1 institute of microelectronics, peking university,{3., China 2 School of Information engineering, Minzu university of China, beijing 100081, China 3.School of Sciences, Changchun university of Science and Technology, Changchun 13.000, China 1. institute of microelectronics Peking University Beijing 100871 China2. School of Information engineering Minzu University of China Beijing 100081 China3. School of Sciences Changchun University of Science and Technology Changchun 130000 China

A miniaturized surface plasmon resonance (SPR) chip has been developed for biomedical and chem-ical analysis with low cost and high performance. The techniques of bulk silicon micromachining and polymer replication were used to fabricate the Kretschmann SPR sensor composed of a Polydimethylsiloxane (PDMS) prism, a coupling glass and microchannels. The plasmon properties of thin metal films were investigated theoret-ically based on Fresnel analysis, with optical boundary conditions pertaining to the surface plasmon resonance at the gold/water and gold/air interfaces. The theoretical results show that difference in the refractive index (RI) between the PDMS prism and the coupling glass layer affect the precision of the SPR angle and the SPR curve. Meanwhile, the period of the interference fringe attaching on the SPR curve increases with an increase in wavelength and a decrease in the refractive index of the coupling glass layer. The gold thickness of 50 nm is required while employing a fixed incident wavelength of 650 nm, to achieve optimum SPR excitation conditions and the sensor sensitivity. The characteristics of this SPR sensor were evaluated in the angular interrogation mode of employing the incident wavelength of 650 nm in air and water media, respectively. The obtained SPR angles were approximately consistent with the theoretical ones.

关键词： surface plasmon resolance polymer microfluidic PDMS