Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are *** studied ESD protecting devices are the H-gate NMOS transistors fa...
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Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are *** studied ESD protecting devices are the H-gate NMOS transistors fabricated with a 0.18-μm partially depleted silicon-on-insulator(PDSOI)*** measurements are conducted by using a transmission line pulse(TLP)test *** different temperature-dependent trigger characteristics of groundedgate(GGNMOS)mode and the gate-triggered(GTNMOS)mode are analyzed in *** underlying physical mechanisms related to the effect of temperature on the first breakdown voltage V_(T1)investigated through the assist of technology computer-aided design(TCAD)simulation.
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