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An IO block array in a radiation-hardened SOI SRAM-based FPGA

Journal of Semiconductors 2012年第1期33卷 137-143页

作者： Zhao Yan Wu Lihua Han Xiaowei Li Yan Zhang Qianli Chen Liang Zhang Guoquan Li Jianzhong Yang Bo Gao Jiantou Wang Jian Li Ming Liu Guizhai Zhang Feng Guo Xufeng Zhao Kai Stanley L.Chen Yu Fang Liu zhongli Institute of Semiconductors Chinese Academy of Sciences Beijing 100083China

We present an input/output block （lOB） array used in the radiation-hardened SRAM-based field- programmable gate array （FPGA） VS1000, which is designed and fabricated with a 0.5 μm partially depleted silicon-on-insulator （SOI） logic process at the CETC 58th Institute. Corresponding with the characteristics of the FPGA, each IOB includes a local routing pool and two IO cells composed of a signal path circuit, configurable input/output buffers and an ESD protection network. A boundary-scan path circuit can be used between the pro- grammable buffers and the input/output circuit or as a transparent circuit when the IOB is applied in different modes. Programmable IO buffers can be used at TTL/CMOS standard levels. The local routing pool enhances the flexibility and routability of the connection between the IOB array and the core logic. Radiation-hardened designs, including A-type and H-type body-tied transistors and special D-type registers, improve the anti-radiation performance. The ESD protection network, which provides a high-impulse discharge path on a pad, prevents the breakdown of the core logic caused by the immense current. These design strategies facilitate the design of FPGAs with different ca- pacities or architectures to form a series of FPGAs. The functionality and performance of the IOB array is proved after a functional test. The radiation test indicates that the proposed VS 1000 chip with an IOB array has a total dose tolerance of 100 krad（Si）, a dose survivability rate of 1.5 × 10^11 rad（Si）/s, and a neutron fluence immunity of 1×10^14 n/cm2.

关键词： partially-depleted SOI FPGA IOB radiation-hardened ESD protection

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Investigation of the near-threshold cluster resonance in ^14C

引用

Chinese Physics C 2018年第7期42卷 41-46页

作者： Hong-Liang Zang Yan-Lin Ye Zhi-Huan Li Jian-Song Wang Jian-Ling Lou Qi-Te Li Yu-Cheng Ge Xiao-Fei Yang Jing Li Wei Jiang Jun Feng Qiang Liu Biao Yang Zhi-Qiang Chen Yang Liu Hong-Yi Wu Chen-Yang Niu Chen-Guang Li Chun-Guang Wang Xiang Wang Wei Liu Jian Gao Han-Zhou Yu Jun-Bin Ma Peng Ma Zhen Bai Yan-Yun Yang Shi-Lun Jin Fei Lu School of Physics and State Key Laboratory of Nuclear Physics and Technology Peking UniversityBeijing 100871China Institute of Modern Physics Chinese Academy of ScienceLanzhou 730000China Argonne National Laboratory 9700 S Cass Ave B109LemontIllinois 60439USA Institute of High Energy Physics CASBeijing 100049China RIKEN Nishina Center 2-1 HirosawaWakoSaitama 351-0198Japan Shanghai Institute of Applied Physics Chinese Academy of ScienceShanghai 200000China

An experiment for m p（14C},14C＊→10Be＋α）p inelastic excitation and decay was performed in inverse kinematics at a beam energy of 25.3 MeV/u. A series of 14C excited states, including a new one at 18.3（1） MeV, were observed which decay to various states of the final nucleus of 10Be. A specially designed telescope system, installed around zero degrees, played an essential role in detecting the resonant states near the α-separation threshold. A state at 14.1（1） MeV is clearly identified, being consistent with the predicted band-head of the molecular rotational band characterized by the π-bond linear chain configuration. Further clarification of the properties of this exotic state is suggested by using appropriate reaction tools.

关键词： cluster decay linear-chain-state high detection efficiency inelastic excitation

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