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微晶硅薄膜太阳电池的计算机模拟

微晶硅薄膜太阳电池的计算机模拟

新一代宽禁带4H-SiC功率半导体外延材料的产业化进展

第十届中国太阳能光伏会议

作者：赵明利闫果果杨仕娥郑州大学物理工程学院

本文建立了一个p-i-n结构的微晶硅薄膜电池模型,利用太阳电池电容模拟软件（简称SCAPS）研究了活性层的厚度、缺陷态浓度及窗口层的掺杂浓度等参数对电池的性能的影响,得到的主要结论如下:（1）活性层的厚度和缺陷态浓度对可见和近红外... 详细信息

本文建立了一个p-i-n结构的微晶硅薄膜电池模型,利用太阳电池电容模拟软件（简称SCAPS）研究了活性层的厚度、缺陷态浓度及窗口层的掺杂浓度等参数对电池的性能的影响,得到的主要结论如下:（1）活性层的厚度和缺陷态浓度对可见和近红外波段（即中长波段）的光谱响应和电池的I-V特性有重要影响;（2）窗口层的掺杂浓度主要影响紫外波段（即短波段）的光谱响应和电池的开路电压。

关键词：微晶硅薄膜太阳电池 Ⅰ-Ⅴ特性光谱响应 SCAPS

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军民两用技术与产品 2013年第6期 36-38页

作者：孙国胜董林俞军闫果果李锡光王占国天域半导体科技有限公司中国科学院半导体研究所

使用10×100mm暖壁行星式外延生长系统进行了4H-SiC大面积多片外延生长,获得了具有良好掺杂与厚度均匀性的高质量4H-SiC外延晶片。测试结果显示,所制得外延晶片X射线衍射谱最高峰的半高宽为26.74″,具有良好的结晶质量;片内厚度均匀性... 详细信息

使用10×100mm暖壁行星式外延生长系统进行了4H-SiC大面积多片外延生长,获得了具有良好掺杂与厚度均匀性的高质量4H-SiC外延晶片。测试结果显示,所制得外延晶片X射线衍射谱最高峰的半高宽为26.74″,具有良好的结晶质量;片内厚度均匀性和片间厚度均匀性分别为0.26%和0.5%,片内掺杂均匀性和片间掺杂均匀性分别为2.6%和3.4%;表面粗糙度为0.2nm;表面缺陷密度小于1cm-2。这表明,该10×100mm暖壁行星式外延生长系统可满足4H-SiC外延晶片的产业化需求,将推动SiC功率器件的发展。

关键词： 4H-SiC 外延生长暖壁行星式外延生长系统多片

Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

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Chinese Physics B 2012年第4期21卷 548-554页

作者：董林孙国胜郑柳刘兴昉张峰闫果果赵万顺王雷李锡光王占国 Material Science Center Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Key Laboratory of Semiconductor Material Sciences Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Dongguan Tianyu Semiconductor Inc. Dongguan 523000China

The infrared reflectance spectra of both 4H SiC substrates and epilayers are measured in a wave number range from 400 cm 1 to 4000 cm-1 using a Fourier-transform spectrometer. The thicknesses of the 4H-SiC epilayers and the electrical properties, including the free-carrier concentrations and the mobilities of both the 4H SiC substrates and the epilayers, are characterized through full line-shape fitting analyses. The correlations of the theoretical spectral profiles with the 4H-SiC electrical properties in the 30 cm-1-4000 cm 1 and 400 cm-1-4000 cm-1 spectral regions are established by introducing a parameter defined as error quadratic sum. It is indicated that their correlations become stronger at a higher carrier concentration and in a wider spectral region （30 cm-1-4000 cm-1）. These results suggest that the infrared reflectance technique can be used to accurately determine the thicknesses of the epilayers and the carrier concentrations, and the mobilities of both lightly and heavily doped 4H-SiC wafers.

关键词： 4H SiC infrared reflectance epilayer thickness electrical properties

Influences of annealing on structural and compositional properties of Al_2O_3 thin films grown on 4H–SiC by atomic layer deposition

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Chinese Physics B 2016年第12期25卷 468-473页

作者：田丽欣张峰申占伟闫果果刘兴昉赵万顺王雷孙国胜曾一平 Key Laboratory of Semiconductor Material Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of Sciences

Annealing effects on structural and compositional performances of A1203 thin films on 4H-SiC substrates are studied comprehensively. The Al2O3 films are grown by atomic layer deposition through using trimethylaluminum and H2O as precursors at 300 ℃, and annealed at various temperatures in ambient N2 for 1 min. The Al2O3 film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 ℃ to 768 ℃. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy （XPS）. Although the binding energies of Al 2p and O ls increase together during crystallization, separations between Al 2p and O ls are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar.

关键词： atomic layer deposition annealing transition 4H-SiC

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4H-SiC同质外延层中的扩展缺陷研究

半导体光电 2011年第3期32卷 359-362页

作者：闫果果孙国胜吴海雷王雷赵万顺刘兴昉董林郑柳曾一平中国科学院半导体研究所材料中心北京100083

利用自主研发的热壁低压化学气相沉积(HWLPCVD)系统,在5.08 cm(2英寸)4°偏轴4H-SiC衬底上生长4H-SiC同质外延膜。讨论了4H-SiC同质外延层中的两种扩展缺陷——彗星缺陷和胡萝卜缺陷,研究了这两种缺陷的起源与消除方法。研究发现采用化... 详细信息

利用自主研发的热壁低压化学气相沉积(HWLPCVD)系统,在5.08 cm(2英寸)4°偏轴4H-SiC衬底上生长4H-SiC同质外延膜。讨论了4H-SiC同质外延层中的两种扩展缺陷——彗星缺陷和胡萝卜缺陷,研究了这两种缺陷的起源与消除方法。研究发现采用化学机械抛光(CMP)方法可以有效去除扩展缺陷,提高外延膜的质量。另外,提高衬底质量和优化生长条件也可以消除这两种扩展缺陷。

关键词：碳化硅低压化学气相沉积同质外延扩展缺陷

Multi-wafer 3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor

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Journal of Semiconductors 2011年第6期32卷 17-20页

作者：闫果果孙国胜吴海雷王雷赵万顺刘兴昉曾一平温家良 Institute of Semiconductors Chinese Academy of Sciences China Electric Power Research Institute

We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm *** a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.

关键词： 3C-SiC vertical multi-wafer HWLPCVD heteroepitaxial growth uniformity

High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD

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Journal of Semiconductors 2011年第4期32卷 44-47页

作者：吴海雷孙国胜杨挺闫果果王雷赵万顺刘兴昉曾一平温家良 Novel Semiconductor Material Laboratory Institute of SemiconductorsChinese Academy of Sciences China Electric Power Research Institute

High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source together with ethylene（C;H;） as a carbon precursor *** growth rate of 25-30μm/h has been achieved at lower temperatures between 1500 and 1530℃.The surface roughness and crystalline quality of 50μm thick epitaxial layers（grown for 2 h） did not deteriorate compared with the corresponding results of thinner layers（grown for 30 min）.The background doping concentration was reduced to 2.13×10;cm;.The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.

关键词： 4H-SiC homoepitaxial growth vertical hot wall CVD crystal morphology

Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC

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Journal of Semiconductors 2011年第7期32卷 5-8页

作者：吴海雷孙国胜杨挺闫果果王雷赵万顺刘兴昉曾一平温家良 Novel Semiconductor Material Laboratory Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China China Electric Power Research Institute Beijing 100192 China

A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD *** Al depth profile was almost box shaped with a height of 1×10^（19）cm^（-3） and a depth of 550 *** different annealing processes were developed to protect the wafer *** in RMS roughness have been measured and compared with each *** implanted SiC, annealed with a carbon cap,maintains a high-quality surface with an RMS roughness as low as 3.8 *** and terraces were found in the SiC surface,which annealed by the other two processes（protect in Ar/protect with SiC capped wafer in Ar）.The RMS roughness is 12.2 nm and 6.6 nm,respectively.

关键词： 4H-SiC ion implantation annealing surface morphology

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

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Chinese Physics B 2017年第10期26卷 404-410页

作者：申占伟张峰 Sima Dimitrijev 韩吉胜闫果果温正欣赵万顺王雷刘兴昉孙国胜曾一平 Key Laboratory of Semiconductor Material Sciences Institute of Semiconductors University of Chinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Queensland Micro- and Nano-technology Center Griffith University

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor （MOS） capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250 ℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the （1120） and （1100） faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the （0001） face under the same NO annealing condition. In addition, it is found that Fowler-Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole-Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces.

关键词： 4H-SiC metal-oxide-semiconductor capacitors trench interface states nitric oxide annealing