Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally *** is observed that the reverse leakage current between the gate and sou...
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Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally *** is observed that the reverse leakage current between the gate and source decreases after the off-state stress,whereas the current between the gate and drain *** analyzing those changes of the reverse currents based on the Frenkel–Poole model,we realize that the ionization of fluorine ions occurs during the off-state ***,threshold voltage degradation is also observed after the off-state stress,but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are *** comparing the differences between those devices,we find that the F-ions incorporated in the GaN buffer layer play an important role in averting ***,suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.
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