BiFeO3 is a multiferroic material with physical properties very sensitive to its ***3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and final annealing sche...
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BiFeO3 is a multiferroic material with physical properties very sensitive to its ***3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and final annealing schemes.X-ray diffraction and scanning electron microscopy are employed to probe the phase structures and surface *** Rutherford backscattering spectrometry to quantify the nonstoichiometries of BiFeO3 thin films annealed at 100?C–650?*** results indicate that Bi and Fe cations are close to the stoichiometry of BiFeO3,whereas the deficiency of O anions possibly plays a key role in contributing to the leakage current of 10^-5 A/cm^2 in a wide range of applied voltage rather than the ferroelectric polarizations of BiFeO3 thin films annealed at high temperature.
We fabricated a silver ion emitter based on the solid state electrolyte film of RbAg4 I5 prepared by pulsed laser deposition. The RbAg4 I5 target for PLD process was mechano-chemically synthesized by high-energy ball ...
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We fabricated a silver ion emitter based on the solid state electrolyte film of RbAg4 I5 prepared by pulsed laser deposition. The RbAg4 I5 target for PLD process was mechano-chemically synthesized by high-energy ball milling in Ar atmosphere using β-AgI and RbI as raw materials. The ion-conducting properties of RbAg4 I5 were studied by alternating current(AC) impedance spectroscopy and the ionic conductivity at room temperature was estimated 0.21 S/m. The structure, morphology, and elemental composition of the RbAg4 I5 film were investigated. The Ag+ ion-conducting property of the prepared superioni-conductor film was exploited for ion–beam generation. The temperature and accelerating voltage dependences of the ion current were studied. Few nA current was obtained at the temperature of 196?C and the accelerating voltage of 10 kV.
Copper ion conducting solid electrolyte Rb_(4)Cu_(16)I_(6.5)Cl_(13.5)was prepared by means of mechano-chemical *** structure and morphology of the powder was investigated by x-ray diffraction and scanning electron ***...
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Copper ion conducting solid electrolyte Rb_(4)Cu_(16)I_(6.5)Cl_(13.5)was prepared by means of mechano-chemical *** structure and morphology of the powder was investigated by x-ray diffraction and scanning electron *** grain size was estimated to be 0.2-0.9μm and the ionic conductivity at room temperature was approximately 0.206 S/*** solid electrolyte Rb_(4)Cu_(16)I_(6.5)Cl_(13.5)was exploited for copper ion beam *** copper ion emission current of several nA was successfully obtained at acceleration voltages of 15 kV and temperature of 197℃in vacuum of 2.1×10^(-4)Pa.A good linear correlation between the logarithmic ion current(logI)and the square root of the acceleration voltage(U_(acc))at high voltage range was obtained,suggesting the Schottky emission mechanism in the process of copper ion beam generation.
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