We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at ro...
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We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room *** zinc-blende to orthorhombic phase transition was observed at around 20.0 *** the same pressure range, pressureinduced metallization of GaAs nanowires was confirmed by infrared reflectance *** metallization originates from the zinc-blende to orthorhombic phase *** results demonstrated that the phase transition from zincblende to orthorhombic and the pressure-induced metallization are *** to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.
We operated a p-type point contact high purity germanium(PPCGe)detector(CDEX-1B,1.008 kg)in the China Jinping Underground Laboratory(CJPL)for 500.3 days to search for neutrinoless double beta(0νββ)decay of ^(76)Ge....
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We operated a p-type point contact high purity germanium(PPCGe)detector(CDEX-1B,1.008 kg)in the China Jinping Underground Laboratory(CJPL)for 500.3 days to search for neutrinoless double beta(0νββ)decay of ^(76)Ge.A total of 504.3 kg⋅day effective exposure data was *** anti-coincidence and the multi/single-site event(MSE/SSE)discrimination methods were used to suppress the background in the energy region of interest(ROI,1989–2089 keV for this work)with a factor of 23.A background level of 0.33 counts/(keV⋅kg⋅yr)was *** lower limit on the half life of^(76)Ge 0νββdecay was constrained as T_(1/2)^(0ν)>1.0×10^(23)yr(90%C.L.),corresponding to the upper limits on the effective Majorana neutrino mass:<3.2–7.5 eV.
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