检索结果-南通市图书馆

AlGaN/GaN横向肖特基势垒二极管抗浪涌电流特性与封装方案

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

半导体技术 2022年第5期47卷 354-359,396页

作者：冯威徐尉宗周峰曾昶琨任芳芳陆海南京大学电子科学与工程学院南京210046

基于AlGaN/GaN异质结构的横向肖特基势垒二极管(SBD)在新一代功率电子技术中具有应用潜力。而面对复杂电气环境中的电流过冲及振荡效应,抗浪涌电流能力是器件可靠工作的重要保障。首先通过对混合阳极结构的优化,降低了AlGaN/GaN基SBD的... 详细信息

基于AlGaN/GaN异质结构的横向肖特基势垒二极管(SBD)在新一代功率电子技术中具有应用潜力。而面对复杂电气环境中的电流过冲及振荡效应,抗浪涌电流能力是器件可靠工作的重要保障。首先通过对混合阳极结构的优化,降低了AlGaN/GaN基SBD的开启电压(0.22 V),并提高了器件正向导通能力;在此基础上,通过半正弦脉冲电流产生电路评估了器件的抗浪涌电流能力,发现采用引线键合封装的器件可承受的最大浪涌电流密度约为250 A/cm^(2),这一电流强度主要受限于肖特基电极边缘电流拥挤效应导致的热击穿。为提高近表面器件沟道的散热能力,采用了倒装的封装方式。实验证实倒装封装可以有效抑制热集聚效应,并提高器件的抗浪涌电流能力。

关键词： AlGaN/GaN异质结构肖特基势垒二极管(SBD) 浪涌电流热效应倒装封装

Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2014年第7期23卷 404-408页

作者：王天娇徐尉宗陆海任芳芳陈敦军张荣郑有炓 Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu Province and School of Electronic Science and EngineeringNanjing University

Solar-blind ultraviolet （UV） band-pass filter has significant value in many scientific, commercial, and military appli- cations, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of ＂transparent metal＂. The filter consisting of Al/SiO2 multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.

关键词： solar-blind band-pass filter metal-dielectric multilayer

Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2017年第11期34卷 98-101页

作者：莫晓帆徐尉宗陆海周东任芳芳陈敦军张荣郑有炓 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and EngineeringNanjing UniversityNanjing 210093

Design, fabrication and characterizations of GaN-based blue micro light emitting diode （LED） arrays are reported. The GaN micro-LED array consists of 320×256 pixels with a pitch size of 30μm. Each pixel is 25×25μm^2 in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.

关键词： LED GaN Fabrication and Characterization of a GaN-Based 320

Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode

在线全文

学校读者我要写书评

暂无评论

Chinese Optics Letters 2021年第9期19卷 104-108页

作者： Linlin Su Weizong Xu Dong Zhou Fangfang Ren Dunjun Chen Rong Zhang Youdou Zheng Hai Lu School of Electronic Science and Engineering Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China School of Electronic and Information Engineering Nanjing University of Information Science&Technology Binjiang CollegeWuxi 214105China

Understanding detailed avalanche mechanisms is critical for design optimization of avalanche photodiodes(APDs).In this work,avalanche characteristics and single photon counting performance of 4H-SiC n-i-p and p-i-n APDs are *** studying the evolution of breakdown voltage as a function of incident light wavelength,it is confirmed that at the deep ultraviolet(UV)wavelength region the avalanche events in 4H-SiC n-i-p APDs are mainly induced by hole-initiated ionization,while electron-initiated ionization is the main cause of avalanche breakdown in 4H-SiC p-i-n ***,at the same dark count rate,the single photon counting efficiency of n-i-p APDs is considerably higher than that of p-i-n *** higher performance of n-i-p APDs can be explained by the larger impact ionization coefficient of holes in *** addition,this is the first time,to the best of our knowledge,to report single photon detection performance of vertical 4H-SiC n-i-p-n APDs.

关键词： 4H-SiC avalanche photodiode electron-initiated ionization hole-initiated ionization

Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2023年第2期32卷 449-453页

作者：郭力健徐尉宗位祺刘兴华李天义周东任芳芳陈敦军张荣郑有炓陆海 School of Electronic Science and Engineering Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China

By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work presents a Schottky-pn junction diode(SPND) configuration for the GaN rectifier fabrication. Specific unipolar carrier conduction characteristic is demonstrated by the verification of temperature-dependent current–voltage(I–V) tests and electroluminescence ***, apparently advantageous forward conduction properties as compared to the pn diode fabricated on the same wafer have been achieved, featuring a lower turn-on voltage of 0.82 V. Together with the analysis model established in the GaN SPND for a wide-range designable turn-on voltage, this work provides an alternative method to the GaN rectifier strategies besides the traditional solution.

关键词： GaN Schottky-pn junction diode(SPND) unipolar-carrier-conduction low turn-on voltage

基于4H-SiC APD单光子探测的主动淬灭电路研究

在线全文

学校读者我要写书评

暂无评论

激光技术 2024年第6期48卷 809-815页

作者：陶晓强李天义徐尉宗周东任芳芳陆海南京大学电子科学与工程学院南京210093

为了对比不同类型淬灭电路对4H-SiC雪崩光电二极管(APD)探测性能的影响,采用被动淬灭电路(PQC)和主动淬灭电路(AQC),对两种类型SiC紫外APD进行了单光子探测实验,发现在PQC较长死区时间内,会频发后脉冲现象,导致APD的暗计数率(DCR)较高,... 详细信息

为了对比不同类型淬灭电路对4H-SiC雪崩光电二极管(APD)探测性能的影响,采用被动淬灭电路(PQC)和主动淬灭电路(AQC),对两种类型SiC紫外APD进行了单光子探测实验,发现在PQC较长死区时间内,会频发后脉冲现象,导致APD的暗计数率(DCR)较高,从而降低器件的信噪比;对APD后脉冲概率的时间分布进行了研究,并进一步对AQC在更高器件过偏压下单光子探测中出现的问题进行了分析,提出了电路改进方案。结果表明,通过将AQC死区时间调整至45 ns,在相同单光子探测效率下,可将器件DCR减少至原先水平的1/4;通过有效抑制后脉冲和加快APD恢复速度,AQC可使器件展现出更加优越的探测性能。此研究为SiC APD在单光子探测中的应用提供了一定的参考。

关键词：传感器技术雪崩光电二极管主动淬灭电路 4H-SiC 单光子探测

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2021年第11期30卷 532-537页

作者： Qun-Si Yang Qing Liu Dong Zhou Wei-Zong Xu Yi-Wang Wang Fang-Fang Ren Hai Lu Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Nanjing UniversityNanjing 210093China School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China

Alpha particle radiation detectors with planar double Schottky contacts(DSC)are directly fabricated on 5-μm-thick epitaxial semi-insulating(SI)GaN:Fe film with resistivity higher than 1×10^(8)Ω·*** 10 V bias,the detector exhibits a low dark current of less than 5.0×10^(-11) A at room-temperature,which increases at higher *** behavior in the semi-log reverse current-voltage plot suggests that Poole-Frenkel emission is the dominant carrier leakage mechanism at high *** double-peak characteristics are observed in the energy spectrum of alpha particles regardless of bias *** energy resolution of the SI-GaN based detector is determined to be8.6%at the deposited energy of 1.209 MeV with a charge collection efficiency of81.7%.At a higher temperature of 90℃,the measured full width at half maximum(FWHM)rises to 235 keV with no shift of energy peak position,which proves that the GaN detector has potential to work stably in high temperature *** study provides a possible route to fabricate the low cost GaN-based alpha particle detector with reasonable performance.

关键词： GaN alpha particle detector double Schottky contacts

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2019年第1期28卷 575-579页

作者： Dong Zhang Chenfei Wu Weizong Xu Fangfang Ren Dong Zhou Peng Yu Rong Zhang Youdou Zheng Hai Lu School of Electronic Science and Engineering Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing University State Grid Shandong Electric Power Research Institute

Self-heating effect in amorphous InGaZnO thin-film transistors remains a critical issue that degrades device performance and stability, hindering their wider applications. In this work, pulsed current–voltage analysis has been applied to explore the physics origin of self-heating induced degradation, where Joule heat is shortly accumulated by drain current and dissipated in repeated time cycles as a function of gate bias. Enhanced positive threshold voltage shift is observed at reduced heat dissipation time, higher drain current, and increased gate width. A physical picture of Joule heating assisted charge trapping process has been proposed and then verified with pulsed negative gate bias stressing scheme, which could evidently counteract the self-heating effect through the electric-field assisted detrapping process. As a result, this pulsed gate bias scheme with negative quiescent voltage could be used as a possible way to actively suppress self-heating related device degradation.

关键词： amorphous InGaZnO thin-film transistor self-heating effect threshold voltage shift pulsed negative gate bias

GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2013年第5期30卷 140-143页

作者： XU Wei-Zong FU Li-Hua LU Hai REN Fang-Fang CHEN Dun-Jun ZHANG Rong ZHENG You-Dou Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093

Edge termination is one of the key technologies for fabricating high voltage Schottky barrier diodes(SBDs),which could effectively reduce the peak electric field along the Schottky contact edge and enhance the breakdown *** adopt a high-resistivity ring structure as the edge termination for planar GaN *** edge termination is formed by self-aligned boron implantation on the edge of devices to form a highly damaged *** the implant dose and energy ranges studied experimentally,the GaN SBDs show improved blocking characteristics in terms of reverse leakage current and breakdown voltage at higher implant dose or implant ***,the forward turn-on characteristics of the GaN SBDs exhibit no apparent change.

关键词： Schottky breakdown termination