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Impact of symmetrized and Burt—Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots

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Chinese Physics B 2010年第8期19卷 619-627页

作者：谷永先杨涛季海铭徐鹏飞王占国 Key Laboratory of Semiconductor Materials Institute of SemiconductorsChinese Academy of Sciences

We present a systematic investigation of calculating quantum dots （QDs） energy levels using finite element method in the frame of eight-band k · p method. Numerical results including piezoelectricity, electron and hole levels, as well as wave functions are achieved. In the calculation of energy levels, we do observe spurious solutions （SSs） no matter Burt Foreman or symmetrized Hamiltonians are used. Different theories are used to analyse the SSs, we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs. The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs, different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.

关键词： quantum dot symmetrized Hamiltonian Burt Foreman Hamiltonian finite element method spurious solutions

Ⅴ/Ⅲ比对MOCVD生长InAs/GaAs量子点的影响

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Ⅴ/Ⅲ比对MOCVD生长InAs/GaAs量子点的影响

MOCVD生长高质量InAs/InGaAsP/InP叠层结构量子点

第十二届全国MOCVD学术会议

作者：季海铭罗帅杨涛中国科学院半导体研究所/中国科学院半导体材料科学重点实验室

本文研究了Ⅴ/Ⅲ比对MOCVD生长InAs/GaAs量子点的影响。光致发光谱结果表明,随着Ⅴ/Ⅲ比的降低,InAs/GaAs量子点发光谱的双模形态更加明显,发光强度逐渐增强。这是由于AsH流量的减小抑制了In的迁移,一方面降低了量子点的熟化程度,另一... 详细信息

本文研究了Ⅴ/Ⅲ比对MOCVD生长InAs/GaAs量子点的影响。光致发光谱结果表明,随着Ⅴ/Ⅲ比的降低,InAs/GaAs量子点发光谱的双模形态更加明显,发光强度逐渐增强。这是由于AsH流量的减小抑制了In的迁移,一方面降低了量子点的熟化程度,另一方面也限制了含缺陷大量子点的形成。

关键词： MOCVD Ⅴ/Ⅲ比 InAs/GaAs 量子点

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MOCVD生长高质量InAs/InGaAsP/InP叠层结构量子点

Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers

第十二届全国MOCVD学术会议

作者：罗帅季海铭杨涛中国科学院半导体研究所半导体材料科学重点实验室

高质量的叠层结构量子点有源区材料是制作高性能量子点激光器的关键。本文报告采用金属有机化学气相沉积(MOCVD)制备高质量InAs/InGaAsP/InP叠层结构量子点。通过采用两步盖层生长InGaAsP隔离层,以及对InGaAsP波导层界面的优化,我们获... 详细信息

高质量的叠层结构量子点有源区材料是制作高性能量子点激光器的关键。本文报告采用金属有机化学气相沉积(MOCVD)制备高质量InAs/InGaAsP/InP叠层结构量子点。通过采用两步盖层生长InGaAsP隔离层,以及对InGaAsP波导层界面的优化,我们获得了高性能的叠层结构量子点有源区。从单层到七层,量子点的光致荧光强度随层数增加而增强,并且峰值半宽略有减小。

关键词： InAs InP 量子点 MOCVD

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Chinese Physics Letters 2016年第12期33卷 63-67页

作者：吕尊仁季海铭杨晓光罗帅高凤许锋杨涛 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences

Large-signal modulation capability, as an important performance indicator, is directly related to the high-speed optical communication technology involved. We experimentally and theoretically investigate the large-signal modulation characteristics of the simultaneous ground-state （GS） and the excited-state （ES） lasing in InAs/OaAs quantum dot laser diodes. The large-signal modulation capability of total light intensity in the transition regime from OS lasing to two-state lasing is unchanged as the bias-current increases. However, GS and ES large-signal eye diagrams show obvious variations during the transition. Relaxation oscillations and large-signal eye diagrams for OS, ES, and total light intensities are numerically simulated and analyzed in detail by using a rate-equation model. The -ndings show that a complementary relationship between the light intensities for OS and ES lasing exists in both the transition regime and the two-state lasing regime, leading to a much smaller overshooting power and a shorter settling time for the total light intensity. Therefore, the eye diagrams of GS or ES lasing are diffuse whereas those of total light intensity are constant as the bias-current increases in the transition regime.

关键词： GS for Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers ES of in

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

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Chinese Physics Letters 2010年第2期27卷 285-287页

作者：季海铭杨涛曹玉莲徐鹏飞谷永先马文全王占国 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Nano-Optoelectronics Laboratory Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

我们报导 1.3 m InAs/GaAs 量点(QD ) 的分子的横梁取向附生生长有高典型的温度 T0 的激光。激光的活跃区域由五层的 InAs QD 组成， p 类型调整做。有 4 m 和 1200 m 的洞长度的条纹宽度的设备在不同温度下面在搏动的政体被制作并且测... 详细信息

我们报导 1.3 m InAs/GaAs 量点(QD ) 的分子的横梁取向附生生长有高典型的温度 T0 的激光。激光的活跃区域由五层的 InAs QD 组成， p 类型调整做。有 4 m 和 1200 m 的洞长度的条纹宽度的设备在不同温度下面在搏动的政体被制作并且测试。它被发现那到象在从 10 的温度范围的 532K 一样 QD

关键词：量子点激光器分子束外延生长特征温度 GaAs 连续波激光器调制掺杂结晶质量砷化铟

Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition

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Chinese Physics B 2021年第1期30卷 568-571页

作者：王岩罗帅季海铭曲迪黄翊东 Innovation Center of Advanced Optoelectronic Chip Institute for Electronics and Information Technology in TianjinTsinghua UniversityTianjin 300467China Tianjin H-Chip Technology Group Corporation Tianjin 300467China Department of Electronic Engineering Tsinghua UniversityBeijing 100084China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the 3-d B spectral bandwidth of the Fabry–Perot(FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm.Combined with the anti-reflection(AR)/high-reflection(HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 k A/cm2. The maximum output power of 6.5 m W was achieved under a 500 m A injection current.All achievements mentioned above were obtained under continuous-wave(CW) mode at room temperature(RT).

关键词： InAs/InP quantum dot external-cavity laser continuous-wave operation metal-organic chemical vapor deposition

A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser

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Chinese Physics Letters 2010年第3期27卷 181-183页

作者：季海铭杨涛曹玉莲徐鹏飞谷永先刘宇谢亮王占国 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Nano-Optoelectronics Laboratory Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 State Key Laboratory on Integrated Optoeleetronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

我们表明 10 Gb/s 直接调制分子的横梁取向附生在 GaAs 底层上种的 1.3 m InAs 量点(QD ) 激光。QD 激光的活跃区域由五栈的 InAs QD 层组成。有 4 m 和 600 m 的洞长度的山脉宽度的山脉波导激光与标准平版印刷术和湿蚀刻技术被制作。... 详细信息

我们表明 10 Gb/s 直接调制分子的横梁取向附生在 GaAs 底层上种的 1.3 m InAs 量点(QD ) 激光。QD 激光的活跃区域由五栈的 InAs QD 层组成。有 4 m 和 600 m 的洞长度的山脉宽度的山脉波导激光与标准平版印刷术和湿蚀刻技术被制作。激光在房间温度与 5 妈的很低的阀值水流在 1293 点射出 nm，这被发现。而且，在 10 Gb/s 调整下面的清楚的启迪的模式在多达 50

关键词：量子点激光器直接调制砷化铟 GaAs 分子束外延生长砷化镓衬底波导激光器蚀刻技术

P型掺杂1．3μm量子点激光器的制作及特性研究

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P型掺杂1．3μm量子点激光器的制作及特性研究

InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

第十六届全国半导体物理学术会议

作者：曹玉莲杨涛季海铭马文全陈良惠中国科学院半导体研究所纳米光电子实验室

近年来,研究人员对 GaAs 基1.3 μm InAs 自组装量子点激光器表现出了极大的兴趣。其中一个最主要原因是该激光器很有可能成为未来高速光通信系统所需的低成本和高性能光源。可是,与理论预计的相反,实际制作的量子点激光器,由于空穴子...

近年来,研究人员对 GaAs 基1.3 μm InAs 自组装量子点激光器表现出了极大的兴趣。其中一个最主要原因是该激光器很有可能成为未来高速光通信系统所需的低成本和高性能光源。可是,与理论预计的相反,实际制作的量子点激光器,由于空穴子能级间隔过小,其性能与温度仍有很大的关系。最近,在有源区引进 P 型调制掺杂已被证明是改进该量子点激光器温度特性的有效技术。

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Chinese Physics Letters 2013年第6期30卷 209-211页

作者：罗帅季海铭高凤杨晓光梁平赵玲娟杨涛 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083

We demonstrate InAs/InGaAsP/InP quantum dot(QD)lasers grown by metalorganic chemical vapor deposition.The active region of the lasers consists of five layers of InAs QDs.Ridge waveguide lasers with 6μm width have been fabricated by standard optical lithography and wet etching.Under continuous wave operation at room temperature,a low threshold current density of 447 A/cm^(2)per QD layer is achieved for a QD laser with a cavity length of 2 mm.Moreover,the lasing redshifts from 1.61μm to 1.645μm as the cavity length increases from 1.5 mm to 4 mm.A high characteristic temperature of up to 88 K is obtained in the temperature range between 10°C and 40°C.

关键词： InGaAsP/InP waveguide lithography