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基底温度对直流磁控溅射ITO透明导电薄膜性能的影响

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中国激光 2008年第12期35卷 2031-2035页

作者：曾维强姚建可贺洪波邵建达中国科学院上海光学精密机械研究所上海201800

用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9∶1。运用分光光度计、四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析。计算了晶面间... 详细信息

用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9∶1。运用分光光度计、四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析。计算了晶面间距和晶粒尺寸,分析了薄膜的力学性质。实验结果表明,在实验设备条件下,直流磁控溅射ITO陶瓷靶制备ITO薄膜时,适当的基底温度(200℃)能在保证薄膜85%以上高可见光透过率下,获得最低的电阻率,即基底温度有个最佳值。薄膜的结晶度随着基底温度的提高而提高。

关键词：薄膜 ITO透明导电膜基底温度直流磁控溅射

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

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Chinese Physics B 2023年第1期32卷 559-562页

作者：姚建可钟文森 College of Materials&New Energy South China Normal UniversityShanwei 516625China Blue Lake Optic-electronic Company Huizhou 516001China

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device *** the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly *** BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous *** transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm *** basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all *** film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room *** results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

关键词： BaSnO_(3)and In_2O_(3)mixed film filtered cathodic vacuum arc deposition transparent conductive films microstructure optical properties electrical properties

在Ca(OH)_2碱性条件下亚硫酸钙对矿渣的激发作用研究

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材料科学与工程 2002年第1期20卷 38-40页

作者：姚建可杨利群蒋年平徐先宇浙江大学材料系浙江杭州310027

采用DTA、XRD、SEM等测试方法 ,研究了在Ca(OH) 2 碱性条件下CaSO3·1 2H2 O对矿渣的激发作用 ,并与CaSO4·2H2 O对矿渣的激发作用进行了对比。结果表明 :CaSO3·1 2H2 O对矿渣的激发作用远不如CaSO4·2H2 O ,CaSO3·1 2H2 O和铝酸盐反... 详细信息

采用DTA、XRD、SEM等测试方法 ,研究了在Ca(OH) 2 碱性条件下CaSO3·1 2H2 O对矿渣的激发作用 ,并与CaSO4·2H2 O对矿渣的激发作用进行了对比。结果表明 :CaSO3·1 2H2 O对矿渣的激发作用远不如CaSO4·2H2 O ,CaSO3·1 2H2 O和铝酸盐反应主要生成片状的C3A·CaSO3·11H2

关键词：亚硫酸钙激发矿渣 Ca(OH)2 氢氧化钙水化石膏矿渣水泥烟气脱硫脱硫渣

4H-SiC基底Al2O3／SiO2双层减反射膜的设计和制备

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光学学报 2008年第12期28卷 2431-2435页

作者：黄火林张峰吴正云齐红基姚建可范正修邵建达厦门大学物理系福建厦门361005 中国科学院上海光学精密机械研究所上海201800

在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。利用编程计算得到Al2O3和SiO2的最优物理膜厚分别为42.0nm和96.1nm以及参考波长λ=280nm处最小反射率为0.09%。由误差... 详细信息

在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。利用编程计算得到Al2O3和SiO2的最优物理膜厚分别为42.0nm和96.1nm以及参考波长λ=280nm处最小反射率为0.09%。由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率。实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715。用电子束蒸发法在4H-SiC基底上淀积Al2O3/SiO2双层膜,厚度分别为42nm和96nm。SEM截面图表明淀积的薄膜和基底间具有较强的附着力。实测反射率极小值为0.33%,对应λ=276nm,与理论结果吻合较好。与传统SiO2单层膜相比,Al2O3/SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景。

关键词：薄膜光学 Al2O3/SiO3双层减反射膜电子束蒸发 4H—SiC基底折射率

Influence of coating material on laser damage threshold of TiO_2 films

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Chinese Optics Letters 2007年第9期5卷 556-558页

作者：姚建可范正修贺洪波邵建达 R&D Center for Optical Thin Film Coatings Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences

The optical property, structure, surface properties （roughness and defect density） and laser-induced damage threshold （LIDT） of TiO2 films deposited by electronic beam （EB） evaporation of TiO2 （rutile）, TiO2 （anatase） and TiO2 ＋ Ta205 composite materials are comparatively studied. All films show the polycrystalline anatase TiO2 structure. The loose sintering state and phase transformation during evaporating TiO2 anatase slice lead to the high surface defect density, roughness and extinction coefficient, and low LIDT of films. The TiO2 ＋ Ta205 composite films have the lowest extinction coefficient and the highest LIDT among all samples investigated. Guidance of selecting materials for high LIDT laser mirrors is given.

关键词： Composite films Composite materials Electron beams Evaporation Laser damage Optical films Optical properties Phase transitions Polycrystalline materials Sintering Structural properties Surface defects Surface properties Surface roughness Thin films

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SiO2薄膜折射率的准确拟合分析

中国激光 2008年第5期35卷 760-763页

作者：王胭脂张伟丽范正修黄建兵晋云霞姚建可邵建达中国科学院上海光学精密机械研究所

精确的光学常数对于设计和制备高品质的光学薄膜非常重要,尤其是那些光学性能对折射率变化敏感的薄膜。SiO_2是一种常用的低折射率材料,因与常用基底折射率相近使其准确拟合有一定难度。实验通过离子束溅射制备了SiO_2单层膜。考虑测量... 详细信息

精确的光学常数对于设计和制备高品质的光学薄膜非常重要,尤其是那些光学性能对折射率变化敏感的薄膜。SiO_2是一种常用的低折射率材料,因与常用基底折射率相近使其准确拟合有一定难度。实验通过离子束溅射制备了SiO_2单层膜。考虑测量时的误差和基底折射率的影响,采用透射率包络和反射率包络得到了SiO_2的折射率,并用所得折射率进行反演来对这两种途径在实际测量拟合过程中的准确性进行比对。分析表明,剩余反射率在实际的测量过程中误差更小,直接用测量镀膜前后基片的剩余反射率值可以更简便更准确地得到SiO_2的折射率,能达到10^(-2)的精度。

关键词：薄膜 SiO2折射率包络法准确拟合

Laser-induced damage threshold in n-on-1 regime of Ta_2O_5 films at 532,800,and 1064 nm

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Chinese Optics Letters 2007年第12期5卷 727-729页

作者：许程姚建可麻健勇晋云霞邵建达 R&D Center for Optical Thin Film Coatings Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800 Graduate School of the Chinese Academy of SciencesBeijing 100039 R&D Center for Optical Thin Film Coatings Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800

Ta205 films were prepared with conventional electron beam evaporation and annealed in 02 at 673 K for 12 h. Laser-induced damage thresholds （LIDTs） of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta205 films were influenced by annealing in 02.

关键词： Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532,800,and 1064 nm Ta

Laser-induced damage of high reflectors for Ti:sapphire laser system

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Chinese Optics Letters 2007年第12期5卷 724-726页

作者：姚建可曾维强范正修贺洪波邵建达 R&D Center for Optical Thin Film Coatings Shanghai Institute of Optics and Fine MechanicsShanghai 201800

A broadband （- 176 nm, R 〉 98%, λo = 800 nm） and high laser-induced damage threshold （LIDT = 2.4 J/cm^2） TiO2/HfO2/SiO2 high reflector （HR） for Ti：sapphire chirped-pulse amplification （CPA） laser system is fabricated by the electron beam evaporation. The refractive index and extinction coefficient of TiO2 and HfO2 films are calculated from single-layer films＇ transmittance spectra. The properties of HR are mainly determined by the high refractive index material. The high refractive index leads to wide bandwidth. A low extinction coefficient indicates low absorption and high LIDT. The possible damage mechanism of HR is discussed.

关键词： Bandwidth Electron beams Evaporation Refractive index Solid state lasers

Effect of Process Parameters on Laser Damage Threshold of TiO2 Coatings

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Chinese Physics Letters 2007年第9期24卷 2606-2608页

作者：姚建可晋云霞赵元安贺洪波邵建达范正修 P&D Centre for Optical Thin Film Coatings Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 Graduate School Chinese Academy of Sciences Beijing 100080

We investigate the laser damage behaviour of an electron-beam-deposited TiO2 monolayer at different process parameters. The optical properties, chemical composition, surface defects, absorption and laser-induced damage threshold （LIDT） of films are measured. It is found that TiO2 films with the minimum absorption and the highest LIDT can be fabricated using a TiO2 starting material after annealing. LIDT is mainly related to absorption and is influenced by the non-stoichiometric defects for TiO2 films. Surface defects show no evident effects on LIDT in this experiment.

关键词： coated conductor buffer layer self-epitaxy CeO2