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Fabrication of Thin Graphene Layers on a Stacked 6H-SiC Surface in a Graphite Enclosure

Chinese Physics Letters 2013年第1期30卷 208-211页

作者： DENG Peng-Fei LEI Tian-Min LU Jin-Jun LIU Fu-Yan ZHANG Yu-Ming GUO Hui ZHANG Yi-Men WANG Yue-Hu TANG Xiao-Yan School of Technical Physics Xidian UniversityXi'an 710071 School of Microelectronics Xidian UniversityXi'an 710071 State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical PhysicsChinese Academy of SciencesLanzhou 730000

Thin and homogeneous epitaxial graphene(EG)layers on a 6H-SiC(0001)substrate are fabricated and they cover the whole substrate(10×10 mm^(2)).The sample surface is capped by another 6H-SiC(0001)wafer in a graphite enclosure to form a relatively high Si partial pressure between them,which significantly reduces the extremely high growth rate of *** structure and morphology of the EG layers are investigated by Raman spectroscopy,atomic force microscopy and field-emission scanning electronic *** results are compared with an uncapped sample surface,and reveal the obvious existence of ridges on the surface of the EG,and show that capping is indeed beneficial to obtain homogeneous graphene.

关键词： closure surface Surface

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