Photoluminescence(PL)characteristics of the structure consisting of green InGaN/GaN multiple quantum wells(MQWs)and low indium content InGaN/GaN pre-wells are *** PL peaks from pre-wells and green InGaN/GaN MQWs are *...
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Photoluminescence(PL)characteristics of the structure consisting of green InGaN/GaN multiple quantum wells(MQWs)and low indium content InGaN/GaN pre-wells are *** PL peaks from pre-wells and green InGaN/GaN MQWs are *** peak energy values for both pre-wells and green InGaN/GaN MQWs display an S-shaped variation with *** addition,the differences in the carrier localization effect,defect density,and phonon-exciton interaction between the pre-wells and green InGaN/GaN MQWs,and the internal quantum efficiency of the sample are *** obtained results elucidate the mechanism of the luminescence characteristics of the sample and demonstrate the significant stress blocking effect of pre-wells.
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