FexGe1−x/Ge amorphous heterojunction diodes with p-FexGe1−x ferromagnetic semiconductor layers are grown on single-crystal Ge substrates of p-type,n-type and intrinsic semiconductors,*** I–V curves of p−Fe_(0.4)Ge_(0...
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FexGe1−x/Ge amorphous heterojunction diodes with p-FexGe1−x ferromagnetic semiconductor layers are grown on single-crystal Ge substrates of p-type,n-type and intrinsic semiconductors,*** I–V curves of p−Fe_(0.4)Ge_(0.6)/p−Ge diodes only show slight changes with temperature or with magnetic *** the p-Fe_(0.4)Ge_(0.6)/n−Ge diode,good rectification is maintained at room *** interestingly,the I–V curve of the p−Fe0.4Ge0.6/i-Ge diode can be tuned by the magnetic field,indicating a large positive *** resistances of the junctions decrease with the increasing temperature,suggesting a typical semiconductor transport *** origin of the positive magnetoresistance is discussed based on the effect of the electric and magnetic field on the energy band structures of the interface.
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