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电光调制的频谱特性—I.外腔调制

中国激光 1989年第3期16卷 167-169页

作者：代伐冯志超成都电讯工程学院应用所

从外腔电光耦合调制输出光场振幅和光场强度的频谱展开出发,研究了外腔电光调制的调制方式.引入相对谐波畸变,得出了电光调制在不同直流偏压下,可近似为振幅调制和强度调制的条件,实验结果与理论分析相一致.

关键词：电光调制外腔调制频谱特性

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人间乐土

音乐创作 2016年第11期 62-63页

作者：代伐钟张少飞浙江传媒学院音乐学院

A transformer-loaded receiver front end for 2.4 GHz WLAN in 0.13μm CMOS technology

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Journal of Semiconductors 2011年第12期32卷 101-106页

作者：彭苗林敏石寅代伐 Institute of Semiconductors Suzhou-CAS Semiconductors Integrated Technology Research Center Department of Electrical & Computer Engineering Auburn University

A 2.4 GHz radio frequency receiver front end with an on-chip transformer compliant with IEEE 802.11b/g standards is presented. Based on zero-IF receiver architecture, the front end comprises a variable gain common-source low noise amplifier with an on-chip transformer as its load and a high linear quadrature folded Gilbert mixer. As the load of the LNA, the on-chip transformer is optimized for lowest resistive loss and highest power gain. The whole front end draws 21 mA from 1.2 V supply, and the measured results show a double side band noise figure of 3.75 dB, -31 dBm IIP3 with 44 dB conversion gain at maximum gain setting. Implemented in 0.13 μm CMOS technology, it occupies a 0.612 mm^2 die size.

关键词： zero-IF direct-down-conversion WLAN CMOS RF on-chip transformer

A dual-band frequency synthesizer for CMMB application with low phase noise

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Journal of Semiconductors 2010年第9期31卷 68-73页

作者：于鹏颜峻石寅代伐 Institute of Semiconductors Chinese Academy of Sciences Department of Electrical & Computer Engineering Auburn University

A wide-band frequency synthesizer with low phase noise is *** frequency tuning range is from 474 to 858 MHz which is compatible with U-band CMMB application while the S-band frequency is also included. Three VCOs with selectable sub-band are integrated on chip to cover the target frequency *** PLL is fabricated with 0.35μm SiGe BiCMOS *** measured result shows that the RMS phase error is less than 1°and the reference spur is less than -60 *** proposed PLL consumes 20 mA current from a 2.8 V *** silicon area occupied without PADs is 1.17 mm;.

关键词： CMMB PLL frequency synthesizer phase noise sigma-delta modulator

Design and optimization of a 2.4 GHz RF front-end with an on-chip balun

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Journal of Semiconductors 2011年第9期32卷 93-98页

作者：徐化王磊石寅代伐 Institute of Semiconductors Chinese Academy of Sciences Suzhou-CAS Semiconductor Integrated Technology Co. Department of Electrical and Computer Engineering Auburn University

A 2.4 GHz low-power,low-noise and highly linear receiver front-end with a low noise amplifier（LNA） and balun optimization is *** conversion architecture is employed for this *** on-chip balun is designed for single-to-differential conversion between the LNA and the down-conversion mixer,and is optimized for the best noise performance of the *** circuit is implemented with 0.35μm SiGe BiCMOS *** front-end has three gain steps for maximization of the input dynamic *** overall maximum gain is about 36 *** double-sideband noise figure is 3.8 dB in high gain mode and the input referred third-order intercept point is 12.5 dBm in low gain *** down-conversion mixer has a tunable parallel R-C load at the output and an emitter follower is used as the output stage for testing *** total front-end dissipation is 33 mW under a 2.85 V supply and occupies a 0.66 mm^2 die size.

关键词： front-end LNA balun mixer direct-conversion

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电光调制的频谱特介—Ⅱ.内腔调制

中国激光 1989年第3期16卷 170-173页

作者：代伐冯志超蒲文嘉成都电讯工程学院应用所建材总局成都建材设计研究院

从内腔电光耦合调制输出光场振幅和光场强度的傅里叶展开出发,研究了内腔电光调制的频谱特性.数值计算得出了内腔电光调制输出功率谱和振幅谱的各谐波幅度,以及不同直流偏压下的调制深度.采用CdTe晶体,进行了CO_2激光的内腔电光调制试验... 详细信息

从内腔电光耦合调制输出光场振幅和光场强度的傅里叶展开出发,研究了内腔电光调制的频谱特性.数值计算得出了内腔电光调制输出功率谱和振幅谱的各谐波幅度,以及不同直流偏压下的调制深度.采用CdTe晶体,进行了CO_2激光的内腔电光调制试验,得到了与理论分析一致物结果.

关键词：电光调制频谱特性内腔调制

A Wide-Band High-Linearity Down-Conversion Mixer for Cable Receptions

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Journal of Semiconductors 2006年第7期27卷 1159-1163页

作者：顾明石寅代伐中国科学院半导体研究所北京100083 奥本大学电子工程与计算机科学系

We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches ＋ 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.

关键词： BiCMOS wide band linearity down conversion mixer SiGe

A Wide-Band Low Noise Amplifier for Terrestrial and Cable Receptions

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Journal of Semiconductors 2006年第6期27卷 970-975页

作者：马德胜石寅代伐中国科学院半导体研究所人工神经网络与高速电路实验室北京100083 奥本大学电子工程与计算机科学系

We present the design of a wide-band low-noise amplifier （LNA） implemented in 0.35μm SiGe BiCMOS technology for cable and terrestrial tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1 ～ 1GHz wide bandwidth and 18. 8dB gain with less than 1.4dB of gain variation. The noise figure of the wideband LNA is 5dB, and its 1dB compression point is - 2dBm and IIP3 is 8dBm. The LNA dissipates 120mW of power with a 5V supply.

关键词： BiCMOS wide band noise figure linearity low-noise amplifier SiGe

A wideband RF amplifier for satellite tuners

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Journal of Semiconductors 2011年第11期32卷 77-81页

作者：胡雪青龚正石寅代伐 Institute of Semiconductors Chinese Academy of Sciences Department of Electrical and Computer Engineering Auburn University

This paper presents the design and measured performance ofa wideband amplifier for a direct conversion satellite tuner. It is composed of a wideband low noise amplifier （LNA） and a two-stage RF variable gain amplifier （VGA） with linear gain in dB and temperature compensation schemes. To meet the system linearity requirement, an improved distortion compensation technique and a bypass mode are applied on the LNA to deal with the large input signal. Wideband matching is achieved by resistive feedback and an off-chip LC-ladder matching network. A large gain control range （over 80 dB） is achieved by the VGA with process voltage and temperature compensation and dB linearization. In total, the amplifier consumes up to 26 mA current from a 3.3 V power supply. It is fabricated in a 0.35μm SiGe BiCMOS technology and occupies a silicon area of 0.25 mm^2.

关键词： SiGe BiCMOS, linearization wideband matching process voltage and temperature compensation