Raman scattering study on anisotropic property in wurtzite 4H-Si C
作者单位：Laboratory of optoelectronic materials ＆ detection technology Guangxi Key Laboratory for the Relativistic Astrophysics College of Physics Science ＆ Technology Guangxi University
会议名称：《第十九届全国光散射学术会议》
会议日期：2017年
学科分类：081702[工学-化学工艺] 081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070302[理学-分析化学] 0703[理学-化学]
关 键 词：关键词 4H-SiC Raman anisotropic property wurtzite
摘 要：正Silicon carbide（Si C）is a wide bandgap semiconductor having high critical electric field strength,making it especially attractive for high-power and high-temperature *** development of Si C devices relies