The optoelectronic characteristic of Al doping on GZO thin film
作者单位：Department of Resources EngineeringCheng Kung University Department of Mechanical EngineeringKaohsiung University of Applied Sciences Department of Materials Science and EngineeringCheng Kung University
会议名称：《第十二届海峡两岸薄膜科学与技术研讨会》
会议日期：2016年
学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学]
关 键 词：Aluminum Gallium doped ZnO RF sputtering optical and electronic property
摘 要：It investigates the optical and electronic properties of Al doped on GZO thin films on glass substrates by using radio frequency magnetron sputtering（RF-sputtering）.The electric,optical and structural characteristics of AGZO thin films with various annealing temperatures are investigated.All films illustrate strong（002） for AGZO preferential orientation by using XRD analysis.The results show that the average transmittance of AGZO thin films is increased with annealing temperature.Furthermore,the resistivity also decreased with annealing temperature.