Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation
作者单位：School of physics and Materials Science Radiation Detection Materials & Devices Lab Anhui University School of Sciences Anhui University of Science and Technology
会议名称：《安徽省第四届（2016年）“卓凌杯”真空科技青年创新大赛暨学术研讨会》
会议日期：2016年
学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学]
基 金：the support from National Key Project of Fundamental Research(2013CB632705,2012CB932303) National Natural Science Foundation of China(51572002,11104269,51102072) Technology Foundation for Selected Overseas Chinese Scholar,Ministry of Personnel of China(J05015131) Outstanding Young Scientific Foundation and Youth Science Research Foundation of Anhui University(KJJQ1103) “211 project” of Anhui University
关 键 词：High-k gate dielectric Atomic-layer-deposition Electrical properties Carrier transportation mechanism Incorporation
摘 要：Effect of AlO incorporation on the electrical properties and carrier transportation of atomic-layer-deposited(ALD) Hf Al O high-k gate dielectrics on Si substrates have been investigated. Electrical analyses indicate that interfacial properties of Hf Al O/Si gate stack has been is improved and leakage current is reduced after AlO incorporation into HfO. Additionally,the Hf Al O/n-Si sample with precursor ratio of 4:2 exhibits the lowest interface charge density( D)of 3.6×10cme V, the lowest border trapped oxide charge density( N) of 2.4×10cm, the lower density of oxide charge( Q) of 0.9×10cm, and the lowest frequency dispersion of 0.15%. In addition, the carrier transportation mechanism for both HfO and HfAlO has been investigated systematically. Based on the analysis, it can be concluded that that Poole-Frenkle(P-F) emission is main conduction mechanism at the low electric field, and direct tunneling(D-T)dominates the conduction mechanism at the high field, respectively.