Application of Pulse Modulated Radio Frequency Plasmas in Atomic Layer Deposition
会议名称：《第三届微电子及等离子体技术国际会议》
会议日期：2011年
学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学]
关 键 词：Atomic layer deposition Pulse modulated plasmas Temperature
摘 要：Atomic layer deposition（ALD） has recently been widely studied for the precisely controlling of thickness and uniformity,especially for the high-k ***,the normally applied thermal ALD system is restricted in industry applications for its low deposition rate of thin ***,the pulsed modulated radio frequency plasmas are developed to improve the deposition rate in *** can also achieve low temperature（below 100 ℃） deposition,which expands the application scope of ALD to thermal sensitive *** experiments,trimethyl aluminium（TMA） and H2O are employed as the two precursors and the pulsed modulated radio frequency power,which is triggered by ALD pulse signals,is introduced into the chamber for plasma *** substrates of silicon and polyethylene terephthalate（PET） are *** the assistance of the plasmas,it is demonstrated that the deposition rate on Si substrate can be improve intensively,especially at the low substrate temperature of 50 ℃,and the uniform thin film of Al2O3 was successfully deposited on the PET substrate with substrate temperature below vitrification temperature of PET film,which can’t be achieved with normal thermal ***,the time scale of plasma ignition and maintenance during ALD procedure was studied to demonstrate the efficiency of plasma on ALD deposition,which is important for the keep the substrate temperature and also the power consumption.