The Quantum Dots Characteristics of Hydrogenated Nanocrystalline Silicon Films

作     者：M.Liu H.F.Dou Y.L. He X.L.Jiang(The Amorphous Physics Research Lab.,Beijing University of Aeronautics and Astronauts,Beijing 100083,China) 

会议名称：《1996年中国青年学者物理学讨论会》

会议日期：1997年

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

摘      要：The hydrogenated nanocrystalline silicon films(nc-Si:H)are fabricated by PECVD and the room temperature conductivity of ne-Si:H is in the range of 10-10(Ω·cm).The crystalline grains(3- 5nm in size)in nc-Si:H films have been demonstrated structurally and electrically to be served as quantum dots(QD).The resonant tunneling diode is fabricated with thin nc-Si:H film and the staircases appears clearly on its Ⅰ-Ⅴ curves under 77K.