Nitride-based LEDs with improved ESD reliability

作     者：Y. K. Su, S. C. Wei and S. J. Chang Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, Tainan 

会议名称：《The Eighth Chinese Optoelectronics Symposium》

会议日期：2006年

学科分类：08[工学] 0803[工学-光学工程] 

关 键 词：GaN LED growth temperature ESD V-defect 

摘      要：GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900℃-grown p-cap layer could only endure negative 1100 V electrostatic discharge (BSD) pulses while the LED with 1040℃-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040℃-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.