Raman Scattering Studies on CVD Grown Cubic SiC Thin Films on Si
作者单位：College of Physics Science & Technology Guangxi Key Laboratory for the Relativistic Astrophysics Laboratory of optoelectronic materials & detection technology Guangxi University Institute of Optoelectronic Material and Technology South China Normal University State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering Sun Yat-Sen University Department of Mechanical Engineering University of Malaya Department of Physics Auburn University
会议名称：《第十八届全国光散射学术会议》
会议日期：2015年
学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 070302[理学-分析化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学]
基 金：The Open-Project Program of the State Key Laboratory of Optoelectronic Materials and Technologies(Sun Yatsen Unversity) the National Natural Science Foundation of China under Grant Nos.11474365,61377055,and61176085 The Guangxi Natural Science Foundation Innovation Team Project of Guangxi Key Laboratory for the Relativistic Astrophysics the National Natural Science Foundation of China under Grant Nos.AE0520088
摘 要：正Cubic（3C）-SiC films were grown on Si（100）substrate by chemical vapor deposition（CVD）.Silicon carbide（Si C）is a wide gap semiconductor *** the high temperature,it still maintains the low intrinsic carrier concentration,high break down electric field,high saturated electron drift velocity,high